IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0491432
(2002-10-22)
|
우선권정보 |
JP-2001-327194(2001-10-25) |
국제출원번호 |
PCT/JP02/010968
(2002-10-22)
|
§371/§102 date |
20040412
(20040412)
|
국제공개번호 |
WO03/036694
(2003-05-01)
|
발명자
/ 주소 |
- Shinya,Hiroshi
- Souma,Yasutaka
- Kitano,Takahiro
|
출원인 / 주소 |
|
대리인 / 주소 |
Oblon, Spivak, McClelland, Maier &
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인용정보 |
피인용 횟수 :
0 인용 특허 :
5 |
초록
▼
A heat treatment apparatus configured to perform heat treatment on a wafer having a surface on which a coating film is formed, and includes: a holding member for holding the wafer almost horizontally; a chamber for housing the wafer held by the holding member; a hot plate having gas permeability and
A heat treatment apparatus configured to perform heat treatment on a wafer having a surface on which a coating film is formed, and includes: a holding member for holding the wafer almost horizontally; a chamber for housing the wafer held by the holding member; a hot plate having gas permeability and disposed above the wafer held by the holding member in the chamber so that the coating film formed on the wafer can be directly heated; and an exhaust port provided on the top face of the chamber and exhausting gas in the chamber. Gas generated from the coating film passes through the hot plate and is exhausted from the chamber. Accordingly, uniformity of a coating film is improved. As a result, CD uniformity may be improved, LER characteristics may be improved, and a smooth pattern side face may be obtained.
대표청구항
▼
What is claimed is: 1. A heat treatment apparatus for performing heat treatment on a wafer having a surface on which a coating film is formed, comprising: a chamber for housing the wafer, including a fixed upper vessel and a vertically movable lower vessel; a supporting pin fixed to said lower vess
What is claimed is: 1. A heat treatment apparatus for performing heat treatment on a wafer having a surface on which a coating film is formed, comprising: a chamber for housing the wafer, including a fixed upper vessel and a vertically movable lower vessel; a supporting pin fixed to said lower vessel and holding said wafer substantially horizontally; a hot plate disposed above the wafer held by said supporting pin in said chamber so that the coating film formed on said wafer can be directly heated; an exhaust port provided in said upper vessel of said chamber and exhausting gas in said chamber, and a wafer transferring member configured to support said wafer and provided to penetrate a bottom wall of said lower vessel so as to pass the supported wafer to said supporting pin when said lower vessel is lifted and so as to receive the wafer from said supporting pin when said lower vessel is lowered; wherein a gap having a predetermined width is provided between an end face of said hot plate and an inner wall face of said chamber, the gas in said chamber is exhausted from said exhaust port, thereby holding the inside of said chamber in a predetermined pressure-reduced atmosphere, and gas generated from said coating film when said coating film is heated by said hot plate passes through said gap and is exhausted to the outside of said chamber. 2. The heat treatment apparatus according to claim 1, wherein said coating film is a resist film formed by coating a resist solution on the wafer. 3. The heat treatment apparatus according to claim 1, further comprising: means for supplying air into said chamber. 4. The heat treatment apparatus according to claim 3, wherein said coating film is a resist film formed by coating the wafer with a resist solution, and the means for supplying air into said chamber has means for making steam of a solvent of the resist to be included in the air at an almost saturated vapor pressure. 5. A heat treatment apparatus for performing heat treatment on a wafer having a surface on which a coating film is formed, comprising: a holding member for holding said wafer substantially horizontally; a chamber for housing the wafer held by said holding member; a hot plate having gas permeability and disposed above the wafer held by said holding member in said chamber so that the coating film formed on said wafer can be directly heated; and an exhaust port provided on the top face of said chamber and exhausting gas in said chamber, wherein gas generated from said coating film when said coating film is heated by said hot plate passes through said hot plate and is exhausted to the outside of said chamber. 6. The heat treatment apparatus according to claim 5, wherein said coating film is a resist film formed by coating a resist solution on the wafer. 7. The heat treatment apparatus according to claim 5, wherein a plurality of through holes penetrating said hot plate in the vertical direction is provided in said hot plate. 8. The heat treatment apparatus according to claim 5, wherein said hot plate is made of a porous material having permeability. 9. The heat treatment apparatus according to claim 5, wherein an exhaust adjusting plate in which holes are provided in predetermined positions is provided between said hot plate and the top face of said chamber so that said gas uniformly passes through the whole surface of said hot plate. 10. The heat treatment apparatus according to claim 5, wherein said chamber has a fixed upper vessel and a vertically-movable lower vessel, said holding member is fixed to said lower vessel and said exhaust port is provided in said upper vessel, and the apparatus further comprises a wafer transferring member configured to support said wafer and is provided to penetrate a bottom wall of said lower vessel so as to pass the supported wafer to said holding member when said lower vessel is lifted and so as to receive the wafer from said holding member when said lower vessel is lowered. 11. The heat treatment apparatus according to claim 5, further comprising: means for supplying air into said chamber. 12. The heat treatment apparatus according to claim 11, wherein said coating film is a resist film formed by coating the wafer with a resist solution, and the means for supplying air into said chamber has means for making steam of a solvent of the resist to be included in the air at an almost saturated vapor pressure. 13. A heat treatment method comprising: a first step of forming a resist film by coating a wafer with a resist solution; a second step of holding said wafer on which the resist film is formed in a hermetically closed chamber; and a third step of disposing a hot plate having gas permeability in a predetermined position above said wafer on which the resist film is formed and, while heating said resist film by the hot plate, exhausting gas in said chamber so that gas evaporated from said resist film is exhausted by passing through said hot plate. 14. The heat treatment method according to claim 13, further comprising: a step of supplying air into said chamber. 15. The heat treatment method according to claim 13, further comprising: a step of supplying air including steam of a solvent of a resist at an almost saturated vapor pressure into said chamber. 16. A heat treatment method comprising: a first step of forming a resist film by coating a wafer with a resist solution; a second step of placing said wafer on which the resist film is formed on a wafer transferring member provided to penetrate a bottom wall of a vertically movable lower vessel in a chamber including a fixed upper vessel and said lower vessel and passing the wafer to a supporting pin provided in said lower vessel by lifting said lower vessel; a third step of supporting said wafer with said supporting pin after said second step, while heating said resist film, with said chamber being sealed, by a hot plate disposed in a predetermined position above said wafer on which said resist film is formed, exhausting gas in said chamber through an exhaust port provided in said upper vessel to hold said chamber in a predetermined pressure-reduced atmosphere, and exhausting gas evaporated from said resist film from said chamber through a gap having a predetermined width provided between an end face of said hot plate and an inner wall face of said chamber; and a fourth step of passing said wafer from said supporting pin to said transferring member by lowering said lower vessel. 17. The heat treatment method according to claim 16, further comprising: a step of supplying air into said chamber. 18. The heat treatment method according to claim 16, further comprising: a step of supplying air including steam of a solvent of a resist at an almost saturated vapor pressure into said chamber. 19. The heat treatment apparatus according to claim 1, further comprising a proximity pin for making a distance between said hot plate and said wafer constant and provided on an under face of said hot plate. 20. The heat treatment method according to claim 16, wherein said third step is performed in such a state that a distance between said hot plate and said wafer is maintained constant by a proximity pin provided on an under face of said hot plate.
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