초록 ▼

The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container is transported from said source to a substrate by a carrier gas in gaseous form and is deposited on sai

The invention relates to a method and a device for depositing especially, organic layers. In a heated reactor, a non-gaseous starting material that is stored in a source in the form of a container is transported from said source to a substrate by a carrier gas in gaseous form and is deposited on said substrate. The rate of production of the gaseous starting material by the source is unpredictable due to a heat input that cannot be regulated in a reproducible manner and due to cooling resulting from the carrier gas. The invention therefore provides that the preheated carrier gas washes through the starting material from bottom to top, the starting material being kept essentially isothermal in relation to the carrier gas by the heated container walls.

대표청구항 ▼

1. A method for depositing layers of an organic material where a non-gaseous starting material held in stock in a source formed by a vessel is transported in a gaseous state, by means of a carrier gas, to a substrate, the substrate being located in a heated reactor and the gaseous starting material,

1. A method for depositing layers of an organic material where a non-gaseous starting material held in stock in a source formed by a vessel is transported in a gaseous state, by means of a carrier gas, to a substrate, the substrate being located in a heated reactor and the gaseous starting material, on account of a substrate temperature which is lower than the source temperature, condenses on the substrate so as to form a layer, the walls of the vessel being heated by a heater, and the carrier gas flushing through the starting material, which is held in stock in the vessel, from the bottom upward, the temperature of the carrier gas flowing in corresponding to the temperature of the starting material.2. Method according to claim 1, wherein the heat of evaporation is fed to the starting material via the vessel walls and/or via heating rods which project into the starting material.3. Method according to claim 2, wherein the carrier gas is already saturated with the gaseous starting material within the bottom third, preferably bottom fifth, of the receiving chamber.4. Method according to claim 3, wherein the vessel is topped up from the top.5. Method according to claim 4, wherein the carrier gas is fed to the vessel at elevated temperature, so that the heat of sublimation is at least partially removed from the carrier gas.6. A device for carrying out the method according to claim 5, wherein the vessel has an inlet and a gas outlet, and, between gas inlet and gas outlet, a receiving chamber is filled with the starting material, and a heater for substantially isothermal heating of the carrier gas and of the starting material is associated with the vessel walls and the carrier-gas feed lines which open out into the gas inlet.7. Device according to claim 6, wherein the vessel has a gas-permeable partition, which is at a spacing from the gas inlet and on which the starting material, which is in particular in powder or granule form, is located.8. Device according to claim 7, wherein the partition is planar or in the shape of a dome or a cone.9. Device according to claim 8, wherein the carrier gas and the vessel are heated by the same heating means.10. Device according to claim 9, further comprising heating rods which project into the receptacle.11. Device according to claim 10, further comprising a storage chamber disposed above the receiving chamber and connected to the receiving chamber via a passage which is restrictable.12. Device according to claim 11, wherein the partition is heatable and in particular comprises a metal.13. Device according to claim 12, wherein the gas outlet has a filter, in particular in the form of a frit.14. Device according to claim 13, wherein the gas inlet is disposed at the base, and the gas outlet is disposed at the top, or the gas inlet is associated with the cover and the gas outlet is associated with the base.15. Device according to claim 14, further comprising an insert which is filled with the organic material, and is introduced into the vessel and has a gas-permeable insert wall through which the gas flowing through the vessel can flow.16. A method for depositing layers of an organic material on a substrate comprising the steps of:providing a non-gaseous starting material in a source formed by a vessel;positioning the substrate in a heated reactor, the temperature of the substrate being lower than the temperature of the source;providing a carrier gas having a controlled temperature corresponding to the temperature of the starting material;flushing the controlled temperature carrier gas through the starting material from the bottom upward;transitioning the non-gaseous starting material to a gaseous state at least in part with the controlled temperature carrier gas;transporting the starting material in a gaseous state with the controlled temperature carrier gas to the substrate, the temperature of the starting material being higher than the temperature of the substrate; andcondensing the starting material on the substrate to for a layer.