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Silver under-layers for electroless cobalt alloys

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/44
  • H01L-021/02
  • C23C-028/02
  • C25D-003/46
  • C25D-003/02
출원번호 US-0967101 (2004-10-15)
발명자 / 주소
  • Lopatin,Sergey D.
  • Shanmugasundrum,Arulkumar
  • Shacham Diamand,Yosef
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Patterson &
인용정보 피인용 횟수 : 4  인용 특허 : 104

초록

In one embodiment, a method for depositing a capping layer on a substrate surface containing a copper layer is provided which includes exposing the substrate surface to a zinc solution, exposing the substrate surface to a silver solution to form a silver layer thereon and depositing the capping laye

대표청구항

The invention claimed is: 1. A method for depositing a capping layer on a substrate surface containing a copper layer, comprising: exposing the substrate surface to a zinc solution during a pretreatment step; exposing the substrate surface to a silver solution to form a silver layer thereon; exposi

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이 특허를 인용한 특허 (4)

  1. Stewart, Michael P.; Weidman, Timothy W.; Shanmugasundram, Arulkumar; Eaglesham, David J., Electroless deposition process on a silicon contact.
  2. Gurumurthy, Charan; Salama, Islam; Jomaa, Houssam; Tanikella, Ravi, Integrated circuit and process for fabricating thereof.
  3. Wang,Xinming; Takagi,Daisuke; Tashiro,Akihiko; Fukunaga,Yukio; Fukunaga,Akira, Interconnects forming method and interconnects forming apparatus.
  4. Wang,Xinming; Takagi,Daisuke; Tashiro,Akihiko; Fukunaga,Yukio; Fukunaga,Akira, Interconnects forming method and interconnects forming apparatus.
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