초록 ▼

The present invention provides a method and apparatus for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separation layer is formed inside a donor wafer by trapping hydrogen i

The present invention provides a method and apparatus for lift-off of a thin layer from a crystalline substrate, preferably the layer from a silicon wafer to further form a silicon-on-insulator (SOI) sandwich structure, wherein a separation layer is formed inside a donor wafer by trapping hydrogen into a preformed, buried defect-rich layer preferably obtained by implanting a low dose of light ions through a protective layer deeply into this donor wafer. The donor wafer is then bonded to a second wafer and then split at the separation layer using a splicing apparatus. The invention also provides a “Wide Area Ion Source” (WAIS) that performs both implants in a very cost effective manner.

대표청구항 ▼

1. A method of forming a semiconductor wafer comprising:a. depositing a first charged ion made from a light element selected from the group consisting of H, D, He, Li, B, Ne, and Si under the surface of a first substrate wherein the first substrate is covered with a protective layer thinner than the

1. A method of forming a semiconductor wafer comprising:a. depositing a first charged ion made from a light element selected from the group consisting of H, D, He, Li, B, Ne, and Si under the surface of a first substrate wherein the first substrate is covered with a protective layer thinner than the average penetration depth of the ions, and wherein a source of the first charged ion is kept at an electrical potential with respect to the first substrate between 20 kV and 500 kV, and wherein the first charged ion is deposited into the substrate at a dosage between 1013 ions/cm2 and 1018 ions/cm2, and wherein the temperature of the first substrate is kept between ?173° C. and 527° C.;b. implanting a second ion in the protective layer wherein the potential of a source of the second ion with respect to the substrate is lower than during the depositing step and wherein the temperature of the first substrate is kept between 27° C. and 527° C.;c. reducing the thickness of the protective layer;d. bonding the first substrate to a second substrate to form a composite structure;e. conducting a first annealing of the composite structure at a temperature between 127° C. and 327° C.;f. conducting a second annealing of the composite structure at a temperature between 427° C. and 527° C.;g. adding energy to the composite structure to separate the first and second substrates wherein the surface of the first substrate above the first charged ions remains attached to the second substrate after the separation of the first and second substrates to form a semiconductor wafer; and,h. finishing the surface of the semiconductor wafer.2. The method of claim 1, wherein the finishing step comprises:a. annealing the semiconductor wafer at a temperature between 727° C. and 1127° C.;b. smoothing a surface of the semiconductor wafer by chemical mechanical polishing; and,c. cleaning the surface of the semiconductor wafer in an aqueous solution.3. The method of claim 1, wherein the source of the first charged ion is kept at an electrical potential with respect to the first substrate between 50 kV and 200 kV.4. The method of claim 1, wherein the first charged ion is deposited into the substrate at a dosage of about 1015 ions/cm2.5. The method of claim 1, wherein the temperature of the first substrate during the implanting step is between 227° C. and 327° C.6. The method of claim 1, wherein the second ion is a hydrogen or deuterium ion.7. The method of claim 1, wherein the protective layer is removed from the first substrate during the reducing step.8. The method of claim 1, wherein the energy added to the composite structure in the adding step is selected from the group consisting of thermal stress, mechanical stress, sound waves, and infra-red radiation.9. The process of claim 1, wherein the implanting step is conducted before the depositing step.10. The process of claim 1, wherein said first charged ion is made from an element that is the same as elements comprising the semiconductor.11. The process of claim 1, wherein the protective layer is selected from the group consisting of SiO2, Photo-Resist, metallic film or a combination thereof.