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Semiconductor structure exhibiting reduced leakage current and method of fabricating same

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/12
  • H01L-029/02
출원번호 US-0207210 (2002-07-30)
발명자 / 주소
  • Yu,Zhiyi
  • Droopad,Ravindranath
출원인 / 주소
  • Freescale Semiconductor, Inc.
대리인 / 주소
    Oblon, Spivak, McClelland, Maier &
인용정보 피인용 횟수 : 6  인용 특허 : 559

초록

A semiconductor structure exhibiting reduced leakage current is formed of a monocrystalline substrate (101) and a strained-layer heterostructure (105). The strained-layer heterostructure has a first layer (102) formed of a first monocrystalline oxide material having a first lattice constant and a se

대표청구항

We claim: 1. A semiconductor structure exhibiting reduced leakage current comprising: a monocrystalline silicon substrate; an amorphous oxide material in contact with the monocrystalline silicon substrate; and a strained-layer heterostructure overlying said substrate, said heterostructure having: a

이 특허에 인용된 특허 (559)

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  175. Trinh Trang N. (Cypress CA) Smith ; Jr. Elroy C. (La Habra CA), Large array MMIC feedthrough.
  176. Pirrung Michael C. (Durham NC) Read J. Leighton (Palo Alto CA) Fodor Stephen P. A. (Palo Alto CA) Stryer Lubert (Stanford CA), Large scale photolithographic solid phase synthesis of polypeptides and receptor binding screening thereof.
  177. Plesko George A., Laser based PCMCIA data collection system with automatic triggering for portable applications and method of use.
  178. Holton ; William C., Laser for integrated optical circuits.
  179. Andringa Keimpe (Sherborn MA), Laser gyroscope.
  180. Smith Irl W. (Newton MA) Dorschner Terry A. (Newton MA), Laser gyroscope system.
  181. Lorenzo Joseph P. (Stow MA) Soref Richard A. (Newton MA), Lattice mismatched hetrostructure optical waveguide.
  182. Laibowitz Robert Benjamin ; Shaw Thomas McCarroll, Lead silicate based capacitor structures.
  183. Laibowitz Robert Benjamin ; Shaw Thomas McCarroll, Lead silicate based capacitor structures.
  184. Yoshida Susumu (Itami JPX), Light-electricity conversion semiconductor device.
  185. Katsuhide Manabe JP; Akira Mabuchi JP; Hisaki Kato JP; Michinari Sassa JP; Norikatsu Koide JP; Shiro Yamazaki JP; Masafumi Hashimoto JP; Isamu Akasaki JP, Light-emitting semiconductor device using gallium nitride group compound.
  186. MacLeod Cheryl A., Lightfast inks for ink-jet printing.
  187. Yonehara Takao,JPX ; Miyawaki Mamoru,JPX ; Ishizaki Akira,JPX ; Hoshi Junichi,JPX ; Sakamoto Masaru,JPX ; Sugawa Shigetoshi,JPX ; Inoue Shunsuke,JPX ; Koizumi Toru,JPX ; Kohchi Tetsunobu,JPX ; Sakagu, Liquid crystal image display unit and method for fabricating semiconductor optical member.
  188. Stauf Gregory T. ; Roeder Jeffrey F. ; Baum Thomas H., Liquid delivery MOCVD process for deposition of high frequency dielectric materials.
  189. Delcoco Robert J. (Columbia MD) Kroeger Brian W. (Ellicott City MD) Kurtz John J. (Catonsville MD), Local area network with star topology and ring protocol.
  190. Copel Matthew Warren ; von Hoegen Michael Horn,DEX ; Kolmer Le Goues Francoise Isabelle ; Tromp Rudolf Maria, Localized lattice-mismatch-accomodation dislocation network epitaxy.
  191. Chen Eugene ; Durlam Mark ; Tehrani Saied N., Low switching field magnetoresistive tunneling junction for high density arrays.
  192. Stacy Robert A. (St. Louis County MO) Rice Robert R. (Florissant MO), Low voltage electro-optic modulator.
  193. Sun Jonathan Zanhong ; Gupta Arunava ; Xiao Gang ; Trouilloud Philip Louis ; Lecoeur Philippe P.,FRX, Magnetic devices and sensors based on perovskite manganese oxide materials.
  194. Farb Joseph E. (Riverside CA), Magnetic field detection.
  195. Partin Dale Lee, Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer.
  196. Partin Dale L. (Ray MI) Heremans Joseph P. (Troy MI) Green Louis (Rochester Hills MI), Magnetic field sensor on elemental semiconductor substrate with electric field reduction means.
  197. Zanio Ken (El Toro CA) Bean Ross C. (Santa Ana CA), Manufacture of monolithic infrared focal plane arrays.
  198. Kume Hitoshi (Musashino JPX) Adachi Tetsuo (Hachioji JPX) Ohji Yuzuru (Tokyo JPX) Kure Tokuo (Tokyo JPX) Ushiyama Masahiro (Kokubunji JPX) Kawakami Hiroshi (Hachioji JPX), Manufacturing method of non-volatile semiconductor memory device.
  199. Joseph H. Abeles, Master oscillator vertical emission laser.
  200. Fischer Michael A. (San Antonio TX), Medium access control protocol for wireless network.
  201. Koganei Akio,JPX ; Nishimura Naoki,JPX, Memory device utilizing giant magnetoresistance effect.
  202. Gardner Mark I. ; Gilmer Mark C., Metal silicide transistor gate spaced from a semiconductor substrate by a ceramic gate dielectric having a high dielectric constant.
  203. Hayashi Shigenori (Nara JPX) Komaki Kazuki (Osaka JPX) Kamada Takeshi (Osaka JPX) Kitagawa Masatoshi (Osaka JPX) Deguchi Takashi (Shiga JPX) Takayama Ryoichi (Osaka JPX) Hirao Takashi (Osaka JPX), Method and apparatus for fabrication of dielectric thin film.
  204. Nevill Leland R., Method and apparatus for identifying integrated circuits.
  205. Yamashita Youji (Shizuoka JPX), Method and apparatus for manufacturing semi-insulation GaAs monocrystal.
  206. Joshi Abhay M. (Plainsboro NJ), Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy.
  207. Falk Robert A. (Louisville CO) Phillis Gary L. (Boulder CO), Method and apparatus for optically measuring distance and velocity.
  208. Smith Doran D. (Brick NJ), Method and apparatus for performing internal device structure analysis of a dual channel transistor by multiple-frequenc.
  209. H. Sprague Ackley, Method and apparatus for utilizing specular light to image low contrast symbols.
  210. Haartsen Jacobus,SEX, Method and arrangement for radio communication.
  211. Cook Robert K. (Poughkeepsie) Knepper Ronald W. (Lagrangeville) Kulkarni Subodh K. (Fishkill) Lange Russell C. (Newburgh) Ronsheim Paul A. (Wappingers Falls) Subbanna Seshadri (Hopewell Junction) Tej, Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface.
  212. Jewell Jack L., Method for fabricating a semiconductor device.
  213. Yi Zhiyi ; Droopad Ravindranath ; Overgaard Corey Daniel ; Ramdani Jamal ; Curless Jay A. ; Hallmark Jerald A. ; Ooms William J. ; Wang Jun, Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.
  214. Yu Zhiyi ; Droopad Ravindranath ; Overgaard Corey Daniel ; Ramdani Jamal ; Curless Jay A. ; Hallmark Jerald A. ; Ooms William J. ; Wang Jun, Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.
  215. Yu Zhiyi ; Wang Jun ; Droopad Ravindranath ; Ramdani Jamal, Method for fabricating a semiconductor structure having a stable crystalline interface with silicon.
  216. Lebby Michael S. (Chandler AZ) Norman Michael P. (Chandler AZ), Method for fabricating an angled diffraction grating.
  217. Lee Ming-Tsan,TWX ; Liu Chuan H.,TWX ; Fu Kuan-Yu,TWX, Method for fabricating an oxide layer on silicon with carbon ions introduced at the silicon/oxide interface in order to reduce hot carrier effects.
  218. So Sang Mun,KRX, Method for fabricating silicon-on-insulator wafer.
  219. Ek Bruce Allen (Pelham Manor NY) Gates Stephen McConnell (Ossining NY) Guarin Fernando Jose (Millbrook NY) Iyer Subramanian Srikanteswara (Yorktown Heights NY) Powell Adrian Roger (Brookfield CT), Method for forming a single crystal semiconductor on a substrate.
  220. Ota Yorito,JPX ; Masato Hiroyuki,JPX ; Kumabuchi Yasuhito,JPX ; Kitabatake Makoto,JPX, Method for forming an ohmic electrode.
  221. Bojarczuk, Jr., Nestor A.; Cartier, Eduard A.; Copel, Matthew W.; Guha, Supratik, Method for forming dielectric stack without interfacial layer.
  222. Yano Yoshihiko,JPX ; Noguchi Takao,JPX ; Nagano Katsuto,JPX, Method for forming oxide thin film and the treatment of silicon substrate.
  223. Nakato Tatsuo, Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant.
  224. McGinn Joseph T. (Flemington NJ) Jastrzebski Lubomir L. (Plainsboro NJ) Corboy ; Jr. John F. (Ringoes NJ), Method for growing a low defect monocrystalline layer on a mask.
  225. Yanjun Ma ; Yoshi Ono, Method for improving electrical properties of high dielectric constant films.
  226. Guldi Richard L. (Dallas TX), Method for improving gate oxide integrity using low temperature oxidation during source/drain anneal.
  227. Ooms William J. ; Marshall Daniel S. ; Hallmark Jerald A., Method for making a ferroelectric semiconductor device and a layered structure.
  228. Suh Jeong-Dae,KRX ; Sung Gun-Yong,KRX, Method for making a superconducting field-effect device with grain boundary channel.
  229. Feit Zeev (Brookline MA) Kostyk Douglas (Billerica MA) Woods Robert J. (Burlington MA), Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays.
  230. Hong Qiu CN; Koji Sumi JP; Tsutomu Nishiwaki JP; Masanori Okuyama JP; Zhiqiang Wei JP, Method for manufacturing piezoelectric material.
  231. Hbert Francois (Sunnyvale CA), Method for producing a fully walled emitter-base structure in a bipolar transistor.
  232. Hasegawa, Shinichi; Fujita, Hisanori, Method for producing mixed crystal wafer using special temperature control for preliminary gradient and constant layer deposition suitable for fabricating light-emitting diode.
  233. Ichikawa Takeshi (Zama JPX) Yonehara Takao (Atsugi JPX) Sakamoto Masaru (Atsugi JPX) Naruse Yasuhiro (Aiko JPX) Nakayama Jun (Atsugi JPX) Yamagata Kenji (Kawasaki JPX) Sakaguchi Kiyofumi (Atsugi JPX), Method for producing semiconductor articles.
  234. Sakaguchi Kiyofumi (c/o Canon Kabushiki Kaisha 30-2 ; 3-chome Shimomaruko ; Ohta-ku ; Tokyo JPX) Yonehara Takao (c/o Canon Kabushiki Kaisha 30-2 ; 3-chome Shimomaruko ; Ohta-ku ; Tokyo JPX) Nishida S, Method for producing semiconductor device substrate by bonding a porous layer and an amorphous layer.
  235. Bisaro Ren (Saint Maur des Fosses FRX) Friederich Alain (Paris FRX), Method for the manufacture, by epitaxy, of monocrystalline layers of materials with different lattice parameters.
  236. Goesele Ulrich M. ; Tong Qin-Yi, Method for the transfer of thin layers monocrystalline material onto a desirable substrate.
  237. Sugiyama Haruo,JPX ; Inoue Kazushi,JPX, Method of detecting solid cancer cells and tissue atypia and method of testing tissues for use in bone marrow transplantation and peripheral blood stem cell transplantation.
  238. Shastry Shambhu K. (Framingham MA), Method of epitaxially growing compound semiconductor materials.
  239. Kizuki Hirotaka,JPX, Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface.
  240. Ramdani Jamal ; Droopad Ravindranath ; Yu Zhiyi, Method of fabricating a semiconductor structure including a metal oxide interface.
  241. Summerfelt Scott R. (Dallas TX), Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer.
  242. Cambou Bertrand F. (Mesa AZ) Liaw H. Ming (Scottsdale AZ) Tomozane Mamoru (Scottsdale AZ), Method of fabricating integrated silicon and non-silicon semiconductor devices.
  243. Abrokwah Jonathan K. ; Droopad Ravi ; Overgaard Corey D. ; Bowers Brian ; LaMacchia Michael P. ; Bernhardt Bruce A., Method of fabricating submicron FETs with low temperature group III-V material.
  244. Kanber Hilda (Rolling Hills Estates CA), Method of fabricating three dimensional gallium arsenide microelectronic device.
  245. Bevan Malcolm J. ; Shih Hung-Dah, Method of forming a cadmium telluride/silicon structure.
  246. Itoh Kenji (Kanagawa JPX), Method of forming a carbon film on a substrate made of an oxide material.
  247. Hata Tomonobu,JPX ; Sasaki Kimihiro,JPX ; Kamisawa Akira,JPX, Method of forming a crystalline insulation layer on a silicon substrate.
  248. Eshita Takashi (Inagi JPX) Mieno Fumitake (Kawasaki JPX) Furumura Yuji (Kawasaki JPX) Watanabe Takuya (Sagamihara JPX), Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers.
  249. Mooney John B. (San Jose CA) Sher Arden (San Carlos CA), Method of forming a low dislocation density semiconductor device.
  250. Seon Jeong-Min,KRX ; Kim Hwan-Myeong,KRX, Method of forming a perovskite structure semiconductor capacitor.
  251. Seon Jeong-Min,KRX ; Kim Hwan-Myeong,KRX, Method of forming a perovskite structure semiconductor capacitor.
  252. Droopad Ravi ; Abrokwah Jonathan K. ; Passlack Matthias ; Yu Zhiyi Jimmy, Method of forming a silicon nitride layer.
  253. Liu Bill Yowjuang ; Besser Paul R., Method of forming cobalt silicide.
  254. Kawahara Takaaki,JPX ; Yamamuka Mikio,JPX ; Horikawa Tsuyoshi,JPX ; Tarutani Masayoshi,JPX ; Sato Takehiko,JPX ; Matsuno Shigeru,JPX, Method of forming high dielectric constant thin film and method of manufacturing semiconductor device.
  255. Seabaugh Alan C. ; Kao Yung Chung ; Purdes Andrew J. ; Randall John N., Method of forming lateral resonant tunneling devices.
  256. Belt Roger F. (Morristown NJ) Ings John B. (Boonton NJ), Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystallin.
  257. Inoue Yasunori (Osaka JPX) Hanafusa Hiroshi (Hirakata JPX), Method of forming single crystalline magnesia spinel film.
  258. Pessa Markus (Tampere FIX) Asonen Harry (Tampere FIX) Varrio Jukka (Tampere FIX) Salokatve Arto (Tampere FIX), Method of growing GaAs films on Si or GaAs substrates using ale.
  259. Ramdani Jamal ; Lebby Michael S. ; Holm Paige M., Method of growing gallium nitride on a spinel substrate.
  260. Wilk Glen D. ; Anthony John M., Method of growing high-quality crystalline silicon quantum wells for RTD structures.
  261. Kiyoku Hiroyuki,JPX ; Nakamura Shuji,JPX ; Kozaki Tokuya,JPX ; Iwasa Naruhito,JPX ; Chocho Kazuyuki,JPX, Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device.
  262. Pitt Gillies D. (Saffron Walden GB2) Greene Peter D. (Harlow GB2) Thrush Edward J. (Stansted Mountfitchet GB2) Whysall David H. (Harlow GB2), Method of making a Hall effect device.
  263. Abrokwah Jonathan K. (Tempe AZ) Huang Jenn-Hwa (Gilbert AZ) Ooms William J. (Chandler AZ), Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts.
  264. Miyagaki Shinji,JPX ; Eshita Takashi,JPX ; Ohkubo Satoshi,JPX ; Takai Kazuaki,JPX, Method of making a device having a heteroepitaxial substrate.
  265. Calviello Joseph A. (Kings Park NY) Hickman Grayce A. (Hicksville NY), Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substr.
  266. Kondo Makoto (Kawasaki JPX) Anayama Chikashi (Kawasaki JPX) Shoji Hajime (Kawasaki JPX), Method of making a semiconductor device utilizing crystal orientation dependence of impurity concentration.
  267. Umeno Masayoshi (Nagoya JPX) Sakai Shiro (Nagoya JPX) Yahagi Shinichiro (Ohbu JPX), Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice.
  268. Tsu Robert ; Kulwicki Bernard M., Method of making barium strontium titanate (BST) thin film by erbium donor doping.
  269. Abrokwah Jonathan K. (1963 E. Ranch Rd. Tempe AZ 85284) Huang Jenn-Hwa (1426 W. Tara Dr. Gilbert AZ 85234) Cho Jaeshin (507 E. Page Ave. Gilbert AZ 85234), Method of making ohmic contacts to a complementary III-V semiconductor device.
  270. Binkley Edward S. ; Nurse James C., Method of making optical interconnects with hybrid construction.
  271. Shichijo Hisashi (Garland TX), Method of making planarized heterostructures using selective epitaxial growth.
  272. Cozzette Stephen N. (Hightstown NJ) Davis Graham (Plainsboro NJ) Itak Jeanne (Hamilton NJ) Lauks Imants R. (Yardley PA) Mier Randall M. (Ottawa NJ CAX) Piznik Sylvia (Jackson NJ) Smit Nicolaas (Hight, Method of manufacturing a plurality of uniform microfabricated sensing devices having an immobilized ligand receptor.
  273. Murakami Toshiaki (Mito JPX) Moriwaki Kazuyuki (Mito JPX), Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film.
  274. Barber Ivor G., Method of packaging integrated circuits.
  275. Yu Zhiyi Jimmy ; Overgaard Corey D. ; Droopad Ravi ; Abrokwah Jonathan K. ; Hallmark Jerald A., Method of passivating the surface of a Si substrate.
  276. Takeda Toshikazu (Nagaokakyo JPX) Ogiso Yoshifumi (Nagaokakyo JPX) Nakagawa Takuji (Nagaokakyo JPX) Senda Atsuo (Nagaokakyo JPX), Method of preparing InSb thin film.
  277. Yu Zhiyi Jimmy ; Hallmark Jerald A. ; Abrokwah Jonathan K. ; Overgaard Corey D. ; Droopad Ravi, Method of preparing crystalline alkaline earth metal oxides on a Si substrate.
  278. Newman Nathan (Montara CA) Kapitulnik Aharon (Palo Alto CA) Cole Brady F. (Sunnyvale CA) Simon Randy W. (Belmont CA), Method of preparing high temperature superconductor films on opposite sides of a substrate.
  279. Mantl Siegfried,DEX ; Hollander Bernd,DEX ; Butz Rainer,DEX, Method of producing electronic, electrooptical and optical components.
  280. Ohno Hirotaka (Tenri JPX) Matsunaga Hironori (Tenri JPX) Okamoto Yasunari (Nara JPX) Nakajima Yoshiharu (Nara JPX), Method of producing ferroelectric LiNb1-31 xTaxO30 상세보기
  • Kroon Simon G. (Stadskanaal NLX), Method of treating a monocrystalline body utilizing a measuring member consisting of a monocrystalline layer and an adjo.
  • Mirkarimi Paul B. ; Montcalm Claude, Method to adjust multilayer film stress induced deformation of optics.
  • Travis Johnson ; John McGowen ; Allyson Beuhler ; Charles Kimball Brush ; Robert Emil Lajos, Methods and compositions for attachment of biomolecules to solid supports, hydrogels, and hydrogel arrays.
  • Lo Yu-Hwa, Methods for growing defect-free heteroepitaxial layers.
  • Linthicum Kevin J. ; Gehrke Thomas ; Davis Robert F. ; Thomson Darren B. ; Tracy Kieran M., Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby.
  • Manning H. Montgomery, Methods of forming SOI insulator layers and methods of forming transistor devices.
  • Ho Seng-Tiong ; Chu Daniel Yen ; Zhang Jian-Ping ; Wu Shengli, Microcavity semiconductor laser.
  • Ramoothy Ramesh ; Yu Wang ; Jeffrey M. Finder ; Kurt Eisenbeiser ; Zhiyi Yu ; Ravindranath Droopad, Microelectronic piezoelectric structure and method of forming the same.
  • Hazelrigg ; Jr. George A. (4623 N. 4th Rd. Arlington VA 22203), Micromechanical/microelectromechanical identification devices and methods of fabrication and encoding thereof.
  • Honjo Kazuhiko (Tokyo JPX), Microwave . millimeter wave transmitting and receiving module.
  • Krishnaswamy S. Visvanathan (Monroeville PA) Horwitz Stuart S. (Randallstown MD) Moore Robert A. (Arnold MD), Microwave film bulk acoustic resonator and manifolded filter bank.
  • Schaefer Stephen R. (Carlsbad CA) Bechtel James H. (San Diego CA), Modular micro-optical systems and method of making such systems.
  • Buchan Nicholas I. (Danbury CT) Heuberger Willi (Richterswil CHX) Roentgen Peter (Thalwil CHX), Modulated strain heterostructure light emitting device.
  • Tsuzuki Koji,JPX ; Murakami Tsutomu,JPX ; Yamada Satoru,JPX ; Takeyama Yoshifumi,JPX ; Shimizu Koichi,JPX, Moldless semiconductor device and photovoltaic device module making use of the same.
  • Calviello Joseph A. (Kings Park NY) Hickman Grayce A. (Hicksville NY), Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate.
  • Choi Hong K. (Concord MA) Tsaur Bor-Yeu (Bedford MA) Turner George W. (Chelmsford MA), Monolithic integration of silicon and gallium arsenide devices.
  • Vasudev Prahalad (290 Autumnwood St. Thousand Oaks CA 91360) D\Haenens Irnee J. (131 Paradise Cove Malibu CA 90265), Monolithic integration of silicon on insulator and gallium arsenide semiconductor technologies.
  • Macdonald Perry A. (Culver City CA) Larson Lawrence E. (Bethesda MD) Case Michael G. (Thousand Oaks CA) Matloubian Mehran (Encino CA) Chen Mary Y. (Agoura CA) Rensch David B. (Thousand Oaks CA), Monolithic microwave integrated circuit and method.
  • Stockton Ronald J. (Nederland CO) Munson Robert E. (Boulder CO), Monolithic microwave integrated circuit with integral array antenna.
  • Bayraktaroglu Burhan (Plano TX), Monolithic microwave transmitter/receiver.
  • Krause Robert, Monolithic optical emitter-detector.
  • Thornton Robert L. (East Palo Alto CA) Paoli Thomas L. (Los Altos CA), Monolithic two dimensional waveguide coupled cavity laser/modulator.
  • Rostoker Michael D. (San Jose CA), Multi-chip semiconductor arrangements using flip chip dies.
  • Sevier Richard G. ; Andersen Eric L., Multi-direction optical data port.
  • Wong Thomas T. Y., Multi-function interactive communications system with circularly/elliptically polarized signal transmission and reception.
  • Horiuchi Masatada (Koganei JPX) Onai Takahiro (Ome JPX) Washio Katsuyoshi (Tokorozawa JPX), Multi-layered structure having single crystalline semiconductor film formed on insulator.
  • Corman David Warren ; Torkington Richard Scott ; Ma Stephen Chih-Hung ; Cook Dean Lawrence ; Brice-Heames Kenneth, Multi-substrate radio-frequency circuit.
  • Richard R. King ; Nasser H. Karam ; Moran Haddad, Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications.
  • Curran Patrick A. (Plano TX) Wilson Susan R. (Richardson TX), Multilayer semi-insulating film for hermetic wafer passivation and method for making same.
  • Yano Yoshihiko,JPX ; Noguchi Takao,JPX, Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film.
  • Yano Yoshihiko,JPX ; Noguchi Takao,JPX, Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film.
  • Hovel Harold J. (Katonah NY), Multiple bandgap solar cell on transparent substrate.
  • Hawrylo Frank Z. (Trenton NJ), Multiple double heterojunction buried laser device.
  • Chaum ; Erik, Multiple path configuration for a laser interferometer.
  • Woeste Dana Marie ; Strom James David ; Rudolph Bruce George, Multiple-mode clock distribution apparatus and method with adaptive skew compensation.
  • Collins Douglas A. ; McGill Thomas C. ; Papa George O., Near real-time extraction of deposition and pre-deposition characteristics from rotating substrates and control of a de.
  • Yamamoto Mitsuru,JPX, Network system for performing bidirectional transmission, and node device and transmission control method used in the s.
  • Verkade John G. (Ames IA), New types of organometallic reagents and catalysts for asymmetric synthesis.
  • Imai Hideaki (Fuji JPX) Miyata Kunio (Kyoto JPX) Hirai Tadahiko (Koganei JPX), Nitride based semiconductor device and manufacture thereof.
  • Nakamura Shuji,JPX ; Nagahama Shinichi,JPX ; Iwasa Naruhito,JPX ; Kiyoku Hiroyuki,JPX, Nitride semiconductor light-emitting device.
  • Nunoue Shinya,JPX ; Yamamoto Masahiro,JPX, Nitride-compound semiconductor device.
  • Cambou Bertrand F. (Mesa AZ) Liaw H. Ming (Scottsdale AZ) Tomozane Mamoru (Scottsdale AZ), Non-silicon and silicon bonded structure and method of manufacture.
  • Endo Nobuhiro (Tokyo JPX), Non-volatile semiconductor memory device having a metal-insulator-semiconductor gate structure and method for fabricatin.
  • Kawakubo Takashi,JPX ; Abe Kazuhide,JPX, Nonvolatile semiconductor memory device and method for manufacturing same.
  • Stoner Brian R. (Raleigh NC) Glass Jeffrey T. (Apex NC) Hooke William M. (Chapel Hill NC) Williams Bradley E. (Worthington OH), Nucleation enhancement for chemical vapor deposition of diamond.
  • James A. Benjamin ; Joseph F. Camerlin ; David M. Cooper, Null elimination in a space diversity antenna system.
  • Grudkowski Thomas W. (Glastonbury CT) Cullen Donald E. (Manchester CT), Nyquist frequency bandwidth hact memory.
  • Mehrgardt Soenke (March-Meuershausen DEX) Blossfeld Lothar (Freiburg-Hochdorf DEX), Offset-compensated hall sensor having plural hall detectors having different geometrical orientations and having switcha.
  • Nashimoto Keiichi,JPX ; Watanabe Masao,JPX ; Moriyama Hiroaki,JPX ; Nakamura Shigetoshi,JPX ; Osakabe Eisuke,JPX ; Morikawa Takashi,JPX, Opical waveguide device.
  • Vasudev Prahalad K. (Santa Monica CA), Opposed dual-gate hybrid structure for three-dimensional integrated circuits.
  • Holder James D. (Huntsville AL), Optic-coupled integrated circuits.
  • Van De Voorde Ingrid Zulma Benoit,BEX ; Van Der Plas Gert,BEX, Optical amplifier combiner arrangement and method for upstream transmission realized thereby.
  • May Paul (Cambridge GBX) Davis Gillian Margaret (Oxfordshire GBX), Optical apparatus.
  • Butler Michael A. ; Ricco Antonio J. ; Sinclair Michael B. ; Senturia Stephen D., Optical apparatus for forming correlation spectrometers and optical processors.
  • Wu Kuang-Yi ; Liu Jian-Yu ; Chen Yen-Chen,TWX, Optical attenuator using polarization modulation and a feedback controller.
  • Giles Clinton R. (Middletown NJ) Li Tingye (Rumson NJ) Wood Thomas H. (Highlands NJ), Optical communication by injection-locking to a signal which modulates an optical carrier.
  • Ho Steven H. (Urbana IL) Conforti Evandro (Campinas BRX) Kang Sung M. (Champaign IL), Optical communications and interconnection networks having opto-electronic switches and direct optical routers.
  • Gaw Craig A. (Scottsdale AZ) Shieh Chan-Long (Paradise Valley AZ) Lebby Michael S. (Apache Junction AZ), Optical coupler.
  • Murray Dale D. (Mount Joy PA) Reitz Paul R. (Palmyra PA), Optical delay switch and variable delay system.
  • Chandonnet Alain,CAX ; Fougeres Andre,CAX ; Larose Gilles,CAX ; Painchaud Yves,CAX, Optical device employing edge-coupled waveguide geometry.
  • Doi Masato (Kanagawa JPX) Narui Hironobu (Kanagawa JPX) Matsuda Osamu (Kanagawa JPX) Sahara Kenji (Kanagawa JPX), Optical device having a light emitter and a photosensor on the same optical axis.
  • Maruska H. Paul (Acton MA), Optical heterodyne receiver for fiber optic communications system.
  • Yoshida Yoshio (Nara JPX) Kurata Yukio (Tenri JPX) Tsuji Shigeki (Higashihiroshima JPX), Optical information reproducing apparatus.
  • Levi Anthony F. J. (Summit NJ) McCall Samuel L. (Chatham NJ) Slusher Richart E. (Lebanon NJ), Optical integrated circuit designed to operate by use of photons.
  • Ohya Jun (Osaka JPX) Matsui Yasushi (Suita JPX), Optical integrated circuit for heterodyne detection.
  • Okada Kuniaki (Tenri JPX) Minami Kouji (Gose JPX) Miki Renzaburo (Tenri JPX) Yamamoto Hiroyuki (Tenri JPX) Yoshida Yoshio (Nara JPX) Kurata Yukio (Tenri JPX), Optical integrated circuit having light detector.
  • Ota Takeshi (Kanagawa JPX), Optical link amplifier and a wavelength multiplex laser oscillator.
  • Wisseman Philip Henry ; Shih Chung-Ching, Optical loop signal processing using reflection mechanisms.
  • Henmi Naoya,JPX, Optical network, optical division and insertion node and recovery system from network failure.
  • Frigo Nicholas J., Optical node system for a ring architecture and method thereof.
  • Yano Yutaka,JPX, Optical regenerative repeater.
  • O'Brien Stephen ; Zhao Hanmin ; Major ; Jr. Jo S., Optical semiconductor device with diffraction grating structure.
  • Gorecki Christophe,FRX, Optical sensor on a silicon substrate and application for the in situ measurement of a fluorescent marker in the small bronchia.
  • Matsuda Manabu (Kawasaki JPX), Optical switching device.
  • Tohyama Masaki (Souka JPX) Suzuki Nobuo (Tokyo JPX), Optical transmission apparatus.
  • Nashimoto Keiichi,JPX ; Haga Koichi,JPX ; Watanabe Masao,JPX ; Moriyama Hiroaki,JPX ; Morikawa Takashi,JPX ; Nakamura Shigetoshi,JPX, Optical waveguide device and manufacturing method thereof.
  • Hunsperger Robert G. (Newark DE) Maltenfort Andrew J. (New Castle DE), Optical wavelength division multiplexing/demultiplexing system.
  • Takehito Tsukamoto JP; Koichi Kumai JP; Takao Minato JP; Shigeru Hirayama JP; Masayuki Ode JP, Optical wiring layer, optoelectric wiring substrate, mounted substrate, and methods for manufacturing the same.
  • Tsubota Takashi (Tokyo JPX), Opto-semiconductor device and method of fabrication of the same.
  • Conley Jerry J. (Waseca MN), Optoelectronic active circuit element.
  • Mozer Albrecht (Bietigheim-Bissingen DEX), Optoelectronic arrangement.
  • Verdiell Jean-Marc, Optoelectronic assembly and method of making the same.
  • Hammer Jacob M. (Princeton NJ), Optoelectronic interconnections for integrated circuits.
  • Jean-Luc Goudard FR, Optoelectronic module and method for stabilizing its temperature.
  • Idaka Yukio (Nara JPX) Yamaguchi Shuichiroh (Hirakata JPX) Matsumoto Takeshi (Neyagawa JPX), Optoelectronic relay circuit having charging path formed by a switching transistor and a rectifying diode.
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    AI-Helper 아이콘
    AI-Helper
    안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
    ※ AI-Helper는 부적절한 답변을 할 수 있습니다.

    선택된 텍스트