Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B32B-018/00
B32B-037/16
B32B-037/14
출원번호
US-0994594
(2004-11-22)
발명자
/ 주소
Wang,Carl B.
Hang,Kenneth Warren
Needes,Christopher R.
출원인 / 주소
E. I. du Pont de Nemours and Company
인용정보
피인용 횟수 :
2인용 특허 :
13
초록▼
This invention relates to a process which produces flat, distortion-free, zero-shrink, low-temperature co-fired ceramic (LTCC) bodies, composites, modules or packages from precursor green (unfired) laminates of three or more different dielectric tape chemistries that are configured in an uniquely or
This invention relates to a process which produces flat, distortion-free, zero-shrink, low-temperature co-fired ceramic (LTCC) bodies, composites, modules or packages from precursor green (unfired) laminates of three or more different dielectric tape chemistries that are configured in an uniquely or pseudo-symmetrical arrangement in the z-axis of the laminate.
대표청구항▼
What is claimed is: 1. A low-temperature co-fired ceramic structure consisting essentially of an upper portion and a lower portion, wherein each portion comprises an assembly of one or more layers of glass-containing primary tape and one or more layers of low k or high k glass-containing internal s
What is claimed is: 1. A low-temperature co-fired ceramic structure consisting essentially of an upper portion and a lower portion, wherein each portion comprises an assembly of one or more layers of glass-containing primary tape and one or more layers of low k or high k glass-containing internal self-constraining tape, and wherein the self-constraining tape and primary tape is arrayed in combinations to provide symmetric and/or asymmetric z-axis placement and layer thickness arrangements to form co-fired ceramic circuit structures when the tapes are metallized with planar interconnecting circuits wherein the dielectric constant of the low k self contraining tape is less than 8, the dielectric constant of the high k tape is greater than 8, wherein each portion has z-axis symmetry with respect to the tape layers of the portion, wherein the structure, consisting of the upper and lower portions, has z-axis asymmetry with respect to the dielectric constant of the self constraining tape layers, and wherein each self-constraining tape can independently provide a self-constraining pressure-less assisted sintering LTCC assembly with the primary tape and wherein, upon thermal processing, the glass of the self-constraining tapes initiates sintering to attain a rigid form before the onset of sintering of the primary tape, and wherein the internal self-constraining tapes and the primary tape are laminated to form a compositionally asymmetrical laminate and wherein the assembly is thermally processed producing a structure exhibiting an interactive suppression of x,y shrinkage. 2. The ceramic structure of claim 1 wherein the dielectric constant of the primary tape is in the range of 7 to 9. 3. The ceramic structure of claim 1, in which the internal self-constraining tape layers and primary tape layers are metallized in a planar and in an interconnection manner. 4. The ceramic structure of claim 1 wherein the structure is populated with surface mounted components. 5. The ceramic structure of claim 1 wherein the internal constraining tapes and the primary tape comprise filler particles having a bimodal particle size distribution with D50 of the larger size particles being in the range of 1.5 to 3 microns and D50 of the smaller size particles being in the range of 0.3 to 0.8 microns. 6. The ceramic structure of claim 1 wherein the glass of the primary tape comprises, based on total composition: SiO2 52-55, Al2O3 12.5-14.5, B2O3 8-9, CaO 16-18, MgO 0.5-5, Na2O 1.7-2.5, Li2O 0.2-0.3, SrO 0-4, K 2O 1-2 in weight %. 7. The ceramic structure of claim 1 wherein the glass of the high k self-constraining tape comprises, based on total composition: B 2O3 6-13, BaO 20-22, Li2O 0.5-1.5, P2O 5 3.5-4.5, TiO2 25-33, Cs2O 1-6.5, Nd2 O3 29-32 in weight %. 8. The ceramic structure of claim 1 wherein the glass of the low k self-constraining tape comprises, based on total composition: SiO2 12-14, ZrO2 3-6, B2O3 20-27, BaO 12-15, MgO 33-36, Li2O 1-3, P2O5 3-8, Cs 2O 0-2 in weight %. 9. A multilayer electronic circuit having as one of its layers a ceramic structure of claim 1. 10. A multilayer electronic circuit comprising a rigid structure of claim 1 having a capacitor function. 11. A method of making a low-temperature co-fired ceramic structure consisting essentially of an upper portion and a lower portion, wherein each portion comprises an assembly of one or more layers of primary tape and one or more layers of low k or high k glass-containing internal self-constraining tape, and wherein the self-constraining tape and primary tape maybe arrayed in unique combinations to provide symmetric and/or asymmetric z-axis placement and layer thickness arrangements to form practical co-fired ceramic circuit structures when the tapes are metallized with planar and interconnecting circuits, wherein the dielectric constant of the low k self-constraining tape is less than 8, the dielectric constant of the high k self-constraining tape is greater than 8, wherein each portion has z-axis symmetry with respect to the tape layers of the portion, wherein the structure, consisting of the upper and lower portions, has z-axis asymmetry with respect to the dielectric constant of the self-constraining tape layers, and wherein each self-constraining tape can independently provide a constraining pressure-less assisted sintering LTCC assembly with the primary tape, comprising the following steps: providing one or more layers of low k glass-containing internal self-constraining tape, providing one or more layers of high k glass-containing internal self-constraining tape, providing at least one layer of glass-containing primary tape, layering said internal self-constraining tapes and said primary tape(s) to form an upper portion and a lower portion, wherein each portion comprises one or more layers of low k self-constraining tape or high k glass-containing internal self-constraining tape, and wherein each portion does not contain both low k tape and high k tape, wherein each portion comprises at least one layer of glass-containing primary tape, wherein the dielectric constant of the low k self-constraining tape is less than 8, the dielectric constant of the high k self-constraining tape is greater than 8, wherein each portion has z-axis symmetry with respect to the tare layers of the portion, wherein the structure, consisting of the upper and lower portions, has z-axis asymmetry with respect to the dielectric constant of the self-constraining tape layers, and wherein each self-constraining tape can independently provide a self-constraining pressure-less assisted sintering LTCC assembly with the primary tape, and wherein, upon thermal processing, the glass of the self-constraining tapes initiates sintering to attain a rigid form before the onset of sintering of the primary tape, and wherein the internal self-constraining tapes and the primary tape are laminated to form a compositionally asymmetrical laminate and wherein the assembly is thermally processed producing a structure exhibiting an interactive suppression of x,y shrinkage. 12. The method of claim 11 wherein the glass of the primary tape comprises, based on total composition: SiO2 52-55, Al 2O3 12.5-14.5, B2O3 8-9, CaO 16-18, MgO 0. 5-5, Na2O 1.7-2.5, Li2O 0.2-0.3, SrO 0-4, K2O 1-2 in weight %. 13. The method of claim 11 wherein the glass of the high k self-constraining tape comprises, based on total composition: B2 O36-13, BaO 20-22, Li2O 0.5-1.5, P2O5 3.5-4.5, TiO2 25-33, Cs2O 1-6.5, Nd7O3 29-32 in weight %. 14. The method of claim 11 wherein the glass of the low k self-constraining tape comprises, based on total composition: SiO2 12-14, ZrO2 3-6, B2O3 20-27, BaO 12-15, MgO 33-36, Li2O 1-3, P2O5 3-8, Cs2O 0-2 in weight %. 15. The method of claim 11 wherein the internal self-constraining tape layers and primary tape layers are metallized in a planar and in an interconnection manner.
Fasano Benjamin V. ; Indyk Richard F. ; Kamath Sundar M. ; Langenthal Scott I. ; Reddy Srinivasa S., Method for producing ceramic surfaces with easily removable contact sheets.
Mikeska Kurt R. (Wilmington DE) Schaefer Daniel T. (Newark DE) Jensen Richard H. (Wilmington DE), Method for reducing shrinkage during firing of green ceramic bodies.
Wang, Carl Baasun; Hang, Kenneth Warren; Needes, Christopher Roderick Stewart, Process for the constrained sintering of asymmetrically configured dielectric layers.
Wang, Carl Baasun; Hang, Kenneth Warren; Needes, Christopher Roderick Stewart, Tape composition and process for internally constrained sintering of low temperature co-fired ceramic.
Wang,Carl B.; Hang,Kenneth Warren; Needes,Christopher R., Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure.
Wang,Carl Baasun; Hang,Kenneth Warren; Needes,Christopher Roderick Stewart, Tape composition and process for internally constrained sintering of low temperature co-fired ceramic.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.