Multiple stage electroless deposition of a metal layer
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/44
H01L-021/02
출원번호
US-0744119
(2003-12-22)
발명자
/ 주소
Cheng,Chin Chang
Dubin,Valery M.
출원인 / 주소
Intel Corporation
대리인 / 주소
Blakely, Sokoloff, Taylor and Zafman
인용정보
피인용 횟수 :
22인용 특허 :
4
초록▼
A multiple stage method of electrolessly depositing a metal layer is presented. This method may have the two main stages of first forming a thin metal layer on a metal surface using an electroless plating solution containing activating agents that are highly reactive reducing agents, and second, for
A multiple stage method of electrolessly depositing a metal layer is presented. This method may have the two main stages of first forming a thin metal layer on a metal surface using an electroless plating solution containing activating agents that are highly reactive reducing agents, and second, forming a bulk metal layer over the thin metal layer by using an electroless plating solution containing mildly reactive reducing agents. Through this two stage method, the use of highly reactive reducing agents that may cause the formation of contaminant particles may be minimized. By minimizing the formation of contaminant particles in the electroless plating solution, the lifetime of the solution may be extended and the current leakage between metal interconnect lines may be reduced.
대표청구항▼
We claim: 1. A method, comprising: applying a first electroless metal plating solution to a metal surface to form a first metal film, the first electroless metal plating solution comprising a highly reactive reducing agent capable of being catalyzed by the metal surface at temperatures less than 50
We claim: 1. A method, comprising: applying a first electroless metal plating solution to a metal surface to form a first metal film, the first electroless metal plating solution comprising a highly reactive reducing agent capable of being catalyzed by the metal surface at temperatures less than 50째 C.; and applying a second electroless metal plating solution to form a second metal film, wherein the second electroless metal plating solution does not contain a reducing agent capable of being catalyzed by the metal surface at temperatures less than 50째 C. 2. The method of claim 1, wherein the first reducing agent comprises dimethylaminoborane. 3. The method of claim 1, wherein the first reducing agent comprises borohydrate. 4. The method of claim 1, wherein the second electroless metal plating solution comprises a second reducing agent incapable of being catalyzed by the metal surface at temperatures less than 50째 C. 5. The method of claim 4, wherein the second reducing agent comprises hypophosphite. 6. The method of claim 4, wherein the second reducing agent comprises formaldehyde. 7. The method of claim 1, wherein the metal surface is copper. 8. The method of claim 1, wherein the first metal film has a thickness of less than approximately 50 Å. 9. The method of claim 1, wherein the second metal film has a thickness in the approximate range of 50 Å and 500 Å. 10. The method of claim 1, wherein applying the first electroless metal plating solution comprises spraying. 11. The method of claim 10, wherein spraying comprises a flow rate of the first electroless solution of approximately 10-200 ml/min for a time sufficient to coat a wafer comprising the metal surface. 12. The method of claim 10, wherein spraying comprises a flow rate of the first solution of approximately 100 ml/min for approximately 20 seconds to coat a wafer comprising the metal surface. 13. The method of claim 1, wherein applying the second electroless plating solution comprises immersing the metal surface in the second electroless plating solution. 14. The method of claim 13, wherein the metal surface is immersed in the second electroless plating solution for a time in the approximate range of 0.5 minutes and 5.0 minutes. 15. The method of claim 1, further comprising rinsing the metal surface with a rinse solution to remove the first electroless solution from the metal surface after applying the first electroless solution. 16. The method of claim 15, wherein the rinse solution comprises water. 17. The method of claim 15, wherein the rinsing comprises spraying the rinse solution onto the metal surface for a time sufficient to remove the first electroless solution from the metal surface. 18. The method of claim 1, further comprising cleaning the metal surface to remove chemical mechanical polishing residues before applying the first electroless metal plating solution. 19. The method of claim 1, further comprising cleaning the second metal film to remove impurities after applying the second electroless metal plating solution. 20. A method comprising: spraying a first electroless cobalt plating solution onto a copper interconnect to form a first cobalt film having a thickness of less than 50 Å, the first electroless cobalt plating solution comprising a highly reactive reducing agent capable of being catalyzed by the metal surface at temperatures less than 50째 C. comprising dimethylaminoborane; and immersing the copper interconnect into a second electroless cobalt plating solution to form a bulk cobalt layer having a thickness of approximately 150 Å, the second electroless cobalt plating solution not containing a highly reactive reducing agent capable of being catalyzed by the metal surface at temperatures less than 50째 C. 21. The method of claim 20, wherein the second electroless cobalt plating solution comprises a mildly reactive reducing agent comprising hypophosphite. 22. The method of claim 20, further comprising rinsing the copper interconnect after spraying the first electroless cobalt solution onto the copper interconnect to remove the first electroless cobalt solution from the copper interconnect. 23. A method, comprising: reducing shorting between metal interconnect lines by minimizing the use of a highly reactive reducing agent capable of being catalyzed by the metal surface at temperatures less than 50째 C. to deposit a metal capping layer on the metal interconnect line. 24. The method of claim 23, wherein the metal capping layer comprises cobalt. 25. The method of claim 23, wherein minimizing the use of contaminant forming reducing agents extends a lifetime of an electroless plating bath. 26. The method of claim 25, wherein the lifetime of the electroless plating bath is extended by more than 1 month over a lifetime of an electroless plating bath that does not minimize the use of contaminant particle forming agents.
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