초록 ▼

This invention is to reduce the influence of a gas generated by an anodizing reaction. A silicon substrate (101) to be processed is horizontally held. A negative electrode (129) is arranged on the upper side of the silicon substrate (101), and a positive electrode (114) is brought into contact with

This invention is to reduce the influence of a gas generated by an anodizing reaction. A silicon substrate (101) to be processed is horizontally held. A negative electrode (129) is arranged on the upper side of the silicon substrate (101), and a positive electrode (114) is brought into contact with the lower surface of the silicon substrate (101). The space between the negative electrode (129) and the silicon substrate (101) is filled with an HF solution (132). The negative electrode ( 129) has a number of degassing holes (130) to prevent a gas generated by the anodizing reaction from staying on the lower side of the negative electrode (129).

대표청구항 ▼

What is claimed is: 1. A processing method for a substrate, comprising: the first step of substantially horizontally holding the substrate, pivoting a negative electrode horizontally to oppose an upper surface of the substrate, placing a positive electrode on a lower side of the substrate, and fill

What is claimed is: 1. A processing method for a substrate, comprising: the first step of substantially horizontally holding the substrate, pivoting a negative electrode horizontally to oppose an upper surface of the substrate, placing a positive electrode on a lower side of the substrate, and filling a space between the substrate and said negative electrode with an electrolyte; the second step of applying a voltage between said negative electrode and said positive electrode to anodize the substrate while preventing a gas generated by an anodizing reaction from staying on a lower side of said negative electrode, and the third step of pivoting vertically the negative electrode after the anodizing process is complete. 2. The method according to claim 1, wherein a negative electrode having a structure for preventing the gas from staying on the lower side is used as said negative electrode. 3. The method according to claim 1, wherein a negative electrode having a degassing hole for preventing the gas from staying on the lower side is used as said negative electrode. 4. A method of manufacturing a substrate, comprising the steps of: forming a porous layer on a surface of a substrate by a substrate processing method of claim 1; preparing a first substrate having at least a semiconductor layer on the porous layer; bonding a second substrate to a surface of the first substrate on a side of the semiconductor layer to prepare a bonded substrate stack; and separating the bonded substrate stack into two substrates at the porous layer.