An apparatus for manufacturing a liquid crystal display device includes a vacuum processing chamber having a substrate entrance, an upper stage and a lower stage provided at an interior of the vacuum processing chamber, and a compensation system positioned within the vacuum processing chamber for co
An apparatus for manufacturing a liquid crystal display device includes a vacuum processing chamber having a substrate entrance, an upper stage and a lower stage provided at an interior of the vacuum processing chamber, and a compensation system positioned within the vacuum processing chamber for compensating for a temperature loss of the vacuum processing chamber when a pressure in the interior of the vacuum processing chamber is reduced.
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What is claimed is: 1. An apparatus for bonding a first substrate and a second substrate for a liquid crystal display device, comprising: a vacuum processing chamber having a substrate entrance; an upper stage and a lower stage provided at an interior of the vacuum processing chamber, the upper st
What is claimed is: 1. An apparatus for bonding a first substrate and a second substrate for a liquid crystal display device, comprising: a vacuum processing chamber having a substrate entrance; an upper stage and a lower stage provided at an interior of the vacuum processing chamber, the upper stage affixing the first substrate of the liquid crystal display device and the lower stage affixing the second substrate of the liquid crystal display device, the second substrate having a liquid crystal layer thereof; and a compensation system positioned within the vacuum processing chamber for compensating for a temperature loss of the vacuum processing chamber when a pressure in the interior of the vacuum processing chamber is reduced, wherein the compensation system includes at least one heat system for heating outer surfaces of an exterior of the vacuum processing chamber. 2. The apparatus according to claim 1, wherein the heating system is provided on the outer surfaces of the exterior of the vacuum processing chamber. 3. The apparatus according to claim 1, wherein the heating system includes coil heaters. 4. An apparatus for bonding a first substrate and a second substrate for a liquid crystal display device, comprising: a vacuum processing chamber having a substrate entrance; an upper stage and a lower stage provided at an interior of the vacuum processing chamber, the upper stage affixing the first substrate of the liquid crystal display device and the lower stage affixing the second substrate of the liquid crystal display device, the second substrate having a liquid crystal layer thereof; and a compensation system positioned within the vacuum processing chamber for compensating for a temperature loss of the vacuum processing chamber when a pressure in the interior of the vacuum processing chamber is reduced, wherein the compensation systems includes external heaters, and heating pipes formed along inner surfaces of the interior of the vacuum processing chamber. 5. An apparatus for bonding a first substrate and a second substrate for a liquid crystal display device, comprising: a vacuum Processing chamber having a substrate entrance; an upper stage and a lower stage provided at an interior of the vacuum processing chamber, the upper stage affixing the first substrate of the liquid crystal display device and the lower stage affixing the second substrate of the liquid crystal display device, the second substrate having a liquid crystal layer thereof; and a compensation system positioned within the vacuum processing chamber for compensating for a temperature loss of the vacuum processing chamber when a pressure in the interior of the vacuum processing chamber is reduced, wherein the compensation system includes heaters for heating a fluid, and a plurality of heat delivering pipes being formed along within sidewalls of the vacuum processing chamber. 6. A method for manufacturing a liquid crystal display device, comprising the steps of: loading first and second substrates inside a vacuum processing chamber having an entrance; closing the entrance of the vacuum processing chamber; reducing a pressure in an interior of the vacuum processing chamber; compensating for a temperature change in the vacuum processing chamber; bonding the first and second substrates together; venting the vacuum processing chamber; and unloading the first and second substrates from the interior of the vacuum processing chamber. 7. The method according to claim 6, wherein the step of loading includes absorbing the second substrate onto an upper stage and absorbing the first substrate onto a lower stage within the vacuum processing chamber, placing a substrate receiver into the interior of the vacuum processing chamber and under the second substrate absorbed onto the upper stage, affixing the second substrate onto the upper stage by a first electrostatic chuck, and affixing the first substrate by a second electrostatic chuck. 8. The method according to claim 6, wherein the step of compensating is performed after the step of loading and before the step of reducing a pressure. 9. The method according to claim 6, wherein the step of compensating is performed at a same time as the step of reducing a pressure. 10. The method according to claim 6, wherein the step of reducing a pressure is performed more than once. 11. The method according to claim 6, wherein the step of reducing a pressure includes steps of: absorbing and affixing the first substrate onto the lower stage; absorbing and affixing the second substrate onto the upper stage; reducing the pressure of the interior of the vacuum processing chamber for a first time; placing the substrate receiver under the second substrate absorbed onto the upper stage, and reducing the pressure of the vacuum processing chamber for a second time. 12. The method according to claim 6, further including a step of aligning the first and second substrates after the step of reducing a pressure and before the step of bonding. 13. The method according to claim 6, wherein the step of compensating for a temperature change includes increasing a temperature of the interior of the vacuum processing chamber to more than about 5' C. above room temperature. 14. The method according to claim 6, wherein, the step of compensating includes increasing a temperature of the interior of the vacuum processing chamber to more than about 35째 C. 15. The method according to claim 6, wherein the step of compensating includes increasing a temperature of the interior of the vacuum processing chamber to more than about 45째 C. 16. The method according to claim 6, wherein the step of compensating includes maintaining a temperature of the interior of the vacuum processing chamber at greater than 0째 C.
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