초록 ▼

This invention relates to a new improved method and structure in the fabricating of aluminum metal pads. The formation special aluminum bond pad metal structures are described which improve adhesion between the tantalum nitride pad barrier layer and the underlying copper pad metallurgy by a special

This invention relates to a new improved method and structure in the fabricating of aluminum metal pads. The formation special aluminum bond pad metal structures are described which improve adhesion between the tantalum nitride pad barrier layer and the underlying copper pad metallurgy by a special interlocking bond pad structure. It is the object of the present invention to provide a process wherein a special grid of interlocking via structures is placed in between the underlying copper pad metal and the top tantalum nitride pad barrier layer providing improved adhesion to the aluminum pad metal stack structure. This unique contact bond pad structure provides for thermal stress relief, improved wire bond adhesion to the aluminum pad, and prevents peeling during wire bond adhesion tests.

대표청구항 ▼

The invention claimed is: 1. A bond pad structure, comprising: a semiconductor substrate; a passivating layer forming multiple free-standing vertical islands to provide interlocking grid structures over said semiconductor substrate, wherein the vertical islands are separated by openings in said pas

The invention claimed is: 1. A bond pad structure, comprising: a semiconductor substrate; a passivating layer forming multiple free-standing vertical islands to provide interlocking grid structures over said semiconductor substrate, wherein the vertical islands are separated by openings in said passivating layer; a continuous barrier layer formed of tantalum nitride over said vertical islands of said passivating layer and in said openings; and a conducting pad formed within said openings and over said interlocking grid structures and over said barrier layer, whereby an upper surface of said conductive pad provides improved adhesion for subsequently formed bonds. 2. The bond pad structure of claim 1, wherein said conductive pad is formed of copper. 3. The bond pad structure of claim 1, wherein said passivating layer is selected from the group consisting of silicon oxide, silicon nitride and polyimide. 4. A bond pad structure, comprising: a semiconductor substrate; comprising interlocking grid structures, formed over said semiconductor substrate; a passivating layer, forming interlocking grid structures, said passivating layer having multiple openings to said interlocking grid structures to form multiple free-standing vertical islands; a barrier layer formed of tantalum nitride over said passivating layer and in said openings, wherein said barrier layer is contiguous over said vertical islands; a conducting pad formed over said interlocking grid structures and over said barrier layer, whereby an upper surface of said conductive pad provides improved adhesion for subsequently formed bonds, wherein said bond pad forms an interlocking grid array in the bond pad via contact region, which is approximately 100 by 100 microns square and the size of the island structures are from about 10 to 25 microns in width, approximately 4 microns in height, and from about 4 to 10 in number, of interlocking grid structures, increasing surface area for improved adhesion. 5. The bond pad structure of claim 1, wherein said conductive bond pad is formed of aluminum. 6. A bond pad structure for a semiconductor device, the structure comprising: an insulator layer adjacent to a semiconductor substrate; a metal wiring layer adjacent to the insulator layer; a passivation layer adjacent to the metal wiring layer, wherein at least a portion of the passivation layer is configured to provide a plurality of vertical island structures separated by spaces that expose a portion of the underlying metal wiring layer; a contiguous metal barrier layer formed of tantalum nitride covering the islands of the passivation layer and the exposed portions of the metal wiring layer, wherein the metal barrier layer conforms to a shape provided by the island structures and does not completely fill the spaces between the island structures; and a metal pad layer covering the metal barrier layer, wherein the metal pad layer fills the spaces between the island structures not filled by the metal barrier layer and rises above the island structures. 7. The bond pad structure of claim 6 wherein the metal barrier layer is substantially the same thickness throughout the bond pad structure. 8. The bond pad structure of claim 6 wherein the passivation layer is selected from the group consisting of silicon oxide, silicon nitride and polyimide. 9. The bond pad structure of claim 6 wherein the metal pad layer is formed of aluminum.