초록 ▼

The invention relates to a method for producing granular silicon by thermal decomposition of a gas containing silicon in a fluidized bed, said decomposition occurring in the presence of free-flowing mobile elements. Preferably, said free-flowing mobile elements become devoid of silicon in a separate

The invention relates to a method for producing granular silicon by thermal decomposition of a gas containing silicon in a fluidized bed, said decomposition occurring in the presence of free-flowing mobile elements. Preferably, said free-flowing mobile elements become devoid of silicon in a separate procedural step, said silicon being deposited during decomposition of gas containing silicon, by reacting with hydrogen halides, halogens, alkyl halogenides, aryl halogenides or combinations of halogen and/or hydrogen halide and/or oxidized mineral acids and/or by thermal treatment of said elements.

대표청구항 ▼

The invention claimed is: 1. A method for producing granular silicon by thermal decomposition of a gas containing silicon in a fluidized bed, wherein the said decomposition occurs in the presence of free-flowing, mobile elements, wherein silicon being deposited on such free-flowing mobile elements

The invention claimed is: 1. A method for producing granular silicon by thermal decomposition of a gas containing silicon in a fluidized bed, wherein the said decomposition occurs in the presence of free-flowing, mobile elements, wherein silicon being deposited on such free-flowing mobile elements during decomposition of gas containing silicon is removed in a separate procedural step by reacting such silicon with at least one of hydrogen halides, halogens, alkyl halogenides, aryl halogenides and oxidizing mineral acids. 2. A method according to claim 1, wherein the fluidized bed consists of silicon particles with a diameter between 50 and 5000 μm, through which the introduced gas containing silicon streams in a way such that the silicon particles are fluidized and a fluidized bed develops. 3. A method according to claim 1, wherein the gas containing silicon used is a silane. 4. A method according to claim 1, wherein the gas containing silicon used is SiH4 and that the reaction is carried out at temperatures from 500 to 1400째 C. 5. A method according to claim 1, wherein the streaming velocity of the introduced gas containing silicon adopts values from 1 to 10 in relation to the loosening velocity. 6. A method according to claim 1, wherein the free-flowing mobile elements have a density between 1.0 g쨌cm-3 and 5.0 g쨌cm-3. 7. A method according to claim 1, wherein the free-flowing mobile elements have a diameter that is at least one order of magnitude higher than the average diameter of the particles contained in the fluidized bed. 8. A method according to claim 1, wherein the free-flowing mobile elements have at least one of a spherical, ellipsoid, cylindrical, diskoid, symmetrical, asymmetrical and irregular exterior form. 9. A method according to claim 1, wherein the free-flowing mobile elements have at least one of a massive, porous and hollow interior. 10. A method according to claim 1, wherein the materials used for the free-flowing mobile elements are at least one of silicon, metallic materials, non metallic materials, ceramic materials and composite materials. 11. A method for granular producing silicon by thermal decomposition of a gas containing silicon in a fluidized bed, wherein the said decomposition occurs in the presence of free-flowing, mobile elements, wherein silicon being deposited on such free-flowing mobile elements during decomposition of gas containing silicon is removed in a separate procedural step by at least one of heating and cooling of such free-flowing mobile elements. 12. A method according to claim 11, wherein the fluidized bed consists of silicon particles with a diameter between 50 and 5000 μm, through which the introduced gas containing silicon streams in a way such that the silicon particles are fluidized and a fluidized bed develops. 13. A method according to claim 11, wherein the gas containing silicon used is a silane. 14. A method according to claim 11, wherein the gas containing silicon used is SiH4 and that the reaction is carried out at temperatures from 500 to 1400째 C. 15. A method according to claim 11, wherein the streaming velocity of the introduced gas containing silicon adopts values from 1 to 10 in relation to the loosening velocity. 16. A method according to claim 11, wherein the free-flowing mobile elements have a density between 1.0 g쨌cm-3 and 5.0 g쨌cm-3. 17. A method according to claim 11, wherein the free-flowing mobile elements have a diameter that is at least one order of magnitude higher than the average diameter of the particles contained in the fluidized bed. 18. A method according to claim 11, wherein the free-flowing mobile elements have at least one of a spherical, ellipsoid, cylindrical, diskoid, symmetrical, asymmetrical and irregular exterior form. 19. A method according to claim 11, wherein the free-flowing mobile elements have at least one of a massive, porous and hollow interior. 20. A method according to claim 11, wherein the materials used for the free-flowing mobile elements are at least one of silicon, metallic materials, non metallic materials, ceramic materials and composite materials. 21. A method for producing one of photovoltaic and electronic components, the method comprising the steps of: producing granular silicon by thermal decomposition of a gas containing silicon in a fluidized bed, with the decomposition taking place in the presence of free flowing mobile elements; removing silicon deposited on the free-flowing mobile elements during decomposition of the gas containing silicon by at least one of heating the free-flowing mobile elements, cooling the free-flowing mobile elements, and reacting the silicon with at least one of hydrogen halides, halogens, alkyl halogenides, aryl halogenides and oxidizing mineral acids; manufacturing the one of photovoltaic and electronic components from the produced silicon.