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Layer transfer method 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/30
  • H01L-021/02
  • H01L-021/46
출원번호 US-0753172 (2004-01-06)
우선권정보 FR-0300764(2003-01-24)
발명자 / 주소
  • Bressot,S챕verine
  • Rayssac,Olivier
  • Aspar,Bernard
출원인 / 주소
  • S.O.I. Tec Silicon on Insulator Technologies S.A.
  • Commissariat ? l'Energie Atomique (CEA)
대리인 / 주소
    Winston &
인용정보 피인용 횟수 : 11  인용 특허 : 20

초록

The invention relates to a method of removing a peripheral zone of adhesive while using a layer of adhesive in the process of assembling and transferring a layer of material from a source substrate to a support substrate. The method is remarkable in that it includes bonding the two substrates togeth

대표청구항

What is claimed is: 1. A method for transferring a transferable layer of material onto a support substrate, the method comprising: joining a source substrate that includes a transferable layer to a support substrate that is to receive the transferable layer by depositing an adhesive onto a surface

이 특허에 인용된 특허 (20)

  1. Uchiyama, Kenji, Component mounting method and method of producing electro-optical device.
  2. Kazutaka Yanagita JP; Kazuaki Ohmi JP; Kiyofumi Sakaguchi JP; Hirokazu Kurisu JP, Composite member and separating method therefor, bonded substrate stack and separating method therefor, transfer method for transfer layer, and SOI substrate manufacturing method.
  3. Bernstein, Kerry; Geffken, Robert M.; Pricer, Wilbur D.; Stamper, Anthony K.; Voldman, Steven H., Integrated high-performance decoupling capacitor and heat sink.
  4. Chen Yong ; Wang Shih-Yuan, Method for detaching an epitaxial layer from one substrate and transferring it to another substrate.
  5. Bernard Aspar FR; Michel Bruel FR; Thierry Barge FR, Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element.
  6. Borenstein, Jeffrey T., Method for microfabricating structures using silicon-on-insulator material.
  7. Bruel Michel,FRX ; Aspar Bernard,FRX, Method for obtaining a thin film in particular semiconductor, comprising a protected ion zone and involving an ion implantation.
  8. Bernard Aspar FR; Michel Bruel FR; Claude Jaussaud FR; Chrystelle Lagahe FR, Method for producing a thin membrane and resulting structure with membrane.
  9. Sayyah Keyvan, Method for transferring semiconductor device layers to different substrates.
  10. Doyle, Brian S., Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer.
  11. Aspar, Bernard; Bruel, Michel; Poumeyrol, Thierry, Method of producing a thin layer of semiconductor material.
  12. Inoue, Satoshi; Shimoda, Tatsuya, Method of separating thin-film device, method of transferring thin-film device, thin-film device, active matrix substrate, and liquid crystal display device.
  13. Sullivan Gerard J. (Thousand Oaks CA) Szwed Mary K. (Huntington Beach CA) Chang Mau-Chung F. (Thousand Oaks CA), Method of transferring a thin film to an alternate substrate.
  14. Vladimir I. Vaganov, Methods for wafer to wafer bonding using microstructures.
  15. Sakaguchi, Kiyofumi; Yonehara, Takao; Nishida, Shoji; Yamagata, Kenji, Process for producing semiconductor article.
  16. Bruel Michel,FRX ; Poumeyrol Thierry,FRX, Process for the production of a structure having a thin semiconductor film on a substrate.
  17. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  18. Yukiko Iwasaki JP; Takao Yonehara JP; Shoji Nishida JP; Kiyofumi Sakaguchi JP; Noritaka Ukiyo JP, Production method of semiconductor base material and production method of solar cell.
  19. Yamauchi, Shoichi; Ohshima, Hisayoshi; Matsui, Masaki; Onoda, Kunihiro; Ooka, Tadao; Yamanaka, Akitoshi; Izumi, Toshifumi, Semiconductor substrate and method of manufacturing the same.
  20. Wong, William S.; Kneissl, Michael A., Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials.

이 특허를 인용한 특허 (11)

  1. Carre, Alain R. E.; Francois, Eric J. P.; Waku-Nsimba, Jean; Wondraczek, Katrin, Carrier for glass substrates.
  2. Carre, Alain Robert Emile; Garner, Sean Matthew; Waku-Nsimba, Jean, Debonding a glass substrate from carrier using ultrasonic wave.
  3. Meunier-Beillard, Philippe; Hijzen, Erwin; Donkers, Johannes J. T. M., Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby.
  4. Letertre, Fabrice, Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods.
  5. Letertre, Fabrice, Methods of fabricating semiconductor structures and devices with strained semiconductor material.
  6. Arena, Chantal, Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters.
  7. Arena, Chantal, Methods of fabricating semiconductor structures or devices using layers of semiconductor material having selected or controlled lattice parameters.
  8. Sadaka, Mariam; Aspar, Bernard; Blanchard, Chrystelle Lagahe, Methods of forming semiconductor structures including MEMS devices and integrated circuits on opposing sides of substrates, and related structures and devices.
  9. Qin, Shu; Zhang, Ming, Methods of processing units comprising crystalline materials, and methods of forming semiconductor-on-insulator constructions.
  10. Sinha, Nishant; Sandhu, Gurtej S.; Smythe, John, Semiconductor material manufacture.
  11. Letertre, Fabrice, Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer.
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