초록 ▼

An bonding pad structure has a passivation layer over a copper layer having a pad window to expose a portion of the copper layer, a barrier layer conformal to a profile of the pad window, and an aluminum pad located in the pad window. The metal layer can be an aluminum, aluminum alloy or aluminum do

An bonding pad structure has a passivation layer over a copper layer having a pad window to expose a portion of the copper layer, a barrier layer conformal to a profile of the pad window, and an aluminum pad located in the pad window. The metal layer can be an aluminum, aluminum alloy or aluminum dominated layer for providing a better adhesion property between the copper layer and the bonding wire.

대표청구항 ▼

What is claimed is: 1. A method for manufacturing a semiconductor device, comprising steps of: providing a substrate with a copper pad over the substrate; forming a passivation layer over the copper pad; forming a pad window within the passivation layer to expose a portion of the copper pad; formi

What is claimed is: 1. A method for manufacturing a semiconductor device, comprising steps of: providing a substrate with a copper pad over the substrate; forming a passivation layer over the copper pad; forming a pad window within the passivation layer to expose a portion of the copper pad; forming a barrier layer over the passivation layer and the pad window; removing a portion of the barrier layer over the passivation layer after forming the barrier layer; forming a metal layer on the passivation layer and filled in the pad window after removing the portion of the barrier layer; removing the metal layer above the passivation layer; and forming a bonding wire on the metal layer. 2. The method of claim 1, wherein the metal layer comprises an aluminum, aluminum alloy or aluminum dominated layer. 3. The method of claim 1, wherein the metal layer above the passivation layer is removed by a chemical mechanical polishing (CMP) process. 4. The method of claim 1, wherein the metal layer above the passivation layer is removed by an etching back process. 5. The method of claim 1, wherein the barrier layer is selected from the group consisting of aluminum (Al), tantalum (Ta), tantalum nitride (TaN), titanium nitride (TiN), and tungsten nitride (WN), mixtures thereof, combinations thereof and alloys thereof. 6. The method of claim 1, wherein the passivation layer comprises a doped oxide, an undoped oxide, nitride or combinations thereof. 7. The method of claim 1, wherein the portion of the barrier layer is removed by a chemical mechanical polishing (CMP) process. 8. The method of claim 7, wherein the passivation layer comprises a doped oxide, an undoped oxide, nitride or combinations thereof. 9. A method for manufacturing a bonding pad structure, comprising steps of: providing a substrate with a copper layer over the substrate; forming a passivation layer over the copper layer; forming a pad window within the passivation layer to expose a portion of the copper layer; forming a barrier layer over the passivation layer and the pad window; removing a portion of the barrier layer over the passivation layer after forming the barrier layer; forming a metal layer over the passivation layer and filled in the pad window after removing the portion of the barrier layer; and performing a planarization process to remove the metal layer above the passivation layer. 10. A method for manufacturing a semiconductor device, comprising steps of: providing a substrate with a copper pad over the substrate; forming a passivation layer over the copper pad; forming a pad window within the passivation layer to expose a portion of the copper pad; forming a barrier layer over the passivation layer and the pad window; forming a metal layer over the barrier layer and filled in the pad window; forming a photoresist layer over the metal layer, wherein the photoresist layer has a pattern covering the pad window; removing a portion of the metal layer and the barrier layer to expose the passivation layer; removing the photoresist layer; and forming a bending wire on the metal layer. 11. The method of claim 10, wherein the metal layer comprises an aluminum, aluminum alloy or aluminum dominated layer. 12. The method of claim 10, wherein the portion of the metal layer and the underlying barrier layer are removed by an etching process. 13. The method of claim 10, wherein the barrier layer is selected from the group consisting of aluminum (Al), tantalum (Ta), tantalum nitride (TaN), titanium nitride (TiN), and tungsten nitride (WN), mixtures thereof; combinations thereof and alloys thereof. 14. The method of claim 10, wherein the passivation layer comprises a doped oxide, an undoped oxide, nitride or combinations thereof.