초록 ▼

A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least one reducing agent. The reaction of the at least one metal salt with the at least one reducing agent sim

A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least one reducing agent. The reaction of the at least one metal salt with the at least one reducing agent simultaneously deposits metal and a dopant thereof. The oxidation barrier may be used to form conductive structures of semiconductor device structures, such as a capacitor electrode, or may be formed adjacent conductive or semiconductive structures of semiconductor device structures to prevent oxidation thereof. The oxidation barrier is particularly useful for preventing oxidation during the formation and annealing of a dielectric structure from a high dielectric constant material, such as Ta2O5 or BST.

대표청구항 ▼

What is claimed is: 1. A semiconductor device structure comprising an oxidation barrier, the oxidation barrier comprising a doped metal or doped metal alloy layer co-deposited by electroless plating. 2. The semiconductor device structure of claim 1, wherein the doped metal or the doped metal allo

What is claimed is: 1. A semiconductor device structure comprising an oxidation barrier, the oxidation barrier comprising a doped metal or doped metal alloy layer co-deposited by electroless plating. 2. The semiconductor device structure of claim 1, wherein the doped metal or the doped metal alloy layer comprises at least one of platinum, rhodium, iridium, ruthenium, and palladium. 3. The semiconductor device structure of claim 1, wherein the doped metal or doped metal alloy layer is boron doped. 4. The semiconductor device structure of claim 3, wherein boron comprises about 0.1% to about 5.0% by weight of the doped metal or doped metal alloy layer. 5. The semiconductor device structure of claim 1, wherein the doped metal or doped metal alloy layer is phosphorus-doped. 6. The semiconductor device structure of claim 1, wherein the doped metal or doped metal alloy layer has a thickness of about 500 Å. 7. The semiconductor device structure of claim 1, wherein the doped metal or doped metal alloy layer has a thickness of about 100 Å. 8. A method of forming an oxidation barrier comprising co-depositing a doped metal or doped metal alloy layer by electroless plating over a semiconductor substrate. 9. The method of claim 8, further comprising forming a conductive structure over the oxidation barrier. 10. The method of claim 8, further comprising forming a dielectric layer over the oxidation barrier. 11. The method of claim 8, wherein co-depositing comprises introducing at least part of the semiconductor substrate into an aqueous metal solution comprising at least one metal salt and at least one reducing agent. 12. The method of claim 8, wherein co-depositing comprises introducing at least part of the semiconductor substrate into an aqueous metal solution comprising at least one reducing agent and at least one of platinum, rhodium, iridium, ruthenium, and palladium. 13. The method of claim 8, wherein co-depositing comprises introducing at least part of the semiconductor substrate into an aqueous metal solution comprising at least one metal salt and at least one of dimethylaminoborane, borohydride, and hydrazine. 14. The method of claim 8, wherein co-depositing comprises introducing at least part of the semiconductor substrate into an aqueous metal solution comprising at least one metal salt and at least one substance that alters a grain structure of a metal of the at least one metal salt. 15. The method of claim 8, wherein co-depositing comprises forming an oxidation barrier comprising a boron-doped metal. 16. The method of claim 8, wherein co-depositing comprises forming an oxidation barrier comprising a phosphorous-doped metal. 17. The method of claim 8, wherein co-depositing comprises forming an oxidation barrier adjacent a conductive layer on the semiconductor substrate. 18. An electroless plating bath for depositing an oxidation barrier on a semiconductor device structure, the bath comprising at least one metal salt and at least one of dimethylamineborane and potassium borohydride. 19. The electroless plating bath of claim 18, wherein the at least one metal salt comprises a salt of at least one of platinum, rhodium, iridium, ruthenium, and palladium. 20. The electroless plating bath of claim 18, further comprising a complexing agent.