초록 ▼

A semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in the condition where the seed crystal substrate is removed, electrodes are provided respectively on a first surface of the semiconductor crystal layer and a second surface of

A semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in the condition where the seed crystal substrate is removed, electrodes are provided respectively on a first surface of the semiconductor crystal layer and a second surface of the semiconductor layer opposite to the first surface, and lead-out electrodes connected to the electrodes are led out to the same surface side of the insulating material. The semiconductor crystal layer functions as a semiconductor light-emitting device or a semiconductor electronic device. The insulating material is, for example, a resin.

대표청구항 ▼

What is claimed is: 1. An electronic part wherein a semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in a condition where said seed crystal substrate is removed, electrodes are provided respectively on a first surface of said s

What is claimed is: 1. An electronic part wherein a semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in a condition where said seed crystal substrate is removed, electrodes are provided respectively on a first surface of said semiconductor crystal layer and a second surface of said semiconductor crystal layer opposite to said first surface, and lead-out electrodes connected to said electrodes are led out to a same surface side of said insulating material; wherein the seed crystal substrate is comprises of one of sapphire, gallium arsenide, indium phosphide and silicon and said semiconductor layer comprises GaN.