Projection exposure apparatus and aberration measurement method
원문보기
IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0282128
(2002-10-29)
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우선권정보 |
JP-0338334 (2001-11-02) |
발명자
/ 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
Fitzpatrick, Cella, Harper &
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인용정보 |
피인용 횟수 :
3 인용 특허 :
7 |
초록
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A projection exposure apparatus includes a projection optical system for projecting a pattern on a substrate, a holding portion for holding an optical element which propagates light toward the projection optical system, a mask which is arranged on or near a plane of an image of the optical element f
A projection exposure apparatus includes a projection optical system for projecting a pattern on a substrate, a holding portion for holding an optical element which propagates light toward the projection optical system, a mask which is arranged on or near a plane of an image of the optical element formed by the projection optical system and has a transmission portion, an actuator for driving the optical element along one of focal planes of the projection optical system, and a measurement device for measuring an intensity of light which emerges from the optical element, and passes through the projection optical system and the transmission portion of the mask, while the optical element is driven. The measurement device is disposed at a point in a plane conjugate to a pupil plane of the projection optical system or a point in a plane spaced apart from the mask enough to separately detect respective rays emerging from plural points of the plane.
대표청구항
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1. A projection exposure apparatus comprising:a projection optical system for projecting a pattern on a substrate;a first mask which is arranged on or near an object plane of said projection optical system;a second mask which is arranged on or near an image plane of said projection optical system an
1. A projection exposure apparatus comprising:a projection optical system for projecting a pattern on a substrate;a first mask which is arranged on or near an object plane of said projection optical system;a second mask which is arranged on or near an image plane of said projection optical system and comprises a single aperture;an actuator which drives said first mask or said second mask in a direction perpendicular to an optical axis of said projection optical system; anda measurement device for measuring an intensity distribution of light which emerges from said first mask, and passes through said projection optical system and the single aperture of said second mask while said first mask or said second mask is driven, wherein said measurement device is disposed at a point in a plane conjugate to a pupil plane of said projection optical system or a point in a plane apart from said second mask enough to separately detect respective rays emerging from plural points of the pupil plane.2. The apparatus according to claim 1, further comprising an arithmetic device for calculating aberration of said projection optical system on the basis of a measurement result of said measurement device.3. The apparatus according to claim 1, further comprising an arithmetic device for calculating ray aberration of said projection optical system on the basis of a measurement result of said measurement device.4. The apparatus according to claim 1, further comprising an arithmetic device for calculating wavefront aberration of said projection optical system on the basis of a measurement result of said measurement device.5. The apparatus according to claim 1, wherein said first mask has a transmission portion, said first mask is illuminated by an illumination system and light emerges from the transmission portion toward said projection optical system.6. The apparatus according to claim 1, wherein said first mask has a reflecting portion, said first mask is illuminated by an illumination system and light emerges from the reflecting portion toward said projection optical system.7. The apparatus according to claim 1, wherein a region of said first mask, from which light emerges, is smaller than an isoplanatic region of said projection optical system.8. The apparatus according to claim 1, wherein light which emerges from said projection optical system sufficiently covers a pupil of said projection optical system.9. A method of measuring aberration of a projection optical system in a projection exposure apparatus for projecting a pattern on a substrate via the projection optical system, the projection exposure apparatus having:(i) a projection optical system for projecting a pattern on a substrate,(ii) a first mask which is arranged on or near an object plane of the projection optical system, and(iii) a second mask which is arranged near an image plane of the projection optical system and comprises a single aperture,the method comprising:the measurement step of measuring an intensity distribution of light which emerges from the first mask, and passes through the projection optical system and the single aperture of the second mask by a measurement device disposed at a point in a plane conjugate to a pupil plane of the projection optical system or a point in a plane apart from the second mask enough to separately detect respective rays emerging from plural points of the pupil plane, while the first mask or the second mask is driven along one of focal planes of the projection optical system; andthe arithmetic step of calculating aberration of the projection optical system on the basis of a measurement result obtained in the measurement step.10. A method of transferring a pattern to a substrate by using a projection exposure apparatus, the projection exposure apparatus having:(i) a projection optical system for projecting a pattern on a substrate,(ii) a first mask which is arranged on or near an object plane of the projection optical system, and(iii) a second mask which is arranged near an image plane of the projection optical system and comprises a single aperture,the method comprising:the measurement step of measuring an intensity distribution of light which emerges from the first mask, and passes through the projection optical system and the single aperture of the second mask by a measurement device disposed at a point in a plane conjugate to a pupil plane of the projection optical system or a point in a plane apart from the second mask enough to separately detect respective rays emerging from plural points of the pupil plane while the first mask or the second mask is driven along one of focal planes of the projection optical system; andthe arithmetic step of calculating aberration of the projection optical system on the basis of a measurement result obtained in the measurement step.11. A method of manufacturing a device by using a projection exposure apparatus, the projection exposure apparatus having:(i) a projection optical system for projecting a pattern on a substrate,(ii) a first mask which is arranged on or near an object plane of the projection optical system, and(iii) a second mask which is arranged near an image plane of the projection optical system and comprises a single aperture,the method comprising:the measurement step of measuring an intensity distribution of light which emerges from the first mask, and passes through the projection optical system and the single aperture of the second mask by a measurement device disposed at a point in a plane conjugate to a pupil plane of the projection optical system or a point in a plane apart from the second mask enough to separately detect respective rays emerging from plural points of the pupil plane while the first mask or the second mask is driven along one of focal planes of the projection optical system;the arithmetic step of calculating aberration of the projection optical system on the basis of a measurement result obtained in the measurement step;the adjustment step of adjusting the projection optical system on the basis of the aberration obtained in the arithmetic step;the transfer step of transferring a pattern to a photosensitive member of the substrate coated with a photosensitive material by using the projection exposure apparatus in which the projection optical system is adjusted; andthe developing step of developing the photosensitive member bearing the pattern.
이 특허에 인용된 특허 (7)
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Sato Ryuichi,JPX, Exposure and method which tests optical characteristics of optical elements in a projection lens system prior to exposu.
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Nishi Kenji,JPX, Exposure apparatus.
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Kenji Nishi JP; Toru Kiuchi JP, Exposure apparatus, exposure method using the same and method of manufacture of circuit device.
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Fukuda Hiroshi,JPX ; Shirai Seiichiro,JPX ; Terasawa Tsuneo,JPX ; Hayano Katsuya,JPX ; Hasegawa Norio,JPX, Method for measuring aberration of projection lens, method for forming patterns, mask, and method for correcting a projection lens.
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Kousuke Suzuki JP; Masayuki Murayama JP, Method for measuring optical feature of exposure apparatus and exposure apparatus having means for measuring optical feature.
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Taniguchi Tetsuo,JPX, Projection exposure apparatus.
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Ebbesen Thomas W. ; Ghaemi Hadi F. ; Thio Tineke ; Wolff Peter A., Sub-wavelength aperture arrays with enhanced light transmission.
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Smith, Daniel Gene, Autofocus system with error compensation.
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Lipson,Matthew; Latypov,Azat M., Lithographic apparatus and device manufacturing method utilizing placement of a patterning device at a pupil plane.
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Ouchi, Chidane; Nakauchi, Akihiro; Kato, Seima, Measuring apparatus, exposure apparatus and method, and device manufacturing method.
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