초록 ▼

A hybrid assembly having improved cross talk characteristics includes a substrate having an upper surface. Conductive paths on the upper surface are provided for conducting high frequency signals. Regular polygons made of an electromagnetic band gap (EBG) material having slow wave characteristics ar

A hybrid assembly having improved cross talk characteristics includes a substrate having an upper surface. Conductive paths on the upper surface are provided for conducting high frequency signals. Regular polygons made of an electromagnetic band gap (EBG) material having slow wave characteristics are deposited on the upper surface and form a lattice for tessellating the upper surface. Each of the polygons has a periphery. The polygons are separated along their periphery from adjacent polygons by an interspace and are covered with an insulating material. Second polygons, also made of an electromagnetic band gap material, are deposited over the insulating material. Semiconductor structures are mounted over the second polygons. The semiconductor structures have a plurality of electrical contacts with the conductive paths. The regular polygons can be hexagons, triangles, octagons or any other combination that forms a lattice and can be printed onto the substrate.

대표청구항 ▼

1. A hybrid assembly operating at an operating frequency comprising:a substrate having an upper surface and a lower surface, said lower surface covered by a conductive layer connected to ground potential;conductive paths on said upper surface for conducting high frequency signals along said upper su

1. A hybrid assembly operating at an operating frequency comprising:a substrate having an upper surface and a lower surface, said lower surface covered by a conductive layer connected to ground potential;conductive paths on said upper surface for conducting high frequency signals along said upper surface of said substrate;first polygons made of a first electromagnetic band gap material on said upper surface, said first electromagnetic band gap material having slow wave characteristics in a first band, said first polygons forming a lattice for tessellating said upper surface, each of said first polygons having a first periphery at a first position; each of said first polygons separated along said first periphery from adjacent first polygons by a first interspace; said first polygons separated by a first distance from said conductive paths; each of said first polygons connected to a first conductive via, said first conductive via traversing said substrate and connected to said conductive layer on said lower surface of said substrate.2. A hybrid assembly as in claim 1 wherein said first polygons are hexagons.3. A hybrid assembly as in claim 1 wherein said first polygons are triangles.4. A hybrid assembly as in claim 1 wherein said first polygons are octagons.5. A hybrid assembly as in claim 1 wherein said first periphery of first polygons is inversely proportional to said operating frequency of said hybrid.6. A hybrid assembly as in claim 1 wherein said first interspace along said periphery is inversely proportional to said operating frequency of said hybrid.7. A hybrid assembly as in claim 1, further comprisingan insulating layer positioned over said first polygons;second polygons made of a second electromagnetic band gap material over said insulating layer;said second electromagnetic band gap material having slow wave characteristics in a second band, said second polygons forming a lattice for tessellating said upper surface, each of said second polygons having a second periphery at a second position; each of said second polygons separated along said second periphery from adjacent second polygons by a second interspace; said second polygons separated by a second distance from said conductive paths each of said second polygons connected to a second conductive via, said second conductive via traversing said substrate and connected to said conductive layer on said lower surface of said substrate;semiconductor structures mounted over said second polygons, said semiconductor structures having a plurality of electrical contacts with said conductive paths.8. A hybrid assembly as in claim 7 wherein said second polygons are hexagons.9. A hybrid assembly as in claim 7 wherein said second polygons are triangles.10. A hybrid assembly as in claim 7 wherein said second polygons are octagons.11. A hybrid assembly as in claim 7 wherein said second position is separated from said first position by an amount greater than said first interspace.12. A hybrid assembly as in claim 11 wherein said second interspace is equal to said first interspace.13. A hybrid assembly as in claim 11 wherein said second polygons are the same as said first polygons.14. A hybrid assembly as in claim 11 wherein said second periphery is equal to said first periphery.15. A method for manufacturing a hybrid assembly comprising the steps of:forming conductive paths for conducting high frequency signals along an upper surface of a substrate;depositing first polygons on said upper surface, said first polygons made of a first electromagnetic band gap material, said first electromagnetic material having slow wave characteristics in a first band, said first polygons forming a lattice for tessellating said upper surface; each of said first polygons having a first periphery at a first position; each of said first polygons separated along said first periphery from adjacent first polygons by a first interspace; said first polygons separated by a first distance from said conductive paths; each of said first polygons connected to a first conductive via, said first conductive via traversing said substrate and connected to said conductive layer on said lower surface of said substrate.16. A method for manufacturing a hybrid assembly as described in claim 15 further comprising the step of mounting semiconductor structures above said first polygons, said semiconductor structures having a plurality of electrical contacts with said conductive paths.17. A method for manufacturing a hybrid assembly as described in claim 15 wherein said first polygons are hexagons.18. A method for manufacturing a hybrid assembly as described in claim 15 wherein said first polygons are triangles.19. A method for manufacturing a hybrid assembly as described in claim 15 wherein said first polygons are octagons.20. A method for manufacturing a hybrid assembly as described in claim 15 wherein said first polygons are deposited on said upper surface using a printing procedure to tessellate said upper surface of said substrate with said first polygons.21. A method for manufacturing a hybrid assembly as described in claim 15 further comprising the steps of:depositing an insulating layer over said first polygonsdepositing second polygons over said insulating layer, said second polygons made of a second electromagnetic band gap material;said second electromagnetic band gap layer material having slow wave characteristics in a second band, said second polygons forming a lattice for tessellating said upper surface, each of said second polygons having a second periphery at a second position; each of said second polygons separated along said second periphery from adjacent second polygons by a second interspace; said second polygons separated by a second distance from said conductive paths, each of said second polygons connected to a second conductive via, said second conductive via traversing said substrate and connected to said conductive layer on said lower surface of said substrate;mounting semiconductor structures over said second polygons, said semiconductor structures having a plurality of electrical contacts with said conductive paths.22. A method for manufacturing a hybrid assembly as described in claim 21 wherein said second polygons are hexagons.23. A method for manufacturing a hybrid assembly as described in claim 21 wherein said second polygons are triangles.24. A method for manufacturing a hybrid assembly as described in claim 21 wherein said second polygons are octagons.25. A method for manufacturing a hybrid assembly as described in claim 21 wherein said second polygons are deposited using a printing procedure.26. A method for manufacturing a hybrid assembly as described in claim 21 wherein said first band is the same as said second band.27. A method for manufacturing a hybrid assembly as described in claim 26 wherein said first periphery is the same as said second periphery.28. A method for manufacturing a hybrid assembly as described in claim 27 wherein said first interspace is the same as said second interspace.29. A method for manufacturing a hybrid assembly as described in claim 28 wherein said first interspace, said second interspace, said first periphery, said second periphery, said first electromagnetic band gap material and said second electromagnetic band gap material are chosen to form an attenuator at said operating frequency for unwanted signals traveling between said upper surface of said substrate and said semiconductor structures.