초록 ▼

To remove and/or prevent contamination of a probe, at least a portion of the probe is positioned in a chamber having an inlet passage and an outlet passage, with a distal end of the probe extending through the outlet passage and terminating on a side thereof opposite the chamber. A gas is caused to

To remove and/or prevent contamination of a probe, at least a portion of the probe is positioned in a chamber having an inlet passage and an outlet passage, with a distal end of the probe extending through the outlet passage and terminating on a side thereof opposite the chamber. A gas is caused to flow through the inlet passage into the chamber and out the outlet passage, thereby modifying an environment surrounding the distal end of the probe. The gas may be heated prior to injection.

대표청구항 ▼

The invention claimed is: 1. A method of removing and/or preventing contamination of a surface of a semiconductor wafer or sample probe, comprising: (a) positioning at least a portion of the semiconductor wafer or sample probe in a chamber having an inlet passage and an outlet passage, with a dista

The invention claimed is: 1. A method of removing and/or preventing contamination of a surface of a semiconductor wafer or sample probe, comprising: (a) positioning at least a portion of the semiconductor wafer or sample probe in a chamber having an inlet passage and an outlet passage, with a distal end of the semiconductor wafer or sample probe extending through the outlet passage and terminating outside the chamber; and (b) causing a gas to flow through the inlet passage into the chamber and out of the outlet passage, thereby modifying an environment surrounding the distal end of the semiconductor wafer or sample probe, wherein the gas flowing out of the outlet passage flows by an exterior surface of the semiconductor wafer or sample probe. 2. The method of claim 1, wherein the modifying of step (b) includes at least one of: (i) reducing the relative humidity in the environment; (ii) removing at least one contaminant from the environment; (iii) evaporating water in the environment; and (iv) evaporating contaminated vapor in the environment. 3. The method of claim 2, wherein the at least one contaminant is a contaminated vapor. 4. The method of claim 1, wherein the flow of gas is one of laminar flow and turbulent flow. 5. The method of claim 1, wherein the gas is heated to a predetermined temperature. 6. The method of claim 5, wherein the temperature is variable. 7. The method of claim 1, wherein the gas is an inert gas. 8. The method of claim 1, further comprising the step of controlling the flow of gas through at least one of the inlet passage, the chamber and the outlet passage. 9. A method of removing and preventing contamination of a surface of a semiconductor wafer or sample probe, comprising: (a) positioning at least a portion of the semiconductor wafer or sample probe in a chamber having an inlet passage and an outlet passage, with a distal end of the semiconductor wafer or sample probe extending through the outlet passage and terminating outside the chamber; (b) heating a gas; and (c) causing the heated gas to flow through the inlet passage into the chamber and out the outlet passage whereupon the heated gas contacts an exterior surface of the semiconductor wafer or sample probe in the outlet passage and the distal end of the semiconductor wafer or sample probe. 10. The method of claim 9, wherein step (c) further comprises at least one of: (i) reducing the relative humidity in the environment; (ii) removing at least one contaminant from the environment; (iii) evaporating water in the environment; and (iv) evaporating contaminated vapor in the environment. 11. The method of claim 10, wherein the at least one contaminant is a contaminated vapor. 12. The method of claim 9, wherein the flow of gas is one of laminar flow and turbulent flow. 13. The method of claim 9, wherein the gas is heated to a predetermined temperature. 14. The method of claim 9, wherein the temperature of the heated gas is variable. 15. The method of claim 9, wherein the gas is an inert gas. 16. The method of claim 9, further comprising controlling at least one of the flow of gas and the gas heating. 17. A system for removing and preventing contamination of a surface of a semiconductor wafer or sample probe extending through an insulator and attached to a probe arm, the system comprising: a shroud, including (i) a body defining a wall, wherein the wall, the insulator and the probe arm define a chamber through which the semiconductor wafer or sample probe extends, (ii) an inlet passage extending through the wall and in fluid communication with the chamber, and (iii) an outlet passage extending through a base of the body and in fluid communication with the chamber; and a gas source in fluid communication with the inlet passage of the body and configured to cause a gas to flow through the inlet passage into the chamber and out the outlet passage via an exterior surface of the semiconductor wafer or sample probe which extends through the outlet passage and terminates outside the chamber. 18. The system of claim 17, wherein the gas source is at least one of a liquid gas vessel, a gas vessel and a gas generator. 19. The system of claim 17, further comprising means for connecting the gas source and the inlet passage. 20. The system of claim 19, wherein the means for connecting is at least one of a fitting, a hose, a nozzle and a gas injection fitting. 21. The system of claim 17, further comprising a heating device configured to heat the gas to a predetermined temperature prior to the gas following into the chamber. 22. The system of claim 17, further comprising a gas control device in communication with the gas source and configured to control at least one of the flow and the pressure of the gas to the chamber. 23. The system of claim 22, wherein the gas control device is at least one of a pneumatic control device, a digital control device, an analog control device, an automated control device and a manual control device. 24. The system of claim 17, further including a flow control device in fluid communication with the inlet passage and configured to provide controlled, directional flow of the gas to the chamber. 25. The system of claim 17, wherein the gas is an inert gas. 26. The system of claim 17, wherein the shroud is removably coupled to the probe arm. 27. The system of claim 17, wherein a distal end of the semiconductor wafer or sample probe extends through the outlet passage and terminates on a side thereof opposite the chamber. 28. A shroud for removing and preventing contamination of a surface of a semiconductor wafer or sample probe, the shroud comprising: a body defining a wall and a base; an inlet passage extending through the body and debouching through the wall; and an outlet passage extending through the base, wherein, in use of the shroud, the wall defines a wall of a chamber in which at least part of the semiconductor wafer or sample probe is positioned with the distal end of the semiconductor wafer or sample probe extending through the outlet passage and terminating outside the chamber. 29. The shroud of claim 28, further comprising an orifice extending through the body and configured to accept a fastener for removably attaching the shroud to a probe arm.