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A thin film transfer join process in which a multilevel thin film structure is formed on a carrier, the multilevel thin film structure is joined to a final substrate and then the carrier is removed. Once the carrier is removed, the dielectric material and metallic material that were once joined to

A thin film transfer join process in which a multilevel thin film structure is formed on a carrier, the multilevel thin film structure is joined to a final substrate and then the carrier is removed. Once the carrier is removed, the dielectric material and metallic material that were once joined to the carrier are now exposed. The dielectric material is then etched back so that the exposed metallic material protrudes beyond the dielectric material. Also disclosed is a module made by the foregoing process.

대표청구항 ▼

What is claimed is: 1. A thin film transfer join process comprising the steps of: providing a carrier for constructing a multilevel thin film structure; forming on the carrier a multilevel thin film structure comprising a dielectric material in contact with the carrier and a metallic material, at l

What is claimed is: 1. A thin film transfer join process comprising the steps of: providing a carrier for constructing a multilevel thin film structure; forming on the carrier a multilevel thin film structure comprising a dielectric material in contact with the carrier and a metallic material, at least a portion of the metallic material being exposed through the dielectric material and in contact with the carrier, the multilevel thin film structure having a joining surface opposite the carrier; providing a substrate; joining the joining surface to the substrate; removing the carrier, etching back the dielectric material that was in contact with the carrier so that the exposed metallic material protrudes beyond the dielectric material. 2. The process of claim 1 further comprising the step of depositing gold on the exposed metallic material. 3. The process of claim 1 further comprising the steps of: depositing a second metallic material on the exposed metallic material; and depositing gold on the second metallic material. 4. The process of claim 1 further comprising the step prior to joining of forming a spacer material on the joining surface wherein the spacer material is joined to the substrate. 5. The process of claim 4 wherein the spacer material comprises an adhesive material. 6. The process of claim 5 wherein the adhesive material is a thermoplastic polyimide. 7. The process of claim 4 wherein the step of forming a spacer material comprises spin applying an adhesive material. 8. The process of claim 7 wherein the adhesive material is a thermoplastic polyimide. 9. The process of claim 1 wherein the joining surface comprises a plurality of anchor pads around a periphery of the joining surface. 10. The process of claim 9 wherein the anchor pads provide no electrical function. 11. The process of claim 1 further comprising the step prior to joining of sectioning the multilevel thin film structure and carrier into a plurality of smaller multilevel thin film structures attached to smaller carriers. 12. The process of claim 1 wherein the step of forming a multilevel thin film structure comprises the steps of: depositing a layer of dielectric material; forming at least one opening in the layer of dielectric material so that a portion of the carrier is exposed; depositing a release layer on the layer of dielectric material into the at least one opening and on the exposed portion of the carrier, the release layer allowing the multilevel thin film structure to be separated from the carrier; and filling the at least one opening with a metallic material.