IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0600149
(2003-06-19)
|
|
발명자
/ 주소 |
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
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| 인용정보 |
피인용 횟수 :
0 인용 특허 :
115 |
초록
▼
A semiconductor device includes a heat sink adjacent to a die. A dam is positioned at the peripheral edges of the heat sink. During a transfer molding process, the dam serves two purposes. First, the dam prevents damage to the mold. Second, the dam prevents encapsulant packaging compound material fr
A semiconductor device includes a heat sink adjacent to a die. A dam is positioned at the peripheral edges of the heat sink. During a transfer molding process, the dam serves two purposes. First, the dam prevents damage to the mold. Second, the dam prevents encapsulant packaging compound material from flowing onto the heat sink. The dam may be a gasket. The dam may also be a burr created by, for example, stamping the bottom of the heat sink. The dam may include copper, polyamides, and leadlock tape. The dam may be permanently connected to the heat sink for removal following packaging. The dam may be removed mechanically, through the use of heat, or during an electrolytic deflash cycle.
대표청구항
▼
What is claimed is: 1. In a combination of a semiconductor die and a portion of a lead frame located adjacent to the semiconductor die in a molding apparatus, the molding apparatus having an upper mold half and a lower mold half, comprising: the upper mold half of the molding apparatus having a cav
What is claimed is: 1. In a combination of a semiconductor die and a portion of a lead frame located adjacent to the semiconductor die in a molding apparatus, the molding apparatus having an upper mold half and a lower mold half, comprising: the upper mold half of the molding apparatus having a cavity fonned therein; the lower mold half of the molding apparatus having a cavity formed therein having a first portion and having a second portion below the first portion; a semiconductor die having an upper surface and a lower surface, the semiconductor die located in at least a portion of the cavity of the upper mold half located adjacent a portion of the lead frame; a heat sink having an upper surface connected to the lower surface of the semiconductor die and having a lower surface having a periphery, the heat sink located in at least a portion of the first portion of the cavity in the lower mold half, the heat sink comprising a metal material; and a dam connected to the heat sink, the dam located on the lower surface of the heat sink, extending around the periphery thereof and extending from the periphery of the lower surface of the heat sink into at least a portion of the second portion of the cavity in the lower mold half, the dam openly communicating with the lower mold half. 2. The combination of claim 1, wherein the dam includes a gasket. 3. The combination of claim 1, wherein the heat sink and the darn each comprise a material including copper, aluminum, or alloys thereof. 4. The combination of claim 1, wherein the dam comprises a material including copper. 5. The combination of claim 1, wherein the dam comprises a material including polyamide material. 6. The combination of claim 1, wherein the dam comprises a material including leadlock tape material. 7. The combination of claim 6, wherein the leadlock tape material includes a polyamide carrier film and an adhesive material. 8. A semiconductor device assembly having at least a portion of a lead frame encapsulated in a material in a molding apparatus having an upper mold half and lower mold half, the upper mold half and lower mold half each having a cavity formed therein, comprising: a semiconductor die having an upper surface and a lower surface located adjacent the at least a portion of the lead frame; a heat sink located in one of the upper mold half and the lower mold half of the molding apparatus, the heat sink having an upper surface and a lower surface, each of the upper surface and the lower surface having a periphery, one of the upper surface and the lower surface for contacting one of the upper surface and the lower surface of the semiconductor die, the heat sink comprising a metal material; and a dam located adjacent the heat sink for contacting one of the upper surface and the lower surface of the semiconductor die, the dam located at the periphery of one of the upper surface and the lower surface of the heat sink and located adjacent the material, the dam for openly communicating with an environment in the lower mold half.
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