Transistor and method for manufacturing the same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-021/84
H01L-021/70
출원번호
US-0760294
(2004-01-21)
우선권정보
JP-5-041832(1993-02-05)
발명자
/ 주소
Kusumoto,Naoto
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Nixon Peabody LLP
인용정보
피인용 횟수 :
3인용 특허 :
13
초록▼
In a process for manufacturing a thin film transistor having a semiconductor layer constituting source and drain regions and a channel forming region, by the semiconductor layer being made thinner in the source and drain regions than in the channel forming region a structure is realized wherein, at
In a process for manufacturing a thin film transistor having a semiconductor layer constituting source and drain regions and a channel forming region, by the semiconductor layer being made thinner in the source and drain regions than in the channel forming region a structure is realized wherein, at the boundary between the source region and the channel forming region and the boundary between the drain region and the channel forming region, portions where electric field concentrations occur are displaced from the portion where a channel is formed. By reducing the OFF current (the leak current) without also reducing the ON current, a high mutual conductance is realized.
대표청구항▼
What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate; forming an insulating film over the semiconductor film; forming a conductive film over the insulating film; and etching the conductive film, the insulati
What is claimed is: 1. A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate; forming an insulating film over the semiconductor film; forming a conductive film over the insulating film; and etching the conductive film, the insulating film and the semiconductor film to form a gate electrode, a gate insulating film and a semiconductor island, respectively, so that the semiconductor island has a protrusion and edges of the gate electrode, the gate insulating film and the protrusion are substantially aligned with each other. 2. A method according to claim 1, wherein a channel region is formed in the protrusion. 3. A method according to claim 1, wherein the etching is performed by an RIE method. 4. A method according to claim 1, wherein the semiconductor film is crystallized by irradiating a laser light. 5. A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate; forming an insulating film over the semiconductor film; forming a conductive film over the insulating film; and etching the conductive film, the insulating film and the semiconductor film to form a gate electrode, a gate insulating film and a semiconductor island, respectively, so that the semiconductor island has a protrusion and edges of the gate electrode, the gate insulating film and the protrusion are substantially aligned with each other, wherein the protrusion has a height of 200 to 2000 angstroms. 6. A method according to claim 5, wherein a channel region is formed in the protrusion. 7. A method according to claim 5, wherein the etching is performed by an RIE method. 8. A method according to claim 5, wherein the semiconductor film is crystallized by irradiating a laser light. 9. A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate; forming an insulating film over the semiconductor film; forming a conductive film over the insulating film; and etching the conductive film, the insulating film and the semiconductor film to form a gate electrode, a gate insulating film and a semiconductor island, respectively, so that the semiconductor island has a protrusion and edges of the gate electrode, the gate insulating film and the protrusion are substantially aligned with each other, wherein the gate electrode comprises a material selected from the group consisting of polysilicon, aluminum, chromium, molybdenum and tantalum. 10. A method according to claim 9, wherein a channel region is formed in the protrusion. 11. A method according to claim 9, wherein the etching is performed by an RIE method. 12. A method according to claim 9, wherein the semiconductor film is crystallized by irradiating a laser light. 13. A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film over a substrate; forming an insulating film over the semiconductor film; forming a conductive film over the insulating film; etching the conductive film, the insulating film and the semiconductor film to form a gate electrode, a gate insulating film and a semiconductor island, respectively, so that the semiconductor island has a protrusion and edges of the gate electrode, the gate insulating film and the protrusion are substantially aligned with each other; doping an impurity element into the semiconductor island to form source and drain regions, wherein a thickness Ta of the source and drain regions and a thickness of the protrusion Tb satisfy 0.3<Tb/Ta<0.9. 14. A method according to claim 13, wherein a channel region is formed in the protrusion. 15. A method according to claim 13, wherein the etching is performed by an RIE method. 16. A method according to claim 13, wherein the semiconductor film is crystallized by irradiating a laser light.
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