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An apparatus for measuring at least one electrical property of a semiconductor wafer includes a probe including a shaft having at a distal end thereof a conductive tip for electrically communicating with an object area of the semiconductor wafer. The apparatus further includes a device for applying

An apparatus for measuring at least one electrical property of a semiconductor wafer includes a probe including a shaft having at a distal end thereof a conductive tip for electrically communicating with an object area of the semiconductor wafer. The apparatus further includes a device for applying an electrical stimulus between the conductive tip and the object area, and a device for measuring a response of the semiconductor wafer to the electrical stimulus and for determining from the response the at least one electrical property of the object area of the semiconductor wafer. A probe guard is included that surrounds the shaft of the probe adjacent the distal end of the probe. The probe guard avoids electrical communication between the probe and areas outside of the object area of the semiconductor wafer.

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1. An apparatus for measuring an electrical property of a semiconductor wafer, the apparatus comprising:a probe having an electrically conductive tip;a probe guard disposed adjacent the electrically conductive tip;means for applying, when the electrically conductive tip contacts a surface of a semic

1. An apparatus for measuring an electrical property of a semiconductor wafer, the apparatus comprising:a probe having an electrically conductive tip;a probe guard disposed adjacent the electrically conductive tip;means for applying, when the electrically conductive tip contacts a surface of a semiconductor wafer, (i) a first electrical stimulus between the conductive tip and a semiconductor wafer that causes at least one of majority and minority carriers to accumulate in an object area of the semiconductor wafer and (ii) a second electrical stimulus between the probe guard and the semiconductor wafer that causes majority carriers to accumulate adjacent the object area; andmeans for measuring a response of the semiconductor wafer to the electrical stimuli and for determining from the response at least one electrical property of the semiconductor wafer.2. The apparatus as set forth in claim 1, wherein the first electrical stimulus is one of a capacitance-voltage (CV) type stimulus, a conductance-voltage (GV) type stimulus and a capacitance-time (Ct) type stimulus.3. The apparatus as set forth in claim 1, wherein the second electrical stimulus is a DC voltage.4. The apparatus as set forth in claim 1, wherein:the probe includes a shaft having the electrically conductive tip at one end thereof; andthe probe guard includes a electrical insulator surrounding the shaft of the probe at least adjacent the electrically conductive tip and an electrical conductor surrounding the electrical insulator at least adjacent the electrically conductive tip.5. The apparatus as set forth in claim 4, wherein the second electrical stimulus is applied between the electrical conductor and the semiconductor wafer.6. The apparatus as set forth in claim 1, wherein:the semiconductor wafer includes a dielectric layer overlaying a semiconductor material; andthe surface of the semiconductor wafer is an exposed surface of the dielectric layer.7. The apparatus as set forth in claim 6, wherein:the object area is an area of the semiconductor material adjacent the contact between the electrically conductive tip and the surface of the semiconductor wafer; andthe second electrical stimulus causes majority carriers to accumulate in the semiconductor material surrounding the object area.8. The apparatus as set forth in claim 1, wherein the conductive tip is formed from an elastically deformable material.9. A method of measuring an electrical property of a semiconductor wafer comprising the steps of:(a) providing a probe having an electrically conductive tip and a probe guard disposed adjacent the electrically conductive tip;(b) forming a contact between the electrically conductive tip and a surface of a semiconductor wafer;(c) applying a first electrical stimulus between the conductive tip and the semiconductor wafer that causes at least one of majority carriers and minority carriers to accumulate in an object area of the semiconductor wafer;(d) applying a second electrical stimulus between the probe guard and the semiconductor wafer that causes majority carriers to accumulate adjacent the object area; and(e) measuring a response of the semiconductor wafer to the electrical stimuli and determining therefrom at least one electrical property of the semiconductor wafer.10. The method as set forth in claim 9, wherein the first electrical stimulus is one of a capacitance-voltage (CV) type stimulus, a conductance-voltage (GV) type stimulus and a capacitance-time (Ct) type stimulus.11. The method as set forth in claim 9, wherein the second electrical stimulus is a DC voltage.12. The method as set forth in claim 9, wherein:the probe includes a shaft having the electrically conductive tip at one end thereof; andthe probe guard includes a electrical insulator surrounding the shaft of the probe at least adjacent the electrically conductive tip and an electrical conductor surrounding the electrical insulator at least adjacent the electrically conductive tip.13. The method as set forth in claim 11, wherein the second electrical stimulus is applied between the electrical conductor and the semiconductor wafer.14. The method as set forth in claim 9, wherein:the semiconductor wafer includes a dielectric layer overlaying a semiconductor material; andthe surface of the semiconductor wafer is an exposed surface of the dielectric layer.15. The method as set forth in claim 14, wherein:the object area is an area of the semiconductor material adjacent the contact between theelectrically conductive tip and the surface of the semiconductor wafer; andthe second electrical stimulus causes majority carriers to accumulate in the semiconductor material surrounding the object area.16. The method as set forth in claim 9, wherein the conductive tip is formed from an elastically deformable material.