Supercritical fluid-assisted deposition of materials on semiconductor substrates
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/31
H01L-021/02
C08J-009/00
출원번호
US-0303479
(2002-11-25)
발명자
/ 주소
Xu,Chongying
Baum,Thomas H.
출원인 / 주소
Advanced Technology Materials, Inc.
인용정보
피인용 횟수 :
6인용 특허 :
14
초록▼
Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surfac
Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the substrate surface. Such approach permits use of precursors that otherwise would be wholly unsuitable for deposition applications, as lacking requisite volatility and transport characteristics for vapor phase deposition processes.
대표청구항▼
What is claimed is: 1. A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid, a surfactant and a precursor of the material to be deposited on the substrate, wherein the precursor comprises a precursor selected from the group co
What is claimed is: 1. A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid, a surfactant and a precursor of the material to be deposited on the substrate, wherein the precursor comprises a precursor selected from the group consisting of high k dielectric precursors, barrier layer precursors, metallization precursors, organometallic compounds, organometallic complexes, and Lewis base adducts thereof. 2. The deposition composition of claim 1, wherein the supercritical fluid comprises a fluid selected from the group consisting of: carbon dioxide, oxygen, argon, krypton, xenon, ammonia, urethane, ethane, methanol, ethanol, isopropanol, dimethyl ketone, sulfur hexafluoride, carbon monoxide, dinitrogen oxide, forming gas, hydrogen, and mixtures thereof. 3. The deposition composition of claim 1, wherein the supercritical fluid comprises carbon dioxide. 4. The deposition composition of claim 1, wherein said composition further comprises a co-solvent. 5. The deposition composition of claim 4, wherein said co-solvent comprises a solvent selected from the group consisting of: methanol, ethanol, isopropyl alcohol, N-methylpyrrolidone, N-octylpyrrolidine, N-phenylpyrrolidone, dimethylsulfoxide, sulfolane, catechol, ethyl lactate, acetone, butyl carbitol, monoethanolamine, butyrol lactose, diglycol amine, γ-butyrolactone, butylene carbonate, ethylene carbonate, and propylene carbonate. 6. The deposition composition of claim 1, consisting essentially of said supercritical fluid, said surfactant and said precursor. 7. The deposition composition of claim 1, consisting of said supercritical fluid, said surfactant and said precursor. 8. The deposition composition of claim 1, wherein said material comprises a semiconductor manufacturing material. 9. The deposition composition of claim 8, wherein said semiconductor manufacturing material comprises a material selected from the group consisting of semiconductor materials, high k dielectric materials, barrier layer materials, interconnect materials and metallization materials. 10. The deposition composition of claim 1, wherein said material comprises a semiconductor material. 11. The deposition composition of claim 1, wherein said material comprises a high k material. 12. The deposition composition of claim 1, wherein said material comprises a barrier layer material. 13. The deposition composition of claim 12, wherein said barrier layer material comprises a material selected from the group consisting of TiN, TaN, NbN, WN, and corresponding silicides thereof. 14. The deposition composition of claim 1, wherein said material comprises an interconnect material. 15. The deposition composition of claim 14, wherein said interconnect material comprises a material selected from the group consisting of metals and metal alloys. 16. The deposition composition of claim 15, wherein said material comprises a metal selected from the group consisting of copper and aluminum. 17. The deposition composition of claim 16, wherein said material comprises copper. 18. The deposition composition of claim 16, wherein said material comprises aluminum. 19. The deposition composition of claim 14, wherein said metallization material comprises a material selected from the group consisting of metals and metal alloys. 20. The deposition composition of claim 19, wherein said material comprises a metal selected from the group consisting of copper and aluminum. 21. The deposition composition of claim 20, wherein said material comprises copper. 22. The deposition composition of claim 20, wherein said material comprises aluminum. 23. The deposition composition of claim 1, wherein said material comprises a metallization material. 24. The decomposition composition of claim 1, further comprising at least one component selected from the group consisting of co-solvents, co-reactants, diluents, and deposition-enhancing agents. 25. The deposition composition of claim 24, wherein said at least one component comprises at least one co-solvent or co-reactant, wherein said at least one co-solvent or co-reactant is selected from the group consisting of alcohols, N-alkyl pyrrolidones, N-aryl pyrrolidones, dimethylsulfoxide, sulfolane, catechol, ethyl lactate, acetone, butyl carbitol, monoethanolamine, butyrol lactone, diglycol amine, γ-butyrolactone, butylene carbonate, ethylene carbonate, and propylene carbonate. 26. The deposition composition of claim 1, wherein the precursor has a concentration between 5% and 90% by weight, based on the weight of the supercritical fluid in the composition. 27. The deposition composition of claim 1, wherein said at least one surfactant comprises a surfactant selected from the group consisting of acetylenic alcohols, acetylenic diols, long alkyl chain secondary and tertiary amines, and fluorinated derivatives of the foregoing. 28. The deposition composition of claim 1, wherein said at least one surfactant comprises a surfactant selected from the group consisting of: 3,4-dimethyl-1-hexyn-3-ol; 2,4,7,9-tetramethyl-5-decyn-4,7-diol; and fluorinated surfactants. 29. The deposition composition of claim 1, wherein the precursor has a concentration not exceeding about 40% by weight, based on the weight of the supercritical fluid in the composition. 30. The deposition composition of claim 1, wherein the precursor comprises a thin film precursor. 31. The deposition composition of claim 1, wherein the precursor comprises a precursor selected from the group consisting of metal precursors and high k dielectric material precursors. 32. The deposition composition of claim 31, wherein the supercritical fluid comprises a supercritical fluid selected from the group consisting of carbon dioxide, methane, ethane, methanol, dimethyl ketone and sulfur hexafluoride. 33. The deposition composition of claim 1, wherein the precursor comprises a precursor selected from the group consisting of organometallic compounds and complexes, and Lewis base adducts thereof. 34. The deposition composition of claim 1, wherein the supercritical fluid comprises at least one supercritical fluid selected from the group consisting of carbon dioxide and argon. 35. The deposition composition of claim 1, further comprising at least one Lewis base. 36. The deposition composition of claim 1, wherein the supercritical fluid comprises a supercritical fluid selected from the group consisting of carbon dioxide, methane, methanol, dimethyl ketone and sulfur hexafluoride. 37. The deposition composition of claim 1, wherein the precursor comprises a metal precursor selected from the group consisting of metal beta-diketonates, metal formats, metal acetates, and Lewis base adducts of the foregoing. 38. The deposition composition of claim 37, wherein the metal precursor comprises a metal selected from the group consisting of copper, aluminum, titanium, tantalum, niobium, tungsten, molybdenum, chromium, cobalt. 39. The deposition composition of claim 1, wherein the metallization precursor comprises a copper precursor. 40. The deposition composition of claim 39, wherein the copper precursor is selected from the group consisting of: copper (II) β-diketonates, copper (II) carboxylates, copper (I) cyclopentadienes, copper (I) phenyls, copper (I) amides, and Lewis base adducts of the aforementioned copper (I) and copper (II) species. 41. The deposition composition of claim 39, wherein the copper precursor is selected from the group consisting of: β-diketonate copper compounds and complexes; copper (carboxylate)2 compounds and complexes; cyclopentadienyl copper-ligand complexes; copper aryl tetramers; and copper amides. 42. The deposition composition of claim 39, wherein the copper precursor is selected from the group consisting of: copper (β-diketonato)2 compounds and complexes; copper (carboxylate)2 compounds and complexes, wherein each carboxylate moiety is independently selected from the group consisting of C1-C40 carboxylate moieties; cyclopentadienyl copper-ligand complexes; copper phenyl tetramers; and copper amides. 43. The deposition composition of claim 39, wherein the copper precursor is selected from the group consisting of: Cu (II) (acac) 2, Cu (II) (thd)2, Cu (tod)2, Cu (formate) 2, Cu (acetate)2, CpCu(I)PMe3, Cu (I) pentaflurophenyl, Cu (I) t-butyl phenyl tetramer, and Cu(I) bis(trimethylsilylamide) tetramer. 44. The deposition composition of claim 1, further comprising an additive selected from the group consisting of hydrogen and ammonia. 45. The deposition composition of claim 1, wherein the precursor comprises a barrier layer or metallization precursor and the supercritical fluid comprises a supercritical fluid species selected from the group consisting of CO2, NH3, CH4, SF 6, N2O, and CO. 46. The deposition composition of claim 1, wherein the composition is devoid of fluorine-containing components. 47. The deposition composition of claim 1, wherein the metallization precursor comprises a copper (II) carboxylate compound or complex. 48. The deposition composition of claim 47, wherein the metallization precursor comprises copper formate. 49. The deposition composition of claim 47, wherein the metallization precursor comprises a copper formate polyamine complex. 50. The deposition composition of claim 1, wherein the metallization precursor comprises a copper precursor, and the composition further comprises a reducing agent. 51. The deposition composition of claim 50, wherein the reducing agent comprises at least one reducing agent selected from the group consisting of hydrogen, formaldehyde and alcohols. 52. The deposition composition of claim 50, wherein the reducing agent comprises hydrogen. 53. The deposition composition of claim 50, wherein the reducing agent comprises formaldehyde. 54. The deposition composition of claim 50, wherein the reducing agent comprises isopropanol. 55. The deposition composition of claim 54, wherein isopropanol is present in said composition at a concentration of from about 0.1% to about 99.9% by weight, based on the weight of the supercritical fluid. 56. The deposition composition of claim 1, wherein the metallization precursor comprises a copper precursor selected from the group consisting of copper carboxylates, copper β-diketonates, and complexes and adducts thereof, and the supercritical fluid is selected from the group consisting of CO2, CH4, C2H 6, CH3OH, C2H5OH, (CH3)2 CHOH, CH3COCH3 and SF6. 57. A deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid and a precursor of the material to be deposited on the substrate, wherein the precursor is insufficiently volatile for chemical vapor deposition in absence of the supercritical fluid. 58. The deposition composition for depositing material on a substrate, said deposition composition comprising a supercritical fluid and a precursor of the material to be deposited on the substrate, wherein the precursor comprises a barrier layer precursor selected from the group consisting of titanium (IV) tetrakis-dialkylamides, titanium pyrozolates, titanium amido compounds, titanium imido compounds, Ta (IV) pentakis(dialkylamido) compounds, tetrakis diethylamido titanium (TDEAT), tetrakis dimethylamino titanium (TDMAT), pentakis ethylmethylamido tantalum (PEMAT), pentakis dimethylamido tantalum (PDMAT), pentakis diethylamido tantalum (PDEAT) and corresponding W and Nb analogs of such titanium and tantalum compounds.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (14)
Van Cleemput, Patrick A.; Laxman, Ravi Kumar; Shu, Jen; Schulberg, Michelle T.; Nie, Bunsen, Dielectric films with low dielectric constants.
Hoy Kenneth L. (St. Albans WV) Nielsen Kenneth A. (Charleston WV), Electrostatic liquid spray application of coatings with supercritical fluids as diluents and spraying from an orifice.
Kirlin Peter S. ; Brown Duncan W. ; Baum Thomas H. ; Vaarstra Brian A. ; Gardiner Robin A., Metal complex source reagents for chemical vapor deposition.
Gardiner Robin A. ; Kirlin Peter S. ; Baum Thomas H. ; Gordon Douglas ; Glassman Timothy E. ; Pombrik Sofia ; Vaartstra Brian A., Method of forming metal films on a substrate by chemical vapor deposition.
Joseph M. DeSimone ; Saad A. Khan ; Joseph R. Royer ; Richard J. Spontak ; Teri Anne Walker, Method of making foamed materials using surfactants and carbon dioxide.
Wai, Chien M.; Ohde, Hiroyuki; Kramer, Steve, Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions.
Gardiner Robin A. ; Kirlin Peter S. ; Baum Thomas H. ; Gordon Douglas ; Glassman Timothy E. ; Pombrik Sofia ; Vaartstra Brian A., Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions.
Kirlin Peter S. (Brookfield CT) Brown Duncan W. (Wilton CT) Gardiner Robin A. (Bethel CT), Source reagent compounds for MOCVD of refractory films containing group IIA elements.
Chen, Li-Min; Lippy, Steven; White, Daniela; Cooper, Emanuel I., Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.