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A method and apparatus for using fixed abrasive polishing pads that contain posts for chemical mechanical polishing (CMP). The posts have different shapes, different sizes, different heights, different materials, different distribution of abrasive particles and different process chemicals. This inv

A method and apparatus for using fixed abrasive polishing pads that contain posts for chemical mechanical polishing (CMP). The posts have different shapes, different sizes, different heights, different materials, different distribution of abrasive particles and different process chemicals. This invention also includes preconditioning fixed abrasive articles comprising a plurality of posts so that the posts have equal heights above the backing to achieve a uniform texture. This invention relates to improvements with respect to in situ rate measurement (ISRM) devices. The invention resides in providing a mechanical means, such as a notch, to determine when approaching the end of the abrasive web roll. The invention resides in coding the web throughout its length to enable determining the location of different portions of the web. This invention resides in providing perforations in the sides or end of the web for improved handling.

대표청구항 ▼

What is claimed is: 1. An article for polishing semiconductor substrates, comprising: a backing; and a conductive polishing layer disposed on the backing, the polishing layer comprising a conductive material disposed in a binder and having a predefined pattern of one or more interstitial spaces for

What is claimed is: 1. An article for polishing semiconductor substrates, comprising: a backing; and a conductive polishing layer disposed on the backing, the polishing layer comprising a conductive material disposed in a binder and having a predefined pattern of one or more interstitial spaces formed in the polishing layer, wherein the binder comprises a thermoplastic or thermosetting-type polymer. 2. The article of claim 1, wherein the conductive material comprises at least one of iron, nickel, copper, zinc, tin, lead, silver, gold, tungsten, titanium, palladium, bismuth, iridium, gallium, aluminum, or alloys thereof. 3. The article of claim 1, wherein the predefined pattern of interstitial spaces comprises a plurality of pockets formed in the polishing layer. 4. The article of claim 1, wherein the predefined pattern of interstitial spaces comprises a plurality of channels formed in the polishing layer. 5. The article of claim 1, wherein the predefined pattern of interstitial spaces comprises a plurality of flow paths formed in the polishing layer. 6. An article for polishing semiconductor substrates, comprising: a backing; and a conductive polishing layer disposed on the backing, the polishing layer comprising a conductive material disposed in a binder and having a predefined pattern of one or more interstitial spaces formed in the polishing layer, wherein the conductive material comprises at least one of a metal powder, metallized polymers, metallized ceramics, or graphite. 7. An article for polishing semiconductor substrates, comprising: a backing; and a conductive polishing layer disposed on the backing, the polishing layer comprising a conductive material disposed in a binder and having a predefined pattern of one or more interstitial spaces formed in the polishing layer, wherein the conductive material comprises conductive elements selected from at least one of particles, wires, filaments, or metallized flakes. 8. The article of claim 7, wherein the conductive material is a conductive element in the shape selected from at least one of spheres, rods, flakes, or filaments. 9. An article for polishing semiconductor substrates, comprising: a backing; and a conductive polishing layer disposed on the backing, the polishing layer comprising a conductive material disposed in a binder and having a predefined pattern of one or more interstitial spaces formed in the polishing layer, wherein the conductive material further defines a plurality of posts extending from the backing. 10. An article for polishing semiconductor substrates, comprising: a backing; and a conductive polishing layer disposed on the backing, the polishing layer comprising a graphite disposed in a binder and having a predefined pattern of one or more interstitial spaces formed in the polishing layer. 11. The article of claim 10, wherein the conductive material further comprises graphite particles disposed in the binder; and wherein the binder is polymeric. 12. The article of claim 10, wherein the graphite further comprises graphite filaments disposed in the binder; and wherein the binder is polymeric. 13. The article of claim 10, wherein the graphite further comprises graphite rods disposed in the binder; and wherein the binder is polymeric. 14. An article for polishing semiconductor substrates, comprising: a backing; and a conductive polishing layer disposed on the backing, the polishing layer comprising a conductive material disposed in a binder and having a predefined pattern of one or more interstitial spaces formed in the polishing layer, wherein the conductive material further comprises at least one of tin or lead particles disposed in the binder; and wherein the binder is polymeric. 15. An article for polishing semiconductor substrates, comprising: a backing; and a plurality of conductive protrusions disposed on the backing and having a predetermined pattern of interstitial spaces disposed therebetween, the conductive protrusions comprising a conductive material disposed in a binder and wherein an upper surface of the conductive protrusions define a polishing surface. 16. The article of claim 15, wherein the conductive material comprises at least one of a metal powder, metallized polymers, metallized ceramics, or graphite. 17. The article of claim 15, wherein the conductive material comprises at least one of iron, nickel, copper, zinc, tin, lead, silver, gold, tungsten, titanium, palladium, bismuth, iridium, gallium, aluminum, or alloys thereof. 18. The article of claim 15, wherein the binder comprises a thermoplastic or thermosetting-type polymer. 19. The article of claim 15, wherein the conductive material comprises at least one of conductive particles, wires, filaments, or metallized flakes. 20. The article of claim 15, wherein the conductive material is in the shape selected from at least one of spheres, rods, flakes, or filaments. 21. The article of claim 15, wherein the conductive material is graphite. 22. The article of claim 15, wherein the conductive material further comprises graphite particles disposed in the binder; and wherein the binder is polymeric. 23. The article of claim 15, wherein the conductive material further comprises graphite filaments disposed in the binder; and wherein the binder is polymeric. 24. The article of claim 15, wherein the conductive material further comprises graphite rods disposed in the binder; and wherein the binder is polymeric. 25. The article of claim 15, wherein the conductive material further comprises at least one of tin or lead particles disposed in the binder; and wherein the binder is polymeric. 26. The article of claim 15, wherein the conductive protrusions further comprise a plurality of posts extending from the backing, the posts having a plurality of gaps disposed therebetween. 27. The article of claim 15, wherein the predetermined pattern of interstitial spaces comprises a plurality of pockets formed in the polishing layer. 28. The article of claim 15, wherein the predetermined pattern of interstitial spaces comprises a plurality of channels formed in the polishing layer. 29. The article of claim 15, wherein the predetermined pattern of interstitial spaces comprises a plurality of flow paths formed in the polishing layer. 30. An article for polishing semiconductor substrates, comprising: a backing; a conductive polishing surface disposed on the backing and comprising conductive material disposed in a binder; and a plurality of interstitial spaces formed in the polishing surface in a predetermined arrangement, wherein the predetermined arrangement of interstitial spaces comprises a plurality of flow paths formed in the polishing layer. 31. The article of claim 30, wherein the predetermined arrangement of interstitial spaces comprises a plurality of pockets formed in the polishing layer. 32. The article of claim 30, wherein the predetermined arrangement of interstitial spaces comprises a plurality of channels formed in the polishing layer.