초록 ▼

An apparatus is directed to increasing the resolution of digital color imaging that includes a photosensing semiconductor structure. The apparatus provides a monocrystalline silicon substrate, a first buffer layer epitaxially formed and overlying the monocrystalline silicon substrate, and a first ph

An apparatus is directed to increasing the resolution of digital color imaging that includes a photosensing semiconductor structure. The apparatus provides a monocrystalline silicon substrate, a first buffer layer epitaxially formed and overlying the monocrystalline silicon substrate, and a first photodiode layer overlying the first buffer layer and operable to provide a first signal indicative of a color associated with a first wavelength of light. The apparatus may further provide a second buffer layer overlying the first photodiode layer and a second photodiode layer overlying the second buffer layer operable to provide a second signal indicative of a color associated with a second wavelength of light. The first buffer layer may include a first monocrystalline oxide layer epitaxially formed to the monocrystalline silicon substrate, a monocrystalline compound semiconductor material overlying the monocrystalline oxide layer, and a second monocrystalline oxide layer overlying the monocrystalline compound semiconductor material layer and epitaxially formed to the monocrystalline compound semiconductor material layer.

대표청구항 ▼

We claim: 1. A process for fabricating a tandem color photosensing semiconductor structure comprising: providing a monocrystalline silicon substrate; depositing a first buffer layer overlaying the monocrystalline silicon substrate, the first buffer layer epitaxially forming a monocrystalline oxide

We claim: 1. A process for fabricating a tandem color photosensing semiconductor structure comprising: providing a monocrystalline silicon substrate; depositing a first buffer layer overlaying the monocrystalline silicon substrate, the first buffer layer epitaxially forming a monocrystalline oxide layer overlying the monocrystalline silicone substrate; forming a first photodiode layer overlying the first buffer layer, the first photodiode layer operable to provide a first signal indicative of a color associated with the first wavelength of light forming a second buffer layer overlying the first photodiode layer; and forming a second photodiode layer, the second photodiode layer operable to provide a second signal indicative of a color associated with the second wavelength of light, wherein forming the first buffer layer further comprises forming a first monocrystalline oxide film overlying the monocrystalline silicon substrate, forming a monocrystalline compound semiconductor material on the first monocrystalline oxide film, forming a second monocrystalline oxide layer or layered compound semiconductor overlying the monocrystalline compound semiconductor material. 2. The process of claim 1, further comprising: forming a third buffer layer overlying the second photodiode layer; and forming a third photodiode layer overlying the third buffer layer, the third photodiode layer operable to provide a third signal indicative of a color associated with the third wavelength of light. 3. The process of claim 1 further comprising: forming a processor, the processor operable to store and process data corresponding to the signals from the first photodiode layer. 4. The process of claim 1 wherein the first photodiode layer includes: a monocrystalline compound semiconductor material having a thickness of the absorption length of a red portion of visible light. 5. The process of claim 1 wherein the second buffer layer includes: a monocrystalline compound semiconductor material. 6. The process of claim 1 wherein the second photodiode layer includes: a monocrystalline compound semiconductor material having a thickness of the absorption length of a green portion of visible light. 7. The process of claim 2 wherein the third buffer layer includes: a monocrystalline compound semiconductor material. 8. The process of claim 2 wherein the third photodiode layer includes: a monocrystalline compound semiconductor material having a thickness of the absorption length of a blue portion of visible light.