초록 ▼

Described herein is a method and system for providing a countermeasure against laser detection systems using nanocomponent material that is tailored to cloak or obscure a target from detection by transmitted laser radiation. The nanodot material absorbs and/or down-converts the transmitted laser rad

Described herein is a method and system for providing a countermeasure against laser detection systems using nanocomponent material that is tailored to cloak or obscure a target from detection by transmitted laser radiation. The nanodot material absorbs and/or down-converts the transmitted laser radiation. Similarly, described herein is a method and system for providing a countermeasure against laser systems intended to blind a target through the use of a specifically engineered nanocomponent material for absorbing and/or down-converting the radiation from the laser system.

대표청구항 ▼

What is claimed is: 1. A method for countering target detection by a light source detection device comprising: engineering a first nanocomponent material to absorb at a first transmitted radiation wavelength of a first light source detection device; and applying the first nanocomponent material to

What is claimed is: 1. A method for countering target detection by a light source detection device comprising: engineering a first nanocomponent material to absorb at a first transmitted radiation wavelength of a first light source detection device; and applying the first nanocomponent material to the target, wherein at least a portion of the first transmitted radiation wavelength of the first light source detection device is absorbed by the first nanocomponent material such that a first reflected radiation wavelength from the target is below a level that is detectable by the first light source detection device; wherein the first nanocomponent material is comprised of a semiconductor material selected from Group II-VI and Group III-V material. 2. The method according to claim 1, wherein the first nanocomponent material is comprised of multiple first nanocomponents, wherein each first nanocomponent is less than 100 μm in diameter. 3. The method according to claim 2, wherein the first nanocomponents are selected from the group consisting of nanodots, nanorods, nanowires, and nanotubes. 4. The method according to claim 1, further comprising: engineering a second nanocomponent material to absorb at a second transmitted radiation wavelength of a second light source detection device; and applying the second nanocomponent material to the target, wherein at least a portion of the second transmitted radiation wavelength of the second light source detection device is absorbed by the second nanocomponent material such that a second reflected radiation wavelength from the target is below a level that is detectable by the second light source detection device. 5. The method according to claim 4 wherein the second nanocomponent material is comprised of a semiconductor material. 6. The method according to claim 5 wherein the semiconductor material is selected from Group II-VI and Group III-V material. 7. The method according to claim 4, wherein the second nanocomponent material is is comprised of multiple second nanocomponents, wherein each second nanocomponent is less than 100 μin diameter. 8. The method according to claim 7, wherein the second nanocomponents are selected from the group consisting of nanodots, nanorods, nanowires, and nanotubes. 9. The method according to claim 4, wherein the second nanocomponent material is comprised of multiple second nanocomponents, wherein each second nanocomponent is less than 100 nm in diameter. 10. The method according to claim 1, wherein the first nanocomponent material is comprised of multiple first nanocomponents, wherein each first nanocomponent is less than 100 nm in diameter. 11. A material for countering light source effects directed at a target comprising: at least a first nanocomponent material comprised of multiple first nanocomponents, wherein each of the multiple first nanocomponents are engineered to absorb and down-convert a first transmission radiation of a first light source directed at the target; and a mixer material for mixing with the first nanocomponent material, wherein the mixer material facilitates the addition of the first nanocomponent material to the target; wherein the first nanocomponent material is comprised of a semiconductor material selected from Group II-VI and Group III-V material. 12. The material according to claim 11, wherein the mixer material is paint. 13. The material according to claim 11, wherein the transmission wavelength is in the infrared spectrum. 14. The material according to claim 11, wherein each of the multiple first nanocomponents its is less than 100 μm in diameter. 15. The material according to claim 11, wherein each of the multiple first nanocomponents are selected from the group consisting of nanodots, nanorods, nanowires, and nanotubes. 16. The material according to claim 11, further comprising a second nanocomponent material comprised of multiple second nanocomponents, wherein each of the multiple second nanocomponents are engineered to absorb and down-convert a second transmission radiation of a second laser directed at the target. 17. The material according to claim 11, wherein each of the multiple first nanocomponents fits is less than 100 m in diameter.