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Multiple floating guard ring edge termination for silicon carbide devices 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-031/312
출원번호 US-0731860 (2003-12-09)
발명자 / 주소
  • Ryu,Sei Hyung
  • Agarwal,Anant K.
출원인 / 주소
  • Cree, Inc.
대리인 / 주소
    Myers Bigel Sibley &
인용정보 피인용 횟수 : 54  인용 특허 : 35

초록 ▼

Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based semiconductor junction. An insulating layer, such as an oxide, is provided on the floating guard rings and a sili

대표청구항 ▼

That which is claimed is: 1. An edge termination structure for a silicon carbide semiconductor device, comprising: a plurality of spaced apart concentric floating guard rings in a silicon carbide layer that at least partially surround a silicon carbide-based semiconductor junction; an insulating la

이 특허에 인용된 특허 (35)

  1. Edmond John A. (Apex NC), Blue light emitting diode formed in silicon carbide.
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  2. Bakowski Mietek,SEX ; Gustafsson Ulf,SEX, Depletion region stopper for PN junction in silicon carbide.
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  3. Pfirsch Frank,DEX ; Rupp Roland,DEX, Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode.
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  4. Singh, Ranbir, Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same.
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  5. Bakowski Mietek,SEX ; Gustafsson Ulf,SEX ; Rottner Kurt,SEX ; Savage Susan,SEX, Fabrication of a SiC semiconductor device comprising a pn junction with a voltage absorbing edge.
    상세보기
  6. Takada Jun (Kasugai JPX) Yamaguchi Minori (Akashi JPX) Tawada Yoshihisa (Kobe JPX), Heat-resistant thin film photoelectric converter.
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  7. Kinoshita, Kozo; Hatakeyama, Tetsuo; Shinohe, Takashi, High withstand voltage semiconductor device.
    상세보기
  8. Akiyama Hajime,JPX, High withstand voltage semiconductor device and manufacturing method thereof.
    상세보기
  9. MacIver ; Bernard A., Ion implanted Schottky barrier diode.
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  10. Bakowski Mietek,SEX ; Gustafsson Ulf,SEX, Junction termination for SiC Schottky diode.
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  11. Amemiya Yoshihito (Fuchu JPX) Mizushima Yoshihiko (Fuchu JPX), Low loss and high speed diodes.
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  12. Ueno Katsunori,JPX ; Urushidani Tatsuo,JPX ; Hashimoto Koichi,JPX ; Ogino Shinji,JPX ; Seki Yasukazu,JPX, Manufacturing method of SiC Schottky diode.
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  13. Palmour John W. (Raleigh NC), Metal-insulator-semiconductor capacitor formed on silicon carbide.
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  14. Ota Yorito,JPX ; Masato Hiroyuki,JPX ; Kumabuchi Yasuhito,JPX ; Kitabatake Makoto,JPX, Method for forming an ohmic electrode.
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  15. Losehand Reinhard,DEX ; Werthmann Hubert,DEX, Method for producing a Schottky diode assembly formed on a semiconductor substrate.
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  16. Nilsson Per-.ANG.ke,SEX, Method for producing a pn-junction for a semiconductor device of SiC.
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  17. Parsons James D. (Newbury Park CA), Method of making ohmic contact structure.
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  18. Papanicolaou Nicolas A. (Silver Spring MD), Platinum and platinum silicide contacts on b 상세보기
  • Suzuki Akira (Nara JPX) Furukawa Katsuki (Osaka JPX), Process for producing a SiC semiconductor device.
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  • Einthoven Willem G. (Belle Mead NJ), Schottky barrier device and method of manufacture.
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  • Einthoven Willem G. (Belle Mead NJ), Schottky barrier device with doped composite guard ring.
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  • Iesaka Susumu (Tokyo JPX), Schottky barrier diode with guard ring.
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  • Losehand Reinhard,DEX ; Werthmann Hubert,DEX, Schottky diode assembly and production method.
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  • Ellwanger Russell C. (Orem UT), Schottky-type rectifier having controllable barrier height.
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  • Mitlehner Heinz,DEX ; Stephani Dietrich,DEX ; Weinert Ulrich,DEX, Semiconductor component having an edge termination means with high field blocking capability.
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  • Tatjana Traijkovic GB; Florin Udrea GB; Gehan Anil Joseph Amaratunga GB, Semiconductor device.
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  • Ishihara Shin-ichiro (Moriguchi JPX) Mori Koshiro (Osaka JPX) Tanaka Tsuneo (Nishinomiya JPX) Nagata Seiichi (Sakai JPX) Fukai Masakazu (Nishinomiya JPX), Semiconductor device and method of manufacturing the same.
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  • Konstantinov Andrey,SEX, Semiconductor device with a junction termination and a method for production thereof.
    상세보기
  • Bakowsky Mietek,SEX ; Bijlenga Bo,SEX ; Gustafsson Ulf,SEX ; Harris Christopher,SEX ; Savage Susan,SEX, SiC Semiconductor device comprising a pn Junction with a voltage absorbing edge.
    상세보기
  • Bakowski Mietek,SEX ; Gustafsson Ulf,SEX ; Harris Christopher I.,SEX, SiC semiconductor device comprising a pn junction.
    상세보기
  • Bakowski Mietek,SEX ; Gustafsson Ulf,SEX ; Rottner Kurt,SEX ; Savage Susan,SEX, SiC semiconductor device comprising a pn junction with a voltage absorbing edge.
    상세보기
  • Baliga Bantval Jayant, Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein.
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  • Weaver Carson E. (Tewksbury MA) Hower Philip L. (Concord MA), Structure for fast-recovery bipolar devices.
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  • Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.
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  • Kobayashi Hiroshi (Hino JPX) Sato Taxay (Hino JPX) Menjo Hiroshi (Hino JPX) Nishi Shinichi (Hino JPX) Watanabe Hideo (Hino JPX), Thin film Schottky barrier device.
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    2. Zhang, Qingchun; Agarwal, Anant K.; Sudarshan, Tangali S.; Bolotnikov, Alexander, Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same.
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    3. Zhang, Qingchun; Jonas, Charlotte; Agarwal, Anant K., Double guard ring edge termination for silicon carbide devices.
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    4. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant; Palmour, John Williams; Allen, Scott, Edge termination structure employing recesses for edge termination elements.
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    5. Ryu, Sei-Hyung; Agarwal, Anant K.; Ward, Allan, Edge termination structures for silicon carbide devices.
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    6. Ryu, Sei-Hyung; Capell, Doyle Craig; Cheng, Lin; Dhar, Sarit; Jonas, Charlotte; Agarwal, Anant; Palmour, John, Field effect transistor devices with low source resistance.
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    7. Ryu, Sei-Hyung; Capell, Doyle Craig; Cheng, Lin; Dhar, Sarit; Jonas, Charlotte; Agarwal, Anant; Palmour, John, Field effect transistor devices with low source resistance.
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    8. Zhang, Qingchun, High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability.
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    9. Das, Mrinal K.; Lin, Henry; Schupbach, Marcelo; Palmour, John Williams, High current, low switching loss SiC power module.
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    13. Zhang, Qingchun; Ryu, Sei-Hyung; Jonas, Charlotte; Agarwal, Anant K., High power insulated gate bipolar transistors.
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    14. Ryu, Sei-Hyung; Zhang, Qingchun, High voltage insulated gate bipolar transistors with minority carrier diverter.
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    17. Zhang, Qingchun, Insulated gate bipolar transistors including current suppressing layers.
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    18. Zhang, Qingchun; Ryu, Sei-Hyung, Junction Barrier Schottky diodes with current surge capability.
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    19. Henning, Jason; Zhang, Qingchun; Ryu, Sei-Hyung, Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same.
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    20. Henning, Jason; Zhang, Qingchun; Ryu, Sei-Hyung, Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same.
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    21. Zhang, Qingchun; Agarwal, Anant K., Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures.
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    22. Zhang, Qingchun; Agarwal, Anant K., Mesa termination structures for power semiconductor devices including mesa step buffers.
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    23. Imhoff, Eugene A.; Kub, Francis J.; Hobart, Karl D., Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices.
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    24. Fujikawa, Kazuhiro; Harada, Shin, Method of fabricating semiconductor device.
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    25. Fujikawa,Kazuhiro; Harada,Shin, Method of fabricating semiconductor device.
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    26. Ryu, Sei-Hyung; Agarwal, Anant K., Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations.
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    27. Ryu, Sei-Hyung; Agarwal, Anant K., Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations.
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    30. Zhang, Qingchun; Richmond, James Theodore; Agarwal, Anant K.; Ryu, Sei-Hyung, Power switching devices having controllable surge current capabilities.
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    31. Zhang, Qingchun; Henning, Jason, Recessed termination structures and methods of fabricating electronic devices including recessed termination structures.
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    32. Zhang, Qingchun; Henning, Jason, Recessed termination structures and methods of fabricating electronic devices including recessed termination structures.
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    33. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant Kumar; Palmour, John Williams; Allen, Scott, Schottky diode.
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    36. Henning, Jason Patrick; Zhang, Qingchun; Ryu, Sei-Hyung; Agarwal, Anant; Palmour, John Williams; Allen, Scott, Schottky diode employing recesses for elements of junction barrier array.
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    37. Mochizuki, Kazuhiro; Kameshiro, Norifumi, Semiconductor device and method of manufacturing the same, power conversion device, three-phase motor system, automobile, and railway vehicle.
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    40. Soendker, Erich H.; Hertel, Thomas A.; Saldivar, Horacio, Semiconductor device having an inorganic coating layer applied over a junction termination extension.
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