Semiconductor device and wiring forming method in semiconductor device
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/4763
H01L-021/02
출원번호
US-0112538
(2005-04-22)
우선권정보
JP-P2001-090292(2001-03-27)
발명자
/ 주소
Aoyama,Junichi
Kobayashi,Toshio
출원인 / 주소
Sony Corporation
대리인 / 주소
Sonnenschein Nath &
인용정보
피인용 횟수 :
1인용 특허 :
9
초록▼
The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity e
The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0째 C.
대표청구항▼
What is claimed is: 1. A wiring forming method in a semiconductor device, the method comprising the steps of: (A) forming a wiring and a filling layer filled between wirings, on a substrate; (B) forming a gas permeable film on the wiring and the filling layer, said gas permeable film being made of
What is claimed is: 1. A wiring forming method in a semiconductor device, the method comprising the steps of: (A) forming a wiring and a filling layer filled between wirings, on a substrate; (B) forming a gas permeable film on the wiring and the filling layer, said gas permeable film being made of silicon nitride; (C) removing the filling layer through the gas permeable film so as to form a gap between the wirings; (D) filling the gap with a gas having a thermal conductivity equal to or higher than three times that of air at 0째 C. through the gas permeable film into the gap; and (E) forming a gas impermeable film on the gas permeable film, wherein, the filling layer comprises: a non-fluorine system polymer selected from the group consisting of BCB, poly-aryl-ether, polyimide, and like effective non-fluorine system polymers, a fluorine system polymer selected from the group consisting of a fluorine addition polymer, tetra-fluoro ethylene, cyclo-perfluoro carbon, poly-aryl-fluoride ether, fluorine addition parylene, and like effective flourine system polymers, organic SOG, silicon oxide system xerogel, nano-porous silica, or amorphous carbon. 2. A wiring forming method in a semiconductor device, the method comprising the steps of: (A) forming a plurality of wirings on a substrate with a filling layer between said wirings; (B) forming a gas permeable film on the wiring and the filling layer, said gas permeable film being made of a polyimide film; (C) removing the filling layer through the gas permeable film so as to form a gap; and (D) forming a gas impermeable film on the wirings and above gaps existing between the wirings, in a gas atmosphere having a thermal conductivity equal to or higher than three times that of air at 0째 C.; wherein, the filling layer comprises: a non-fluorine system polymer selected from the group consisting of BCB, poly-aryl-ether, polyimide, and like effective non-fluorine system polymers, a fluorine system polymer selected from the group consisting of a fluorine addition polymer, tetra-fluoro ethylene, cyclo-perfluoro carbon, poly-aryl-fluoride ether, fluorine addition parylene, and like effective flourine system polymers, organic SOG, silicon oxide system xerogel, nano-porous silica, or amorphous carbon. 3. A wiring forming method in a semiconductor device, the method comprising the steps of: (A) forming a plurality of wirings on a substrate with a filling layer between the wirings; (B) forming a gas permeable film on the wirings and above gaps existing between the wirings, said gas permeable film being made of one of silicon oxide film and a low dielectric constant film; (C) filling a gas having a thermal conductivity equal to or higher than three times that of air at 0째 C. through the gas permeable films into the gaps; and (D) forming a gas impermeable film made of silicon nitride on the gas permeable film, wherein, the filling layer comprises: a non-fluorine system polymer selected from the group consisting of BCB, poly-aryl-ether, polyimide, and like effective non-fluorine system polymers, a fluorine system polymer selected from the group consisting of a fluorine addition polymer, tetra-fluoro ethylene, cyclo-perfluoro carbon, poly-aryl-fluoride ether, fluorine addition parylene, and like effective flourine system polymers, organic SOG, silicon oxide system xerogel, nano-porous silica, or amorphous carbon.
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