IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0462476
(2003-06-16)
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발명자
/ 주소 |
- Geusic, Joseph E.
- Reinberg, Alan R.
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
2 인용 특허 :
18 |
초록
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A patterning method includes providing a first material (e.g., copper) and transforming at a least a surface region of the first material to a second material (e.g., copper oxide). One or more portions of the second material (e.g., copper oxide) are converted to one or more converted portions of fir
A patterning method includes providing a first material (e.g., copper) and transforming at a least a surface region of the first material to a second material (e.g., copper oxide). One or more portions of the second material (e.g., copper oxide) are converted to one or more converted portions of first material (e.g., copper) while one or more portions of the second material (e.g., copper oxide) remain. One or more portions of the remaining second material (e.g., copper oxide) are removed selectively relative to converted portions of first material (e.g., copper). Further, a thickness of the converted portions may be increased. Yet further, a diffusion barrier layer may be used for certain applications.
대표청구항
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1. A patterning method comprising:forming diffusion barrier material on a substrate;forming a first material on at least a portion of the diffusion barrier material;transforming at least a surface region of the first material to a second material;converting one or more portions of the second materia
1. A patterning method comprising:forming diffusion barrier material on a substrate;forming a first material on at least a portion of the diffusion barrier material;transforming at least a surface region of the first material to a second material;converting one or more portions of the second material to one or more converted portions of first material while at least one or more portions of the second material overlying diffusion barrier material remain;removing one or more of the remaining portions of second material selectively relative to the one or more converted portions of first material exposing diffusion barrier material thereunder;removing the exposed diffusion barrier material selectively relative to the one or more converted portions of first material; andincreasing a thickness of the one or more converted portions of first material, wherein increasing the thickness of the one or more converted portions of first material comprises electroless deposition first of material on the one or more converted portions of first material.2. The method of claim 1, wherein transforming at least the surface region of the first material to the second material comprises oxidizing the first material.3. The method of claim 1, wherein convening one or more portions of the second material to one or more converted portions of first material comprises exposing the one or more portions of second material to radiation.4. The method of claim 1, wherein forming the diffusion barrier material comprises depositing the diffusion barrier material on the substrate by chemical vapor deposition.5. The method of claim 1, wherein forming the diffusion barrier material comprises forming the diffusion barrier material on the substrate by electroless deposition.6. The method of claim 1, further comprising forming an additional diffusion barrier layer over the one or more converted portions of first material having an increased thickness.7. The method of claim 6, wherein forming the additional diffusion barrier layer comprises electroless depositing diffusion barrier material over the one or more converted portions of first material having an increased thickness.8. The method of claim 1, wherein transforming at least the surface region of the first material to the second material comprises transforming at least the surface region of the first material to the second material comprising metal oxide.9. The method of claim 8, wherein forming the first material on the diffusion barrier material comprises forming the first material comprising an elemental metal on the substrate.10. The method of claim 1, wherein forming the diffusion barrier material on the substrate comprises forming the diffusion barrier material comprising cobalt, tungsten, and phosphorous on the substrate, wherein forming the first material on the diffusion barrier material comprises forming the first material comprising copper on the diffusion barrier material, and further wherein transforming at least the surface region of the first material to the second material comprises transforming at least the surface region of the first material comprising copper to the second material comprising copper oxide.11. A conductor patterning method comprising:forming a diffusion barrier material comprising cobalt, tungsten, and phosphorous on a silicon-containing region of a substrate;forming a first material comprising copper on the diffusion barrier material;oxidizing at least a surface region of the first material comprising copper to a second material comprising cooper oxide;converting one or more portions of the second material comprising copper oxide to one or more converted portions of first material comprising copper while leaving at least one or more portions of the second material comprising copper oxide remaining over underlying portions of the diffusion barrier material;removing one or more of the remaining portions of second material comprising cooper oxide selectively relative to the one or more converted portions of first material comprising copper exposing underlying diffusion barrier material;removing the exposed diffusion barrier material; andincreasing a thickness of one or more converted portions of the first material comprising copper, wherein increasing the thickness comprises depositing first material on the one or more converted portions of first material comprising copper by electroless deposition.12. The method of claim 11, wherein converting the one or more portions of the second material comprising copper oxide to the one or more converted portions of the first material comprising copper comprises photoreducing one or more portions of the second material comprising copper oxide to copper.13. The method of claim 11, wherein forming the diffusion barrier material comprises depositing a barrier material comprising cobalt, tungsten, and phosphorous by chemical vapor deposition.14. The method of claim 11, wherein forming the diffusion barrier material comprises depositing the diffusion barrier material comprising cobalt, tungsten, and phosphorous by electroless deposition.15. The method of claim 11, wherein the method further comprises forming additional diffusion barrier material over the one or more converted portions of the first material comprising copper having an increased thickness to provide a baffler completely about the converted portions.16. The method of claim 15, wherein forming the additional diffusion barrier material comprises forming diffusion barrier material comprising cobalt, tungsten, and phosphorous.17. The method of claim 15, wherein forming the additional diffusion barrier material over the one or more converted portions of the first material comprises forming additional diffusion barrier material by selective deposition over the one or more converted portions.18. The method of claim 11, wherein removing one or more of the remaining portions of second material comprising copper oxide selectively relative to the first material comprising copper comprises exposing the one or more remaining portions of second material comprising copper oxide to a gaseous etchant.19. The method of claim 18, wherein removing one or more of the remaining portions of second material comprising copper oxide selectively relative to the first material comprising copper comprises exposing the one or more remaining portions of second material comprising copper oxide to hexafluoroacetylacetone.20. The method of claim 11, wherein removing the exposed diffusion barrier material comprises one of removing the exposed diffusion barrier material by at least one of ion milling or sputter etching.21. A conductor patterning method comprising:forming a diffusion barrier material comprising cobalt, tungsten, and phosphorous on a silicon-containing region of a substrate;forming a first material comprising copper on the diffusion barrier material;oxidizing at least a surface region of the first material comprising copper to a second material comprising copper oxide;converting one or more portions of the second material comprising copper oxide to one or more converted portions of first material comprising copper while leaving at least one or more portions of the second material comprising cooper oxide remaining over underlying portions of the diffusion barrier material;removing one or more of the remaining portions of second material comprising copper oxide selectively relative to the one or more converted portions of first material comprising copper exposing underlying diffusion barrier material;removing the exposed diffusion barrier material;increasing a thickness of one or more converted portions of the first material comprising copper; by depositing the first material comprising copper on the one or more converted portions of the first material comprising copper; andforming additional diffusion barrier material over the one or more converted portions of the first material comprising copper having the increased thickness to provide a barrier completely about the converted portions.22. The method of claim 21, wherein forming the additional diffusion barrier material comprises forming diffusion barrier material comprising cobalt, tungsten, and phosphorous.23. The method of claim 21, wherein forming the additional diffusion barrier material over the one or more converted portions of the first material comprises forming additional diffusion barrier material by selective deposition over the one or more converted portions.24. The method of claim 21, wherein converting the one or more portions of the second material comprising copper oxide to the one or more converted portions of the first material comprising copper comprises photoreducing one or more portions of the second material comprising copper oxide to copper.25. The method of claim 21, wherein forming the diffusion barrier material comprises depositing a barrier material comprising cobalt, tungsten, and phosphorous by chemical vapor deposition.26. The method of claim 21, wherein forming the diffusion barrier material comprises depositing the diffusion barrier material comprising cobalt, tungsten, and phosphorous by electroless deposition.27. The method of claim 21, wherein increasing the thickness comprises electroplating material on the one or more converted portions comprising copper.28. The method of claim 21, wherein increasing the thickness comprises depositing material on the one or more converted portions of first material comprising copper by electroless deposition.29. The method of claim 21, wherein removing one or more of the remaining portions of second material comprising copper oxide selectively relative to the first material comprising copper comprises exposing the one or more remaining portions of second material comprising copper oxide to a gaseous etchant.30. The method of claim 29, wherein removing one or more of the remaining portions of second material comprising copper oxide selectively relative to the first material comprising copper comprises exposing the one or more remaining portions of second material comprising copper oxide to hexafluoroacetylacetone.31. The method of claim 21, wherein removing the exposed diffusion barrier material comprises one of removing the exposed diffusion barrier material by at least one of ion milling or sputter etching.32. The method of claim 21, wherein forming the additional diffusion barrier material over the one or more converted portions of the first material comprises forming additional diffusion barrier material using electroless deposition.33. A conductor patterning method comprising:forming a diffusion barrier material comprising cobalt, tungsten, and phosphorous on a silicon-containing region of a substrate;forming a first material comprising copper on the diffusion barrier material;oxidizing at least a surface region of the first material comprising copper to a second material comprising copper oxide;converting one or more portions of the second material comprising copper oxide to one or more converted portions of first material comprising copper while leaving at least one or more portions of the second material comprising copper oxide remaining over underlying portions of the diffusion barrier material;removing one or more of the remaining portions of second material comprising copper oxide selectively relative to the first material comprising copper exposing underlying diffusion barrier material;removing the exposed diffusion barrier material;increasing a thickness of the one or more converted portions of first material comprising copper by depositing the first material comprising copper on the one or more converted portion of the first material comprising copper; andforming additional diffusion barrier material over the one or more converted portions of the first material comprising copper having the increased thickness to provide a barrier completely about the converted portions, wherein forming the additional diffusion barrier material over the one or more converted portions of the first material comprises forming additional diffusion barrier material using electroless deposition.34. The method of claim 33, wherein forming the additional diffusion barrier material comprises forming diffusion barrier material comprising cobalt, tungsten, and phosphorous.35. The method of claim 33, wherein converting the one or more portions of the second material comprising copper oxide to the one or more converted portions of the first material comprising copper comprises photoreducing one or more portions of the second material comprising copper oxide to copper.36. The method of claim 33, wherein forming the diffusion barrier material comprises depositing a barrier material comprising cobalt, tungsten, and phosphorous by chemical vapor deposition.37. The method of claim 33, wherein forming the diffusion barrier material comprises depositing the diffusion barrier material comprising cobalt, tungsten, and phosphorous using electroless deposition.38. The method of claim 33, wherein removing one or more of the remaining portions of second material comprising copper oxide selectively relative to the first material comprising copper comprises exposing the one or more remaining portions of second material comprising copper oxide to a gaseous etchant.39. The method of claim 38, wherein removing one or more of the remaining portions of second material comprising copper oxide selectively relative to the first material comprising copper comprises exposing the one or more remaining portions of second material comprising copper oxide to hexafluoroacetylacetone.40. The method of claim 33, wherein removing the exposed diffusion barrier material comprises one of removing the exposed diffusion barrier material by at least one of ion milling or sputter etching.41. A patterning method comprising:forming diffusion baffler material on a substrate;forming a first material on at least a portion of the diffusion barrier material;transforming at least a surface region of the first material to a second material;converting one or more portions of the second material to one or more converted portions of first material while at least one or more portions of the second material overlying diffusion barrier material remain;removing one or more of the remaining portions of second material selectively relative to the one or more converted portions of first material exposing diffusion barrier material thereunder;removing the exposed diffusion barrier material selectively relative to the one or more converted portions of first material;increasing a thickness of the one or more converted portions of the first material by depositing the first material on the one or more converted portions of the first material;forming an additional diffusion barrier material over the one or more converted portions of the first material having the increased thickness using electroless deposition.42. The method of claim 41, wherein transforming at least the surface region of the first material to the second material comprises oxidizing the first material.43. The method of claim 41, wherein converting one or more portions of the second material to one or more converted portions of first material comprises exposing the one or more portions of second material to radiation.44. The method of claim 41, wherein forming the diffusion barrier material comprises depositing the diffusion barrier material on the substrate by chemical vapor deposition.45. The method of claim 41, wherein forming the diffusion barrier material comprises forming the diffusion barrier material on the substrate by electroless deposition.46. The method of claim 41, wherein transforming at least the surface region of the first material to the second material comprises transforming at least the surface region of the first material to the second material comprising metal oxide.47. The method of claim 46, wherein forming the first material on the diffusion barrier material comprises forming the first material comprising an elemental metal on the substrate.48. The method of claim 41, wherein forming the diffusion barrier material on the substrate comprises forming the diffusion barrier material comprising cobalt, tungsten, and phosphorous on the substrate, wherein forming the first material on the diffusion barrier material comprises forming the first material comprising copper on the diffusion barrier material, and further wherein transforming at least the surface region of the first material to the second material comprises transforming at least the surface region of the first material comprising copper to the second material comprising copper oxide.
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