IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0825290
(2004-04-16)
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발명자
/ 주소 |
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출원인 / 주소 |
- Arima Optoelectronics Corp.
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
3 인용 특허 :
1 |
초록
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A new transparent conducting oxide (TCO), which can be expressed as AlxGa3-x-yIn5+ySn2-zO 16-2z; 0≦x<1, 0<y<3, 0≦z<2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni/Au tra
A new transparent conducting oxide (TCO), which can be expressed as AlxGa3-x-yIn5+ySn2-zO 16-2z; 0≦x<1, 0<y<3, 0≦z<2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni/Au transparent conducting layer in blue-green region, and the new Al2O3--Ga2O3--In2O 3--SnO2 system is able to increase the brightness at 1. 5˜2.5 time to compare to regular process. Furthermore, the new transparent conducting oxide thin film has the highest conductivity, which is better than the Ni/Au transparent conducting thin film.
대표청구항
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What is claimed is: 1. A light emitting diode, comprising: a transparent insulating substrate; a first conductivity type GaN as a first lower cladding layer directly over said transparent insulating substrate; an InGaN light-emitting layer directly over said lower cladding layer; a second conductiv
What is claimed is: 1. A light emitting diode, comprising: a transparent insulating substrate; a first conductivity type GaN as a first lower cladding layer directly over said transparent insulating substrate; an InGaN light-emitting layer directly over said lower cladding layer; a second conductivity type GaN as second upper cladding layer directly over said InGaN light-emitting layer; a GaN based contact layer with Gallium rich phase and thickness is between 5 Angstroms to 1000 Angstroms directly over said upper cladding layer; an AlGaInSnO system transparent conducting oxide (TCO) as a light transmitting layer directly over said GaN based contact layer, and the thickness of this TCO thin film must over 5 Angstroms; a first electrode formed on the partially exposed area of the first conductivity type GaN; and a second electrode formed on top of the light transmitting layer. 2. A light emitting diode as recited in claim 1, wherein said transparent conducting oxide (TCO) has the composition: description="In-line Formulae" end="lead"Alx Ga3-x-yIn5+ySn2-zO16-2z,description="In-line Formulae" end="tail" Where 0≦x<2, 0<y<3, 0≦ z<2. 3. A light emitting diode as recited in claim 1, wherein said transparent insulating substrate is selected from a group consisting of Al2O3, LiGaO2, LiAlO2 and MgAl 2O4. 4. A light emitting diode as recited in claim 1, wherein said GaN based contact layer is selected from a group consisting of AlGaN, GaN, and InGaN. 5. A light emitting diode, comprising: a first conductivity type substrate; a first conductivity type GaN as a first lower cladding layer directly over said substrate; an InGaN light-emitting layer directly over said lower cladding layer; a second conductivity type GaN as a second upper cladding layer directly over said InGaN light-emitting layer; a GaN based contact layer with Gallium rich phase and thickness is between 5 Angstroms to 1000 Angstroms directly over said upper cladding layer; an AlGaInSnO system transparent conducting oxide (TCO) as a light transmitting layer directly over said GaN based contact layer, and the thickness of this TCO thin film must over 5 Angstroms; a first electrode formed underneath the first conductivity type substrate; and a second electrode formed on top of the light transmitting layer. 6. A light emitting diode as recited in claim 5, wherein said transparent conducting oxide (TCO) has the composition: description="In-line Formulae" end="lead"Alx Ga3-x-yIn5+ySn2-zO16-2z,description="In-line Formulae" end="tail" Where 0≦x<2, 0<y<3, 0≦ z<2. 7. A light emitting diode as described in claim 5, wherein said conductivity type substrate is selected from a group consisting of SiC, Si, ZnSe, GaAs, GaP, GaN and AlN. 8. A light emitting diode as described in claim 5, wherein said GaN based contact layer is selected from a group consisting of AlGaN, GaN, and InGaN. 9. A light emitting diode, comprising: a transparent insulating substrate; a first conductivity type GaN as a first lower cladding layer directly over said transparent insulating substrate; an InGaN light-emitting layer directly over said lower cladding layer; a second conductivity type GaN as second upper cladding layer directly over said InGaN light-emitting layer; an AlGaInN system intermediate layer directly over said upper cladding layer, with material band-gap energy is lower than the second conductivity type GaN and thickness is between 5 Angstroms to 500 Angstroms; a GaN based contact layer with Gallium rich phase and thickness is between 5 Angstroms to 1000 Angstroms directly over said intermediate layer; an AlGaInSnO system transparent conducting oxide (TCO) as a light transmitting layer directly over said GaN based contact layer, and the thickness of this TCO thin film must over 5 Angstroms; a first electrode formed on the partially exposed area of the first conductivity type GaN; and a second electrode formed on top of the light transmitting layer. 10. A light emitting diode as recited in claim 9, wherein said transparent conducting oxide (TCO) has the composition: description="In-line Formulae" end="lead"Alx Ga3-x-yIn5+ySn2-zO16-2z,description="In-line Formulae" end="tail" Where 0≦x<2, 0<y<3, 0≦ z<2. 11. A light emitting diode as recited in claim 9, wherein said transparent insulating substrate is selected from a group consisting of Al2O3, LiGaO2, LiAlO2 and MgAl 2O4. 12. A light emitting diode as recited in claim 9, wherein said GaN based contact layer is selected from a group consisting of AlGaN, GaN, and InGaN. 13. A light emitting diode as recited in claim 9, wherein said intermediate layer is selected from a group consisting of AlGaInN, InGaN, and InN. 14. A light emitting diode, comprising: a transparent insulating substrate; a first conductivity type GaN as a first lower cladding layer directly over said transparent insulating substrate; an InGaN light-emitting layer directly over said lower cladding layer; a second conductivity type GaN as second upper cladding layer directly over said InGaN light-emitting layer; a GaN based contact layer with Gallium rich phase and thickness is between 5 Angstroms to 1000 Angstroms directly over said upper cladding layer; an AlGaInSnO system transparent conducting oxide (TCO) as a light transmitting layer directly over said GaN based contact layer, and the thickness of this TCO thin film must over 5 Angstroms; a transparent conducting oxide window layer directly over said light transmitting layer; a first electrode formed on the partially exposed area of the first conductivity type GaN; and a second electrode formed on top of the transparent conducting oxide window layer. 15. A light emitting diode as recited in claim 14, wherein said transparent conducting oxide (TCO) has the composition: description="In-line Formulae" end="lead"Alx Ga3-x-yIn5+ySn2-zO16-2z,description="In-line Formulae" end="tail" Where 0≦x<2, 0<y<3, 0≦ z<2. 16. A light emitting diode as recited in claim 14, wherein said transparent insulating substrate is selected from a group consisting of Al2O3, LiGaO2, LiAlO2 and MgAl 2O4. 17. A light emitting diode as recited in claim 14, wherein said GaN based contact layer is selected from a group consisting of AlGaN, GaN, and InGaN. 18. A light emitting diode as recited in claim 14, wherein said transparent conducting oxide window layer is selected from a group consisting of SnO2, In2O3, ITO, Cd2 SnO4, ZnO, CuAlO2, CuCaO2, SrCuO2, NiO, and AgCoO2.
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