Method of supercritical processing of a workpiece
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
C23C-016/00
출원번호
US-0346445
(2003-01-15)
발명자
/ 주소
Biberger,Maximilian Albert
Layman,Frederick Paul
Sutton,Thomas Robert
출원인 / 주소
Tokyo Electron Limited
대리인 / 주소
Haverstock &
인용정보
피인용 횟수 :
9인용 특허 :
288
초록▼
An apparatus for supercritical processing and non-supercritical processing of a workpiece comprises a transfer module, a supercritical processing module, a non-supercritical processing module, and a robot. The transfer module includes an entrance. The supercritical processing module and the non-supe
An apparatus for supercritical processing and non-supercritical processing of a workpiece comprises a transfer module, a supercritical processing module, a non-supercritical processing module, and a robot. The transfer module includes an entrance. The supercritical processing module and the non-supercritical processing module are coupled to the transfer module. The robot is preferably located within the transfer module. In operation, the robot transfers a workpiece from the entrance of the transfer module to the supercritical processing module. After supercritical processing, the robot then transfers workpiece from the supercritical processing module to the non-supercritical processing module. After the non-supercritical processing, the robot returns the workpiece to the entrance of the transfer module. Alternatively, the non-supercritical processing is performed before the supercritical processing.
대표청구항▼
We claim: 1. A method of supercritical processing of a first work-piece having a residue on a surface of the workpiece comprising the steps of: a. transferring the first workpiece from an entrance of a transfer module into the transfer module; b. transferring the first workpiece to a supercritical
We claim: 1. A method of supercritical processing of a first work-piece having a residue on a surface of the workpiece comprising the steps of: a. transferring the first workpiece from an entrance of a transfer module into the transfer module; b. transferring the first workpiece to a supercritical processing module having a workpiece cavity while maintaining the first workpiece in a clean environment, the step of transferring the first workpiece to the supercritical processing module comprising: i. transferring the first workpiece from the transfer module to an antechamber; ii. pressurizing the antechamber to a pressure above 1,000 psi; and iii. transferring the first workpiece from the antechamber to the workpiece cavity; c. processing the first workpiece in the workpiece cavity in a supercritical environment until at least a portion of the residue is removed from the surface of the workpiece, the workpiece cavity maintaining a substantially constant volume during processing; d. transferring the first workpiece to the non-supercritical processing module while maintaining the first workpiece in a clean environment; e. processing the first workpiece in the non-supercritical processing module; and f. returning the first workpiece to the entrance of the transfer module. 2. The method of claim 1 wherein the entrance of the transfer module comprises a hand-off station. 3. The method of claim 2 wherein the entrance of the transfer module further comprises an additional hand-off station. 4. The method of claim 1, wherein the step of processing the first workpiece in the supercritical processing module comprises: a. introducing a processing material into the supercritical processing module; and b. adjusting the processing material in the supercritical processing module to supercritical conditions. 5. The method of claim 4, wherein the processing material is carbon dioxide. 6. The method of claim 4, wherein the step of processing the first workpiece in the supercritical processing module comprises the steps of: a. generating supercritical conditions in the supercritical processing module; b. injecting a solvent into the supercritical processing module; c. circulating the processing material and solvent within the supercritical processing module; and d. exhausting a portion of the processing material and solvent from the supercritical processing module. 7. The method of claim 6, further comprising the step of holding the first workpiece stationary during the step of processing the first workpiece in the supercritical processing module. 8. The method of claim 6, further comprising the step of spinning the first workpiece during the step of processing the first workpiece in the supercritical processing module. 9. The method of claim 6, further comprising the steps of: a. adjusting the pressure within the supercritical processing module; and b. exhausting the processing material and the solvent from the supercritical processing module. 10. The method of claim 6, further comprising the steps of: a. introducing a rinse agent into the supercritical processing module; b. introducing the processing material into the supercritical processing module; c. circulating the processing material and the rinse agent within the supercritical processing module; and d. exhausting the processing material and the rinse agent from the supercritical processing module. 11. The method of claim 10, wherein the rinse agent is selected from the group consisting essentially of water, alcohol, acetone, and mixtures thereof. 12. The method of claim 11, wherein the alcohol is selected from the group consisting essentially of isopropyl alcohol, ethanol, and other low molecular weight alcohols. 13. The method of claim 1, further comprising the step of maintaining a slight positive pressure in the transfer module. 14. The method of claim 13, wherein the step of maintaining a slight positive pressure comprises injecting an inert gas into the transfer module. 15. The method of claim 14, wherein the inert gas is selected from the group consisting essentially of Ar, CO2, and N2 . 16. The method of claim 1, further comprising the step of maintaining a pressure approximately equal to the atmospheric pressure in the transfer module. 17. The method of claim 1, wherein the step of processing the first workpiece in the non-supercritical processing module comprises one of inspecting, aligning, etching, physical vapor depositing, chemical vapor depositing, electroplating, chemical mechanical planarizing, photolithography, ashing, and scrubbing. 18. The method of claim 1, further comprising processing a second workpiece in the non-supercritical processing module while the first workpiece is being processed in the workpiece cavity. 19. The method of claim 1, wherein the residue is one of a photoresist residue and an etch residue. 20. The method of claim 1, wherein a pressure within the wafer cavity exceeds 1,500 psi. 21. The method of claim 1, wherein the workpiece has a diameter larger than 8 inches.
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