A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture cont
A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.
대표청구항▼
What is claimed is: 1. A semiconductor manufacturing method which performs reactive gas processing, wherein, when a substrate carrying system inserts a substrate from an airtight space in the substrate carrying system into a reaction chamber, and when the substrate is ejected from the reaction cham
What is claimed is: 1. A semiconductor manufacturing method which performs reactive gas processing, wherein, when a substrate carrying system inserts a substrate from an airtight space in the substrate carrying system into a reaction chamber, and when the substrate is ejected from the reaction chamber to the airtight space, a reactive gas is fed into the reaction chamber and reacts therein, the method comprising: a substrate carrying step of measuring the moisture content in the airtight space by a first moisture measuring device connected to the airtight space; inserting the substrate from the airtight space in the substrate carrying system into the reaction chamber, or ejecting the substrate from the reaction chamber into the airtight space in the substrate carrying system; and a gas processing step of performing a reactive-gas-process while measuring the moisture content in the reaction chamber by second moisture measuring device connected to the reaction chamber, after the substrate carrying step, wherein in the substrate carrying step, after it has been confirmed that the moisture content in the airtight space is lower than a first default value, the substrate is inserted from the airtight space into the reaction chamber, and the substrate is ejected from the reaction chamber to the airtight space; and in the gas processing step, the reactive-gas-process starts after it has been confirmed that the moisture content in the reaction chamber is lower than a second default value. 2. The semiconductor manufacturing method according to claim 1, at least said second default value being lower than 1 ppm. 3. The semiconductor manufacturing method according to claim 1, at least one of the first moisture measuring device and the second moisture measuring device comprising a laser moisture measuring device which radiates laser light into a tubular cell main body, connected to the airtight space and the reaction chamber, and measures an absorption spectrum of transmitted laser light. 4. The semiconductor manufacturing method according to claim 1 wherein the measurement of the moisture in the substrate carrying system is conducted in accordance with: an absorbant moisture measuring method; an electrostatic capacity moisture measuring method; or a qualitative analysis method. 5. The semiconductor manufacturing method according to claim 1 wherein the first default value of the moisture in the substrate carrying system is less than 5 ppm. 6. The semiconductor manufacturing method according to claim 1 wherein the first default value of the moisture in the substrate carrying system is less than 5 ppm. 7. A semiconductor manufacturing method for conducting a reactive-gas-process and measuring moisture content in a semiconductor manufacturing device, the semiconductor manufacturing device provided with an insertion load lock chamber, an ejection load lock chamber, a substrate carrying system having a carrying chamber and an inner gastight space, and a plurality of process chambers for receiving substrates from the substrate carrying system, the method comprising: measuring the moisture content in an inert gas in the insertion load lock chamber when the substrates are inserted into the insertion load lock chamber; inserting the substrates into the carrying chamber and measuring the moisture content in the inert gas in the carrying chamber only when the measured moisture content in the inert gas in the insertion load lock chamber is less than a predetermined value; inserting the substrates into the process chambers and measuring the moisture content in the inert gas in the process chambers only when the measured moisture content in the inert gas in the carrying chamber is less than a first default value; introducing a process gas law the process chambers and conducting epitaxial growth on the substrates only when the measured moisture content in the inert gas in the process chambers is less than a second default value; measuring the moisture content in the process gas exhausted from the process chamber after conducting the epitaxial growth; and measuring the moisture content in the inert gas in the ejection load lock chamber when the substrates are introduced into the ejection load lock chamber from the process chambers through the carrying chamber after conducting the epitaxial growth. 8. The method according to claim 7 wherein the first default value of the moisture content in the inert gas in the carrying chamber is 5 ppm, and the second default value of the moisture content in the inert gas in the process chamber is 1 ppm.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (18)
Kashiwagi Akihide,JPX ; Kataoka Toyotaka,JPX ; Suzuki Toshihiko,JPX, Apparatus for forming silicon oxide film and method of forming silicon oxide film.
McAndrew James ; Wang Hwa-Chi ; Jurcik ; Jr. Benjamin J., Chamber effluent monitoring system and semiconductor processing system comprising absorption spectroscopy measurement s.
McAndrew James ; Wang Hwa-Chi ; Jurcik ; Jr. Benjamin J., Chamber effluent monitoring system and semiconductor processing system comprising absorption spectroscopy measurement system, and methods of use.
Tapp Frederick (Hillsborough NC) Berger Henry (Durham NC), Method of performing an instantaneous moisture concentration measurement and for determining the drydown characteristics.
Walker Charles W. E. (591 W. 57th Ave. #301 Vancouver ; British Columbia CAX), Microwave moisture measurement of moving particulate layer after thickness leveling.
DiPerna, Paul M.; Brown, David; Rosinko, Mike; Kincade, Dan; Michaud, Michael; Nadworny, John; Kruse, Geoffrey A.; Ulrich, Thomas R., Infusion pump system with disposable cartridge having pressure venting and pressure feedback.
DiPerna, Paul M.; Brown, David; Rosinko, Mike; Kincade, Dan; Michaud, Michael; Nadworny, John; Kruse, Geoffrey A.; Ulrich, Thomas R., Infusion pump system with disposable cartridge having pressure venting and pressure feedback.
Verhoef, Erik T.; DiPerna, Paul M.; Rosinko, Mike; Williamson, Mark; Kruse, Geoffrey A.; Ulrich, Thomas R.; Lamb, Phil; Saint, Sean; Michaud, Michael; Trevaskis, William, Infusion pump system with disposable cartridge having pressure venting and pressure feedback.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.