초록 ▼

There are now provided thin-film solar cells and method of making. The devices comprise a low-cost, low thermal stability substrate with a semiconductor body deposited thereon by a deposition gas. The deposited body is treated with a conversion gas to provide a microcrystalline silicon body. The dep

There are now provided thin-film solar cells and method of making. The devices comprise a low-cost, low thermal stability substrate with a semiconductor body deposited thereon by a deposition gas. The deposited body is treated with a conversion gas to provide a microcrystalline silicon body. The deposition gas and the conversion gas are subjected to a pulsed electromagnetic radiation to effectuate deposition and conversion.

대표청구항 ▼

What is claimed is: 1. A method of forming a microcrystalline hydrogenated silicon body on a substrate, said method comprising the steps of: flowing a chemical vapor coating gas comprising hydrogen and silicon over said substrate and exciting said coating gas with at least one pulse of electromagne

What is claimed is: 1. A method of forming a microcrystalline hydrogenated silicon body on a substrate, said method comprising the steps of: flowing a chemical vapor coating gas comprising hydrogen and silicon over said substrate and exciting said coating gas with at least one pulse of electromagnetic radiation and depositing at least one film of amorphous hydrogenated silicon on said substrate; flowing a hydrogen treatment gas over said substrate and exciting said treatment gas with another at least one pulse of electromagnetic radiation to form hydrogen plasma after deposition of said at least one amorphous hydrogenated silicon film, and transforming said at least one amorphous hydrogenated silicon film with said hydrogen plasma into a film of microcrystalline hydrogenated silicon; and immediately switching said flow of said coating gas to said flow of said treatment gas to form a continuous flow of gas over said substrate. 2. The method according to claim 1, wherein said step of depositing comprises depositing at least one film of amorphous hydrogenated silicon comprising 1 to 50 amorphous hydrogenated silicon monolayers. 3. The method according to claim 2, wherein at least the first monolayer deposited on the substrate is in the form of a degressive gradient with an elevated, inherent microcrystalline hydrogenated silicon fraction. 4. The method according to claim 3, wherein said step of depositing comprises depositing at least one film of amorphous hydrogenated silicon having a thickness in the range of 0.1 to 5 nm. 5. The method according to claim 4, wherein said step of transforming comprises treating said at least one amorphous hydrogenated silicon film with said hydrogen plasma for an amount of time in the range of one of: up to 30 seconds; and up to 10 seconds. 6. The method according to claim 5, wherein said step of exciting said treatment gas comprises exciting said treatment gas with a pulse of electromagnetic radiation of ≧0.1 ms. 7. The method according to claim 6, wherein said method further comprises pausing between two pulses of said electromagnetic radiation when exciting said treatment gas, which pause is ≦ 200 ms. 8. The method according to claim 7, wherein said method further comprises forming a microcrystalline hydrogenated silicon body having a thickness of up to 5000 nm on said substrate. 9. The method according to claim 8, wherein said method further comprises exciting said treatment gas by microwave radiation having an excitation frequency of 2.45 GHz and a mean microwave power in the range of 150 mW/cm3 to 1500 mW/cm3. 10. The method according to claim 9, wherein: said chemical vapor comprises a coating gas which contains at least one Si-organic film-forming agent; and said coating gas is a silane gas which comprises SiH4 or a chlorosilane. 11. The method according to claim 10, wherein said method further comprises setting a process pressure of from 0.1 to 1 mbar. 12. The method according to claim 11, wherein the temperature of said substrate during said method is one of: less than 200째 C.; less than 100째 C.; and less than 50째 C. 13. The method according to claim 12, wherein said method further comprises: setting conductivities of said microcrystalline hydrogenated silicon film of from 10-7 S/cm to 10 S/cm; and using a substrate which is made from a glass, a glass ceramic or a plastic, and which is provided with a transparent, conductive film comprising one of: an ITO film, a doped SnO2 film, and a doped ZnO film. 14. The method according to claim 1, further comprising the steps of: attaching a first electrode to said substrate; and attaching a second electrode to said microcrystalline hydrogenated silicon. 15. The method according to claim 1, further comprising the step of attaching a gate electrode, a source electrode, and a drain electrode to said microcrystalline hydrogenated silicon. 16. The method according to claim 1, further comprising repeating the steps of: flowing a chemical vapor coating gas comprising hydrogen and silicon over said substrate and exciting said coating gas with at least one pulse of electromagnetic radiation and depositing at least one film of amorphous hydrogenated silicon on said substrate; flowing a hydrogen treatment gas over said substrate and exciting said treatment gas with another at least one pulse of electromagnetic radiation to form hydrogen plasma after deposition of said at least one amorphous hydrogenated silicon film, and transforming said at least one amorphous hydrogenated silicon film with said hydrogen plasma into a film of microcrystalline hydrogenated silicon; and immediately switching said flow of said coating gas to said flow of said treatment gas to form a continuous flow of gas over asid substrate. 17. The method according to claim 16, wherein said step of transforming comprises treating said at least one amorphous hydrogenated silicon film with said hydrogen plasma for an amount of time in the range of one of: up to 30 seconds; and up to 10 seconds. 18. The method according to claim 17, wherein: said step of exciting said treatment gas comprises exciting said treatment gas with a pulse of electromagnetic radiation of ≦0.1 ms; said method further comprises pausing between two pulses of said electromagnetic radiation when exciting said treatment gas, which pause is ≦200 ms; and said method further comprises forming a microcrystalline hydrogenated silicon body having a thickness of up to 5000 nm on said substrate. 19. The method according to claim 18, wherein: said method further comprises exciting said treatment gas by microwave radiation having an excitation frequency of 2.45 GHz and a mean microwave power in the range of 150 mW/cm3 to 1500 m/Wcm 3; said chemical vapor comprises a coating gas which contains at least one Si-organic film-forming agent; said coating gas is a silane gas which comprises SiH4 or a chlorosilane; and setting a process pressure of from 0.1 to mbar. 20. The method according to claim 19, wherein: the temperature of said substrate during said method is one of: less than 200째 C.; less than 100째 C.; and less than 50째 C.; and said method further comprises: setting conductivities of said microcrystalline hydrogenated silicon film of from 10-7 S/cm to 10 S/cm; and using a substrate which is made from a glass, a glass ceramic or a plastic, and which is provided with a transparent, conductive film comprising one of: an ITO film, a doped SnO2 film, and a doped ZnO film.