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A copper interconnect structure is disclosed as comprising a copper layer and an aluminum nitride layer formed over the copper layer. The aluminum nitride layer passivates the copper layer surface and enhances the thermal conductivity of a semiconductor substrate by radiating heat from the substrat

A copper interconnect structure is disclosed as comprising a copper layer and an aluminum nitride layer formed over the copper layer. The aluminum nitride layer passivates the copper layer surface and enhances the thermal conductivity of a semiconductor substrate by radiating heat from the substrate as well as from the copper layer.

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What is claimed as new and desired to be protected by Letters Patent of the United States is: 1. An interconnect structure providing electrical connection in a semiconductor device, said interconnect structure comprising: a first conductive plug; a second conductor plug electrically coupled to said

What is claimed as new and desired to be protected by Letters Patent of the United States is: 1. An interconnect structure providing electrical connection in a semiconductor device, said interconnect structure comprising: a first conductive plug; a second conductor plug electrically coupled to said first conductive plug; a barrier layer formed between said first conductive plug and said second conductor plug, wherein said barrier layer entirely covers said first conductive plug; and a heat-radiating layer formed over said second conductor plug, wherein said heat-radiating layer is from about 100 Å to 1,000 Å thick. 2. The interconnect structure of claim 1, wherein said heat-radiating layer is connected to a bond pad. 3. The interconnect structure of claim 1, wherein said heat-radiating layer is connected to an external heat dissipating path. 4. The interconnect structure of claim 1, wherein said first conductive plug is electrically connected to an active area of a substrate. 5. The interconnect structure of claim 1, wherein said heat-radiating layer acts as a heat dissipation path for said second conductor plug. 6. The interconnect structure of claim 1, wherein said heat-radiating layer passivates an upper surface of said second conductor plug. 7. The interconnect structure of claim 1, wherein said heat-radiating layer is approximately 300 Å thick. 8. The interconnect structure of claim 1, wherein said first conductive plug is formed of a material selected from the group consisting of polysilicon, cobalt, titanium nitride, tungsten, tungsten nitride, copper, aluminum, and platinum. 9. The interconnect structure of claim 1, wherein said barrier layer comprises a refractory metal compound. 10. The interconnect structure of claim 9, wherein said refractory metal compound is selected from the group consisting of refractory metal nitrides, refractory metal carbides, and refractory metal borides. 11. The interconnect structure of claim 1, wherein said second conductor plug is part of a metallization layer. 12. The interconnect structure of claim 1, wherein said second conductor plug is a copper conductor plug. 13. The interconnect structure of claim 12, wherein said copper conductor plug is formed of elemental copper. 14. The interconnect structure of claim 1, wherein said heat-radiating layer is an aluminum nitride layer. 15. An interconnect structure providing electrical connection on a semiconductor substrate, said interconnect structure comprising: a conductive plug; a conductor electrically coupled to said conductive plug; a barrier layer formed between said conductive plug and said conductor, wherein said barrier layer entirely covers said conductive plug; and a heat-radiating layer formed on an upper surface portion of said conductor and on a portion of said barrier layer, said heat-radiating layer providing a heat dissipating path for said conductor, wherein said heat-radiating layer is from about 100 Å to about 1000 Å thick. 16. The interconnect structure of claim 15, wherein said conductive plug is electrically connected to an active area of said substrate. 17. The interconnect structure of claim 15, wherein said conductor comprises copper. 18. The interconnect structure of claim 15, wherein said heat-radiating layer is an aluminum nitride layer. 19. A copper interconnect structure for an integrated circuit comprising: a copper layer; a conductor in electrical communication with said copper layer; a conductive barrier layer formed between said copper layer and said conductor, wherein said conductive barrier layer entirely covers said copper layer; and a heat-radiating layer formed on an upper surface portion of said copper layer, wherein said heat-radiating layer is from approximately 100 Å to approximately 1000 Å thick. 20. The copper interconnect structure of claim 19, wherein said copper layer forms at least part of a metallization layer of said integrated circuit. 21. An integrated circuit structure, comprising: a substrate; a transistor including a gate on said substrate and a source/drain region in said substrate disposed adjacent to said gate; an interconnect structure providing electrical connection to at least one of said source/drain region, said interconnect structure comprising a first conductive plug connected to said source/drain region of said substrate; a second conductor plug provided over top of said first conductive plug; and a heat-radiating layer formed over said second conductor plug, wherein said heat-radiating layer is from approximately 100 Å to approximately 1000 Å thick; and, a barrier layer which entirely covers said conductive plug, wherein said heat-radiating layer is formed on at least a portion of said barrier layer. 22. The structure of claim 21, wherein said heat-radiating layer is an aluminum nitride layer which passivates an upper surface portion of said second conductor plug. 23. The structure of claim 21, wherein said heat-radiating layer is an aluminum nitride layer which acts as a heat dissipation path for said second conductor plug. 24. The structure of claim 21, wherein said heat-radiating layer is connected to a bond pad. 25. The structure of claim 21, wherein said heat-radiating layer is connected to an external heat dissipating path. 26. The structure of claim 21, wherein said heat-radiating layer is approximately 300 Å thick. 27. The structure of claim 21, wherein said first conductive plug is formed of a material selected from the group consisting of polysilicon, cobalt, titanium nitride, tungsten, tungsten nitride, copper, aluminum, and platinum. 28. The structure of claim 21, wherein said barrier layer comprises a refractory metal compound. 29. The structure of claim 28, wherein said refractory metal compound is selected from the group consisting of refractory metal nitrides, refractory metal carbides, and refractory metal borides. 30. An integrated circuit containing a copper interconnect structure, said copper interconnect structure comprising: a copper layer; a conductive plug in electrical contact with said copper layer; a conductive barrier layer formed between said copper layer and said conductive plug, wherein said conductive barrier layer entirely covers said copper layer; and a heat-radiating layer comprised of a substantially continuous layer of aluminum nitride formed on said copper layer and on at least a portion of said conductive barrier layer, said heat-radiating layer is approximately 100 Å to approximately 1000 Å thick. 31. The integrated circuit of claim 30, wherein said copper layer forms at least part of a metallization layer of said integrated circuit. 32. The integrated circuit of claim 30, wherein said aluminum nitride layer acts as a heat dissipation path for said copper layer. 33. The integrated circuit of claim 30, wherein said aluminum nitride layer passivates said copper layer. 34. An integrated circuit containing an interconnect structure, said interconnect structure comprising: a conductive layer; a conductive barrier layer formed between said conductive layer and a conductive plug, wherein said conductive barrier layer entirely covers said conductive plug; and a substantially continuous heat-radiating layer formed on said conductive layer, wherein said heat-radiating layer is about 100 Å to 1,000 Å thick. 35. The integrated circuit of claim 34 further comprising a conductive plug in electrical communication with said conductive layer. 36. The integrated circuit of claim 34, wherein said heat-radiating layer is a layer of aluminum nitride which acts as a heat dissipating path. 37. The integrated circuit of claim 34, wherein said conductive layer forms at least part of a metallization layer of said integrated circuit. 38. A copper interconnect structure providing electrical connection in a semiconductor device, said copper interconnect structure comprising: a conductive plug; a copper conductor electrically coupled to said conductive plug; a barrier layer formed between said conductive plug and said copper conductor, wherein said barrier layer entirely covers said conductive plug; a heat-radiating layer formed on an upper surface portion of said copper conductor and on at least a portion of said barrier layer, said heat-radiating layer comprising a layer of aluminum nitride, wherein said heat-radiating layer is from approximately 100 Å to about 1000 Å thick, and wherein said heat-radiating layer is formed on at least a portion of the barrier layer; and at least one of a bond pad and an external heat dissipating path coupled to said heat-radiating layer. 39. An interconnect structure for an integrated circuit comprising: a first conductor layer; a second conductor layer electrically coupled with said first conductor layer; a conductive barrier layer formed between said first conductor layer and said second conductor layer, wherein said conductive barrier layer entirely covers said first conductor layer; and a heat-radiating layer formed over said first conductor layer, wherein said heat-radiating layer is approximately 100 Å to about 1000 Å thick, and wherein said heat-radiating layer is formed on at least a portion of the conductive barrier layer. 40. An integrated circuit structure, comprising: a substrate; a transistor including a gate on said substrate and a source/drain region in said substrate disposed adjacent to said gate; and, a copper interconnect structure providing electrical connection to said source/drain region, said copper interconnect structure comprising a conductive plug connected to said source/drain region; a copper conductor provided over said conductive plug; a heat-radiating layer formed over said copper conductor; and a barrier layer formed between said conductive plug and said copper conductor which entirely covers said conductive plug, wherein said heat-radiating layer is formed to be from approximately 100 Å to about 1000 Å thick, and wherein said heat-radiating layer is formed on at least a portion of the barrier layer. 41. An integrated circuit containing a copper interconnect structure, said copper interconnect structure comprising: a copper layer; a conductive plug in electrical contact with said copper layer; a conductive barrier layer formed between said copper layer and said conductive plug, wherein said conductive barrier layer entirely covers said conductive plug; and a heat-radiating layer formed over said copper layer, wherein said heat-radiating layer is formed to be from approximately 100 Å to about 1000 Å thick, and wherein said heat-radiating layer is formed at least on a portion of the conductive barrier layer. 42. A copper interconnect structure providing electrical connection in a semiconductor device, said copper interconnect structure comprising: a conductive plug; a copper conductor plug electrically coupled to said conductive plug, said copper conductor plug being formed over said conductive plug; a barrier layer formed between said conductive plug and said copper conductor plug, wherein said barrier layer comprises a non-refractory metal compound; a heat-radiating layer formed on an upper surface portion of said copper conductor, said heat-radiating layer comprising a layer of aluminum nitride, wherein said aluminum nitride layer has a thickness in the range of about 100 Å to 1,000 Å; and at least one of a bond pad and an external heat dissipating path coupled to said heat-radiating layer. 43. An integrated circuit structure, comprising: a substrate; a transistor including a gate on said substrate and a source/drain region in said substrate disposed adjacent to said gate; a copper interconnect structure providing electrical connection to at least one of said source/drain region, said copper interconnect structure comprising a conductive plug connected to said source/drain region of said substrate; a copper conductor provided on top of said conductive plug; and a heat-radiating layer formed on an upper surface portion of said copper conductor, said heat-radiating layer comprising aluminum nitride, wherein said heat-radiating layer is formed to be from approximately 100 Å to approximately 1000 Å thick; and, a barrier layer formed between said conductive plug and said copper conductor, wherein said barrier layer comprises a non-refractory metal compound. 44. An interconnect structure providing electrical connection in a semiconductor device, said interconnect structure comprising: a first conductive plug; a second conductor plug electrically coupled to said first conductive plug; a barrier layer formed between said first conductive plug and said second conductor plug, wherein said barrier layer substantially covers said first conductive plug, and comprises a non-refractory metal compound; and a heat-radiating layer formed over said second conductor plug, wherein said heat-radiating layer is from about 100 Å to 1,000 Å thick. 45. An integrated circuit structure, comprising: a substrate; a transistor including a gate on said substrate and a source/drain region in said substrate disposed adjacent to said gate; an interconnect structure providing electrical connection to at least one of said source/drain region, said interconnect structure comprising a first conductive plug connected to said source/drain region of said substrate; a second conductor plug provided over top of said first conductive plug; and a heat-radiating layer formed over said second conductor plug, wherein said heat-radiating layer is from approximately 100 Å to approximately 1000 Å thick; and, a barrier layer which substantially covers said conductive plug, wherein said heat-radiating layer is formed on at least a portion of said barrier layer, and said barrier layer comprises a non-refractory metal compound.