초록 ▼

A double-gate field-effect transistor includes a substrate, an insulation film formed on the substrate, source, drain and channel regions formed on the insulation film from a semiconductor crystal layer, and two insulated gate electrodes electrically insulated from each other. The gate electrodes a

A double-gate field-effect transistor includes a substrate, an insulation film formed on the substrate, source, drain and channel regions formed on the insulation film from a semiconductor crystal layer, and two insulated gate electrodes electrically insulated from each other. The gate electrodes are formed opposite each other on the same principal surface as the channel region, with the channel region between the electrodes. The source, drain and channel regions are isolated from the surrounding part by a trench, forming an island. Gate insulation films are formed on the opposing side faces of the channel region exposed in the trench. The island region between the gate electrodes is given a width that is less than the length of the channel region to enhance the short channel effect suppressive property of structure.

대표청구항 ▼

What is claimed is: 1. A double-gate field-effect transistor comprising: a substrate; an insulation film formed on the substrate; and self-aligned source region, channel region, and drain region each contacting a principal surface of the insulation film on which the channel region is formed and eac

What is claimed is: 1. A double-gate field-effect transistor comprising: a substrate; an insulation film formed on the substrate; and self-aligned source region, channel region, and drain region each contacting a principal surface of the insulation film on which the channel region is formed and each made from a semiconductor crystal layer; and two insulated gate electrodes electrically insulated from each other and formed in opposition to one another on the principal surface of the insulation film, the channel region being interposed between gate insulation layers of the two insulated gate electrodes, wherein the channel region has a smaller width than each of the source and drain regions. 2. An integrated circuit having the double-gate field-effect transistor according to claim 1. 3. An integrated circuit having the double-gate field-effect transistor according to claim 1, wherein the integrated circuit uses an additional double-gate field-effect transistor according to claim 1 and having another channel region of a different width. 4. A double-gate field-effect transistor according to claim 1, wherein two insulated gate electrodes are electrically connected to operate the double-gate field-effect transistor. 5. A double-gate field-effect transistor according to claim 1, wherein the double-gate field-effect transistor is operated by electrically connecting different electric potentials to the two insulated gate electrodes. 6. A double-gate field-effect transistor according to claim 5, wherein one of the different electric potentials is a substantially fixed electric potential.