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"" 따옴표 내의 구문과 완전히 일치하는 문서만 검색 예) "Transform and Quantization"

특허 상세정보

Apparatus for fabricating a III-V nitride film and a method for fabricating the same

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) C30B-025/08   
미국특허분류(USC) 117/200; 117/202; 117/099; 117/952; 118/715; 118/719
출원번호 US-0928523 (2001-08-13)
우선권정보 JP-2000-264934(2000-09-01); JP-2000-293596(2000-09-27); JP-2001-207785(2001-07-09)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Burr &
인용정보 피인용 횟수 : 13  인용 특허 : 13
초록

A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum...

대표
청구항

What is claimed is: 1. An apparatus for fabricating a III-V nitride film including at least Al on a given substrate using a Hydride Vapor Phase Epitaxy method using a chloride-based gas, comprising a double reactor structure constructed of an inner reactor to hold a substrate and at least an aluminum metallic material therein and an outer reactor surrounding the inner reactor comprising a silicon oxide-based material, the inner reactor and the outer reactor being spaced from one another, and an evacuation system in communication with a space between the...

이 특허에 인용된 특허 (13)

  1. Razeghi Manijeh ; Kung Patrick. Fabrication of defect free III-nitride materials. USP2001086271104.
  2. Vaudo, Robert P.; Redwing, Joan M.; Tischler, Michael A.; Brown, Duncan W.; Flynn, Jeffrey S.. GaN-based devices using thick (Ga, Al, In)N base layers. USP2003036533874.
  3. Vaudo, Robert P.; Flynn, Jeffrey S.; Brandes, George R.; Redwing, Joan M.; Tischler, Michael A.. III-V nitride substrate boule and method of making and using the same. USP2003076596079.
  4. Mayeda Mark I. (Las Vegas NV). Leak detection system for a gas manifold of a chemical vapor deposition apparatus. USP1997035614249.
  5. Kim Dae-woo,KRX ; Lee Jae-kyung,KRX ; Koo Bon-rip,KRX ; Kim Sang-woon,KRX. Leakage gas detector for semiconductor device and leakage gas detecting method using the same. USP1998035728940.
  6. Radhakrishnan Gouri (Culver City CA). Low temperature photolytic deposition of aluminum nitride thin films. USP1997075650361.
  7. Razeghi Manijeh (Wilmette IL). Method for growing III-V semiconductor films using a coated reaction chamber. USP1997025599732.
  8. Dentai Andrew G. (Atlantic Highlands NJ) Joyner ; Jr. Charles H. (Middletown NJ) Weidman Timothy W. (Westfield NJ) Zilko John L. (Fanwood NJ). Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors. USP1989054830982.
  9. Kang Sang-bom,KRX ; Park Chang-soo,KRX ; Chae Yun-sook,KRX ; Lee Sang-in,KRX. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same. USP2001036197683.
  10. Nakamura Shuji (Anan JPX). Method of vapor-growing semiconductor crystal and apparatus for vapor-growing the same. USP1994085334277.
  11. Ueda Tetsuzo ; Solomon Glenn S. ; Miller David J.. Particle trap apparatus and methods. USP2000096117213.
  12. Molnar Richard J.. Process for producing high-quality III-V nitride substrates. USP2000076086673.
  13. Kawase, Nobuo; Aigo, Masayoshi. Quartz tube for thermal processing of semiconductor substrates. USP1983054382776.

이 특허를 인용한 특허 피인용횟수: 13

  1. Hashimoto, Tadao; Letts, Edward. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride. USP2016099441311.
  2. Hashimoto, Tadao; Letts, Edward. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride. USP2014078764903.
  3. Hashimoto, Tadao; Letts, Edward; Ikari, Masanori. High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal. USP20181010087548.
  4. Hashimoto, Tadao; Letts, Edward; Ikari, Masanori. High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal. USP2012088236267.
  5. Hashimoto, Tadao; Letts, Edward; Ikari, Masanori. Method for producing group III-nitride wafers and group III-nitride wafers. USP2017109803293.
  6. Hashimoto, Tadao; Ikari, Masanori; Letts, Edward. Method for testing group III-nitride wafers and group III-nitride wafers with test data. USP2013108557043.
  7. Hashimoto, Tadao; Ikari, Masanori; Letts, Edward. Method for testing group III-nitride wafers and group III-nitride wafers with test data. USP2013018357243.
  8. Hashimoto, Tadao; Ikari, Masanori; Letts, Edward. Method for testing group III-nitride wafers and group III-nitride wafers with test data. USP2013118585822.
  9. Vispute,Ratnakar D.; Jones,Evan Bertrue. Method of growing insulating, semiconducting, and conducting group III-nitride thin films and coatings, and use as radiation hard coatings for electronics and optoelectronic devices. USP2009027494546.
  10. Letts, Edward; Hashimoto, Tadao; Ikari, Masanori. Methods for producing GaN nutrient for ammonothermal growth. USP2014108852341.
  11. Letts, Edward; Hashimoto, Tadao; Ikari, Masanori. Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth. USP2018059985102.
  12. Letts, Edward; Hashimoto, Tadao; Ikari, Masanori. Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth. USP2014058728234.
  13. Asano, Hideki. Semiconductor layer, process for forming the same, and semiconductor light emitting device. USP2010067727791.