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A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by t

A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.

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What is claimed is: 1. A semiconductor chip comprising: a first device formative layer with a thickness of at most 50 μm provided over a thermal conductive substrate via a first adhesive layer; a thermal conductive film formed on the first device formative layer; and a second device formative

What is claimed is: 1. A semiconductor chip comprising: a first device formative layer with a thickness of at most 50 μm provided over a thermal conductive substrate via a first adhesive layer; a thermal conductive film formed on the first device formative layer; and a second device formative layer with a thickness of at most 50 μm formed over the thermal conductive film via a second adhesive layer. 2. The semiconductor chip according to claim 1, wherein the first device formative layer and the second device formative layer have thicknesses of from 0.1 to 10 μm. 3. The semiconductor chip according to claim 1, wherein the thermal conductive substrate is formed of one of a ceramic material containing aluminum oxide, aluminum nitride, aluminum nitride oxide, or silicon nitride as its main components, and a graphite material containing carbon as its main components. 4. The semiconductor chip according to claim 1, wherein the thermal conductive film comprises at least one selected from the group consisting of aluminum nitride, aluminum nitride oxide, boron phosphide, boron nitride, and diamond like carbon. 5. The semiconductor chip according to claim 1, wherein at least one of the first device formative layer and the second device formative layer comprises at least one selected from the group consisting of a TFT, a CPU including TFTs, an MPU, a memory and a light-emitting apparatus. 6. An electric device having the semiconductor chip according to claim 1. 7. The electric device according to claim 6, wherein the electric device is one selected from the group consisting of a video camera, a digital camera, a head mounting display, a car navigation, a projector, a personal computer and a potable information terminal. 8. A semiconductor chip comprising: a first device formative layer with a thickness of at most 50 μm provided over a thermal conductive substrate via a first adhesive layer; a thermal conductive film formed on the first device formative layer; and a second device formative layer with a thickness of at most 50 μm formed over the thermal conductive film via a second adhesive layer, wherein each of the first device formative layer and the second device formative layer is electrically connected to the thermal conductive substrate by a connection wire. 9. The semiconductor chip according to claim 8, wherein the first device formative layer and the second device formative layer have thicknesses of from 0.1 to 10 μm. 10. The semiconductor chip according to claim 8, wherein the thermal conductive substrate is formed of one of a ceramic material containing aluminum oxide, aluminum nitride, aluminum nitride oxide, or silicon nitride as its main components, and a graphite material containing carbon as its main components. 11. The semiconductor chip according to claim 8, wherein the thermal conductive film comprises at least one selected from the group consisting of aluminum nitride, aluminum nitride oxide, boron phosphide, boron nitride, and diamond like carbon. 12. The semiconductor chip according to claim 8, wherein at least one of the first device formative layer and the second device formative layer comprises at least one selected from the group consisting of a TFT, a CPU including TFTs, an MPU, a memory and a light-emitting apparatus. 13. An electric device having the semiconductor chip according to claim 8. 14. The electric device according to claim 13, wherein the electric device is one selected from the group consisting of a video camera, a digital camera, a head mounting display, a car navigation, a projector, a personal computer and a potable information terminal. 15. A semiconductor chip comprising: a first device formative layer with a thickness of at most 50 μm provided over a thermal conductive substrate via a first adhesive layer; a thermal conductive film formed on the first device formative layer; and a second device formative layer with a thickness of at most 50 μm formed over the thermal conductive film via a second adhesive layer, wherein a first semiconductor device included in the first device formative layer and a second semiconductor device included in the second device formative layer are electrically connected via the second adhesive layer by a first wiring included in the first device formative layer and an auxiliary wiring connected electrically to a second wiring included in the second formative layer. 16. The semiconductor chip according to claim 15, wherein the first device formative layer and the second device formative layer have thicknesses of from 0.1 to 10 μm. 17. The semiconductor chip according to claim 15, wherein the second adhesive layer contains an anisotropic conductive material. 18. The semiconductor chip according to claim 15, wherein the thermal conductive substrate is formed of one of a ceramic material containing aluminum oxide, aluminum nitride, aluminum nitride oxide, or silicon nitride as its main components, and a graphite material containing carbon as its main components. 19. The semiconductor chip according to claim 15, wherein the thermal conductive film comprises at least one selected from the group consisting of aluminum nitride, aluminum nitride oxide, boron phosphide, boron nitride, and diamond like carbon. 20. The semiconductor chip according to claim 15, wherein at least one of the first device formative layer and the second device formative layer comprises at least one selected from the group consisting of a TFT, a CPU including TFTs, an MPU, a memory and a light-emitting apparatus. 21. An electric device having the semiconductor chip according to claim 15. 22. The electric device according to claim 21, wherein the electric device is one selected from the group consisting of a video camera, a digital camera, a head mounting display, a car navigation, a projector, a personal computer and a potable information terminal.