초록 ▼

A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the sil

A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N2O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700째 C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

대표청구항 ▼

What is claimed is: 1. A manufacture system for a semiconductor device comprising: a reaction chamber of a double-tube structure having an outer tube capable of being evacuated and an inner tube of a semi-open structure so that the inner tube communicates with the outer tube; a first gas introducin

What is claimed is: 1. A manufacture system for a semiconductor device comprising: a reaction chamber of a double-tube structure having an outer tube capable of being evacuated and an inner tube of a semi-open structure so that the inner tube communicates with the outer tube; a first gas introducing path communicating with an internal space of said reaction chamber; a second gas introducing path communicating with the internal space of said reaction chamber at a position different from said first gas introducing path; said first and second gas introducing paths being spirals disposed around the inner tube in an intermediate space between the outer and inner tubes of the double-tube structure; and a gas flow check valve provided to each of said first and second gas introducing paths. 2. A manufacture system according to claim 1, further comprising a heater disposed outside of the double-tube structure. 3. A manufacture system according to claim 1, wherein said first gas introducing path comprises: an external combustion tube disposed outside of the double-tube structure; a first subsidiary pipe connected to the external combustion tube and being capable of flowing therethrough N2 and O2 ; and a second subsidiary pipe connected to the external combustion tube and being capable of flowing therethrough N2 and H2 . 4. A manufacture system according to claim 3, wherein said second gas introducing path has a gas pipe for selectively flowing therethrough either a gas containing NO or N2O, or an inert gas. 5. A manufacture system according to claim 4, wherein said first and second gas introducing paths comprise alternately and spirally disposed pipes. 6. A manufacture system according to claim 1, wherein said first and second gas introducing paths comprise alternately and spirally disposed pipes.