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Plasma processing apparatus, and electrode structure and table structure of processing apparatus 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/509
  • C23C-016/50
  • C23F-001/00
  • H01L-021/306
  • H01L-021/02
출원번호 US-0667770 (2000-09-22)
우선권정보 JP-11-173613(1999-06-21); JP-2000-168297(2000-06-05)
발명자 / 주소
  • Komino,Mitsuaki
  • Sasaki,Yasuharu
  • Tsuboi,Kyo
  • Amano,Hideaki
출원인 / 주소
  • Tokyo Electron Limited
대리인 / 주소
    Pillsbury Winthrop LLP
인용정보 피인용 횟수 : 48  인용 특허 : 30

초록

An electrode structure used in a plasma processing apparatus which performs a predetermined process on an object (W) to be processed by using a plasma in a process chamber (26) in which a vacuum can be formed. An electrode unit (38) has a heater unit ( 44) therein. A cooling block (40) having a cool

대표청구항

What is claimed is: 1. An electrode structure used in a plasma processing apparatus which performs a predetermined process on an object to be processed by using a plasma in a process chamber in which a vacuum can be formed, the electrode structure comprising: an electrode unit having a heater unit

이 특허에 인용된 특허 (30)

  1. Visser Jan (Eindhoven NLX), Apparatus and method for treating flat substrate under reduced pressure in the manufacture of electronic devices.
  2. Gilchrist Robin ; Wilhoit Michael S., Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment.
  3. Cheung David W. (Foster City CA) Fodor Mark A. (Los Gatos CA) Lane Christopher (Sunnyvale CA) Mortensen Harold H. (Carlsbad CA), Ceramic susceptor with embedded metal electrode and eutectic connection.
  4. Husain Anwar (Pleasanton CA) Kotecki David E. (Hopewell Junction NY) Lassig Stephan E. (Poughkeepsie NY) Olson Kurt A. (Sebastopol CA) Ricci Anthony J. (Hopewell Junction NY), Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity.
  5. Lei Lawrence C. (Milpitas CA) Leung Cissy (Fremont CA), Controlling edge deposition on semiconductor substrates.
  6. Sherman Arthur (600 Sharon Park Dr. ; Suite C307 Menlo Park CA 94025), Electrostatic chuck.
  7. Watanabe Masahide (Yamanashi-ken JPX) Kubota Masami (Yamanashi-ken JPX) Koyama Shiro (Tokyo JPX) Ishikawa Kenji (Sagamihara JPX) Kazama Kouichi (Yamanashi-ken JPX) Komino Mitsuaki (Tokyo JPX) Sakurai, Electrostatic chuck.
  8. Nozawa Toshihisa (Yokohama JPX) Arami Junichi (Hachioji JPX) Hasegawa Isahiro (Zushi JPX) Okumura Katsuya (Yokohama JPX), Electrostatic chuck and plasma apparatus equipped therewith.
  9. Shamouilian Shamouil ; Somekh Sasson ; Levinstein Hyman J. ; Birang Manoocher ; Sherstinsky Semyon ; Cameron John F., Electrostatic chuck with conformal insulator film.
  10. Christensen Robert W. (Monte Sereno CA), Induction heated pancake epitaxial reactor.
  11. Kakehi Yutaka (Hikari JPX) Nakazato Norio (Kudamatsu JPX) Fukushima Yoshimasa (Hikari JPX) Hiratsuka Kousai (Kudamatsu JPX) Shibata Fumio (Kudamatsu JPX) Yamamoto Noriaki (Kudamatsu JPX) Tsubone Tsun, Method and apparatus for controlling sample temperature.
  12. Kazama Kouichi (Yamanashi-ken JPX) Komino Mitsuaki (Tokyo JPX) Ishikawa Kenji (Sagamihara JPX) Ueda Yoichi (Yokohama JPX), Method of controlling temperature of susceptor.
  13. Mase Yasukazu (Tokyo JPX) Abe Masahiro (Yokohama JPX) Hirata Osamu (Kawasaki JPX), Method of determining end of cleaning of semiconductor manufacturing apparatus.
  14. Tamura Naoyuki,JPX ; Takahashi Kazue,JPX ; Ito Youichi,JPX ; Ogawa Yoshifumi,JPX ; Shichida Hiroyuki,JPX ; Tsubone Tsunehiko,JPX, Method of holding substrate and substrate holding system.
  15. Tamura Naoyuki,JPX ; Takahashi Kazue,JPX ; Ito Youichi,JPX ; Ogawa Yoshifumi,JPX ; Shichida Hiroyuki,JPX ; Tsubone Tsunehiko,JPX, Method of holding substrate and substrate holding system.
  16. Mori Yuzo,JPX ; Ishikawa Toshio,JPX, Method of performing high-efficiency machining by high-density radical reaction using a rotating electrode, device for.
  17. Deguchi Youichi (Tokyo JPX) Kawakami Satoru (Sagamihara JPX) Ueda Yoichi (Yokohama JPX) Komino Mitsuaki (Tokyo JPX), Plasma processing apparatus.
  18. Ishii Nobuo (Yamanashi-ken JPX), Plasma processing apparatus.
  19. Koshimizu Chishio,JPX, Plasma processing apparatus.
  20. Ueda Yoichi (Tokyo JPX) Komino Mitsuaki (Tokyo JPX) Kazama Koichi (Tokyo JPX), Plasma processing apparatus.
  21. Niori Yusuke,JPX ; Umemoto Koichi,JPX ; Ushikoshi Ryusuke,JPX, Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof.
  22. Dhindsa Rajinder, Solid state temperature controlled substrate holder.
  23. Ishikawa Kenji (Sagamihara JPX) Komino Mitsuaki (Tokyo JPX) Mitui Tadashi (Yamanashi JPX) Iwata Teruo (Nirasaki JPX) Arai Izumi (Yokohama JPX) Tahara Yoshifumi (Tokyo JPX), Stage having electrostatic chuck and plasma processing apparatus using same.
  24. Tamura Naoyuki,JPX ; Takahashi Kazue,JPX ; Ito Youichi,JPX ; Ogawa Yoshifumi,JPX ; Shichida Hiroyuki,JPX ; Tsubone Tsunehiko,JPX, Substrate holding system including an electrostatic chuck.
  25. Lakios Emmanuel N. (Port Jefferson Station NY) McGraw Michael F. (East Setauket NY), Substrate transport and cooling apparatus and method for same.
  26. Heimanson Dorian ; Omstead Thomas R., Temperature controlled chuck for vacuum processing.
  27. Tezuka Masashi (Zama JPX), Vacuum processing apparatus wherein temperature can be controlled.
  28. Rice Michael ; Askarinam Eric ; Schneider Gerhard ; Collins Kenneth S., Vacuum processing chamber having multi-mode access.
  29. McMillin Brian ; Barnes Michael ; Berney Butch ; Nguyen Huong, Variable high temperature chuck for high density plasma chemical vapor deposition.
  30. Tsubone, Tsunehiko; Tamura, Naoyuki; Kato, Shigekazu; Nishihata, Kouji; Itou, Atsushi, Wafer cooling method and apparatus.

이 특허를 인용한 특허 (48)

  1. Miyashita,Kinya; Tatsumi,Yoshiaki, Aluminium composite structure having a channel therein and method of manufacturing the same.
  2. Forbes Jones, Robin M.; Kennedy, Richard L., Apparatus and method for clean, rapidly solidified alloys.
  3. Forbes Jones, Robin M.; Kennedy, Richard L., Apparatus and method for clean, rapidly solidified alloys.
  4. Forbes Jones, Robin M.; Kennedy, Richard L., Apparatus and method for clean, rapidly solidified alloys.
  5. Forbes Jones, Robin M.; Kennedy, Richard L., Apparatus and method for clean, rapidly solidified alloys.
  6. Forbes Jones, Robin M.; Kennedy, Richard L., Apparatus and method for clean, rapidly solidified alloys.
  7. Liu, Wei; Swenberg, Johanes F.; Nguyen, Hanh D.; Nguyen, Son T.; Curtis, Roger; Bottini, Philip A.; Mark, Michael J., Apparatus and method for controlling edge performance in an inductively coupled plasma chamber.
  8. Verhaverbeke, Steven; Gouk, Roman; Xia, Li-Qun; Shek, Mei-yee; Jin, Yu, Apparatus and methods for silicon oxide CVD resist planarization.
  9. Dhindsa, Rajinder; Lenz, Eric, Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing.
  10. Dhindsa, Rajinder; Lenz, Eric, Apparatus including showerhead electrode and heater for plasma processing.
  11. Forbes Jones, Robin M.; Shaffer, Sterry A., Casting apparatus and method.
  12. Forbes Jones, Robin M.; Shaffer, Sterry A., Casting apparatus and method.
  13. Forbes Jones, Robin M.; Shaffer, Sterry A., Casting apparatus and method.
  14. Um, Pyung-yong, Chemical vapor deposition apparatus for equalizing heating temperature.
  15. Gaff, Keith William; Busche, Matthew; Ricci, Anthony; Povolny, Henry S.; Stevenot, Scott, Edge seal for lower electrode assembly.
  16. Schaefer, David; Chhatre, Ambarish; Gaff, Keith William; Lee, Sung, Edge seal for lower electrode assembly.
  17. Schaefer, David; Chhatre, Ambarish; Gaff, Keith William; Lee, Sung; Lai, Brooke Mesler, Edge seal for lower electrode assembly.
  18. Matyushkin, Alexander; Koosau, Dennis; Panagopoulos, Theodoros; Holland, John, Electrostatic chuck having a plurality of heater coils.
  19. Kato, Hitoshi; Honma, Manabu, Film deposition apparatus.
  20. Nam, Sang Ki; Dhindsa, Rajinder; Bise, Ryan, Heat transfer plate for a showerhead electrode assembly of a capacitively coupled plasma processing apparatus.
  21. Nasman, Ronald; Robison, Rodney L.; Fujisato, Toshiaki, High temperature electrostatic chuck and method of using.
  22. Forbes Jones, Robin M., Ion plasma electron emitters for a melting furnace.
  23. Colvin, Neil K.; Hsieh, Tseh-Jen, Ion source liner having a lip for ion implantation systems.
  24. Forbes Jones, Robin M.; Kennedy, Richard L., Melting furnace including wire-discharge ion plasma electron emitter.
  25. Forbes Jones, Robin M.; Kennedy, Richard L., Melting furnace including wire-discharge ion plasma electron emitter.
  26. Forbes Jones, Robin M., Method and apparatus for producing large diameter superalloy ingots.
  27. Forbes Jones, Robin M., Method and apparatus for producing large diameter superalloy ingots.
  28. Yamazaki, Shunpei, Method for producing semiconductor device and display device.
  29. Nogami, Hiroshi, Method of cleaning a CVD device.
  30. Lin, Xing; Sun, Jennifer Y.; Banda, Sumanth, Methods and apparatus toward preventing ESC bonding adhesive erosion.
  31. Tanaka, Sumi; Yamashita, Jun, Microwave plasma processing apparatus for semiconductor element production.
  32. Ma,Beom Suk, Plasma processing system.
  33. Kikuchi, Akihiro; Kayamori, Satoshi; Shima, Shinya; Sakamoto, Yuichiro; Higuchi, Kimihiro; Oohashi, Kaoru; Ueda, Takehiro; Shibuya, Munehiro; Gondai, Tadashi, Plasma processor and plasma processing method.
  34. Kikuchi, Akihiro; Kayamori, Satoshi; Shima, Shinya; Sakamoto, Yuichiro; Higuchi, Kimihiro; Oohashi, Kaoru; Ueda, Takehiro; Shibuya, Munehiro; Gondai, Tadashi, Plasma processor and plasma processing method.
  35. Kikuchi, Akihiro; Kayamori, Satoshi; Shima, Shinya; Sakamoto, Yuichiro; Higuchi, Kimihiro; Oohashi, Kaoru; Ueda, Takehiro; Shibuya, Munehiro; Gondai, Tadashi, Plasma processor and plasma processing method.
  36. Kennedy, Richard L.; Forbes Jones, Robin M., Processes, systems, and apparatus for forming products from atomized metals and alloys.
  37. Forbes Jones, Robin M.; Kennedy, Richard L.; Minisandram, Ramesh S., Refining and casting apparatus and method.
  38. Forbes Jones, Robin M.; Shaffer, Sterry A., Refining and casting apparatus and method.
  39. Forbes Jones, Robin M.; Shaffer, Sterry A., Refining and casting apparatus and method.
  40. Nam, Sang Ki; Dhindsa, Rajinder; Bise, Ryan, Showerhead electrode assembly in a capacitively coupled plasma processing apparatus.
  41. Nam, Sang Ki; Dhindsa, Rajinder; Bise, Ryan, Showerhead electrode assembly in a capacitively coupled plasma processing apparatus.
  42. Fischer, Andreas; Dhindsa, Rajinder, Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses.
  43. Hamelin, Thomas, Substrate holder having a fluid gap and method of fabricating the substrate holder.
  44. Busche, Matt; Mace, Adam; Kang, Michael; Ronne, Allan, Temperature controlled window of a plasma processing chamber component.
  45. Stone, Dale K.; Chipman, David J., Thermal shield for electrostatic chuck.
  46. Fink, Steven T.; Strang, Eric J., Thermally zoned substrate holder assembly.
  47. Fink, Steven T.; Strang, Eric J., Thermally zoned substrate holder assembly.
  48. Ohashi, Tomohiro; Makino, Akitaka; Kitada, Hiroho; Kihara, Hideki, Wafer processing based on sensor detection and system learning.
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