초록 ▼

This invention provides a method of manufacturing a substrate having a thin buried insulating film. An insulating layer ( 12) is formed on a single-crystal Si substrate (11). Ions are implanted into the substrate (11) through the insulating layer ( 12) to form an ion-implanted layer (13). The insula

This invention provides a method of manufacturing a substrate having a thin buried insulating film. An insulating layer ( 12) is formed on a single-crystal Si substrate (11). Ions are implanted into the substrate (11) through the insulating layer ( 12) to form an ion-implanted layer (13). The insulating layer (12) is thinned down to form a thin insulating layer (12 a). A thus prepared first substrate is placed on a second substrate (20) to form a bonded substrate stack (30). After that, the bonded substrate stack (30) is split at the ion-implanted layer (13).

대표청구항 ▼

What is claimed is: 1. A method of manufacturing a substrate having a buried insulating layer, comprising an insulating layer formation step of forming an insulating layer on a semiconductor region of a first substrate including the semiconductor region; an implantation step of implanting ions into

What is claimed is: 1. A method of manufacturing a substrate having a buried insulating layer, comprising an insulating layer formation step of forming an insulating layer on a semiconductor region of a first substrate including the semiconductor region; an implantation step of implanting ions into the semiconductor region through the insulating layer to form an ion-implanted layer; an insulating layer thinning step of thinning down the insulating layer by chemical etching after the implantation step; a bonding step of bonding a second substrate to the first substrate via the insulating layer to prepare a bonded substrate stack after the insulating layer thinning step; and a splitting step of splitting the bonded substrate stack by using the ion-implanted layer to obtain a substrate which has the insulating layer on the second substrate and a semiconductor layer as part of the semiconductor region on the insulating layer. 2. The method according to claim 1, further comprising a removal step of removing the ion-implanted layer that remains on a surface of the second substrate after splitting. 3. The method according to claim 2, wherein the removal step includes a step of etching the surface of the second substrate after splitting. 4. The method according to claim 2, wherein the removal step includes a step of polishing the surface of the second substrate after splitting. 5. The method according to claim 1, further comprising a semiconductor layer thinning step of thinning down the semiconductor layer on the second substrate after splitting. 6. The method according to claim 5, wherein the semiconductor layer thinning step includes a step of etching the semiconductor layer. 7. The method according to claim 5, wherein the semiconductor layer thinning step includes a step of polishing the semiconductor layer. 8. The method according to claim 1, wherein in the insulating layer formation step, the insulating layer is formed on the first substrate having an epitaxial layer on a surface.