Pad assembly for electrochemical mechanical processing
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B24D-011/00
C25D-017/10
B23H-005/08
B23H-005/00
출원번호
US-0727724
(2003-12-03)
발명자
/ 주소
Hu,Yongqi
Tsai,Stan D.
Wang,Yan
Liu,Feng Q.
Chang,Shou Sung
Chen,Liang Yuh
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Patterson and Sheridan
인용정보
피인용 횟수 :
7인용 특허 :
151
초록▼
Embodiments of a processing pad assembly for processing a substrate are provided. The processing pad assembly includes an upper layer having a processing surface and an electrode having a top side coupled to the upper layer and a bottom side opposite the top side. A first set of holes is formed thro
Embodiments of a processing pad assembly for processing a substrate are provided. The processing pad assembly includes an upper layer having a processing surface and an electrode having a top side coupled to the upper layer and a bottom side opposite the top side. A first set of holes is formed through the upper layer for exposing the electrode to the processing surface. At least one aperture is formed through the upper layer and the electrode.
대표청구항▼
The invention claimed is: 1. A processing pad assembly, comprising: an upper layer having a central aperture and a processing surface; and an electrode having a top side coupled to the upper layer and a bottom side opposite the top side, wherein a first set of holes is formed through the upper laye
The invention claimed is: 1. A processing pad assembly, comprising: an upper layer having a central aperture and a processing surface; and an electrode having a top side coupled to the upper layer and a bottom side opposite the top side, wherein a first set of holes is formed through the upper layer for exposing the electrode to the processing surface. 2. The processing pad assembly of claim 1, wherein the electrode is fabricated from a corrosion resistant conductive metal. 3. The processing pad assembly of claim 2, wherein the corrosion resistant conductive metal is Sn, Ni, Ti, or Au. 4. The processing pad assembly of claim 1, wherein the electrode is fabricated from a conductive metal coated with a corrosion resistant conductive metal. 5. The processing pad assembly of claim 4, wherein the corrosion resistant conductive metal is Sn, Ni, Ti, or Au. 6. The processing pad assembly of claim 1, wherein the electrode is fabricated from a corrosion-resistant conductive alloy. 7. The processing pad assembly of claim 6, wherein the corrosion-resistant conductive alloy is bronze, brass, stainless steel, or a palladium-tin alloy. 8. The processing pad assembly of claim 1, wherein the electrode is fabricated from a metal-coated fabric. 9. The processing pad assembly of claim 1, wherein the electrode is fabricated from a polymer matrix with a conductive filler. 10. The processing pad assembly of claim 2, wherein the electrode is a solid sheet. 11. The processing pad assembly of claim 2, wherein the electrode is a metal screen. 12. The processing pad assembly of claim 2, wherein the electrode is a perforated sheet. 13. The processing pad assembly of claim 2, wherein the electrode is primed with an adhesion promoter on a side facing the upper layer. 14. The processing pad assembly of claim 13, wherein the adhesion promoter is conductive. 15. The processing pad assembly of claim 1, wherein the electrode is permeable. 16. The processing pad assembly of claim 15, wherein a polymer layer is applied to the bottom side of the electrode. 17. The processing pad assembly of claim 16, wherein the polymer layer penetrates through the electrode and is at least partially exposed on the top side of the electrode. 18. The processing pad assembly of claim 16, wherein the polymer layer has a strong interaction with an adhesive used to couple the top side of the electrode to the upper layer. 19. The processing pad assembly of claim 1, wherein the electrode is coupled to the upper layer by an adhesive. 20. The processing pad assembly of claim 19, wherein the adhesive is chemically resistant to the electrolyte. 21. The processing pad assembly of claim 1, wherein the upper layer is conductive. 22. The processing pad assembly of claim 1, wherein the upper layer is nonconductive. 23. The processing pad assembly of claim 22, wherein the upper layer is fabricated from polyurethane. 24. The processing pad assembly of claim 1, wherein the electrode further comprises a plurality of independently biasable electrical zones. 25. The processing pad assembly of claim 24, wherein the electrical zones further comprises concentric rings. 26. The processing pad assembly of claim 1, further comprising a subpad disposed between the electrode and the upper layer. 27. The processing pad assembly of claim 1, wherein the electrode further comprises: a first conductive zone; and at least a second conductive zone. 28. The processing pad assembly of claim 27, wherein the electrode further comprises: a first conductive element comprising the first conductive zone; a second conductive element circumscribing the first conductive element comprising a second conductive zone; and a third conductive element circumscribing the second conductive element comprising a third conductive zone. 29. The processing pad assembly of claim 1, wherein the central aperture extends through the electrode. 30. A processing pad assembly, comprising: a conductive upper layer having a processing surface; and a corrosion resistant conductive metallic lower layer having a top side coupled to the conductive upper layer and a bottom side opposite the top side, the lower layer having a plurality of laterally separated, independently electrically biasable zones, wherein a first set of holes is formed through the conductive upper layer for exposing the electrode to the processing surface. 31. The processing pad assembly of claim 30, wherein the conductive upper layer and the lower layer includes at least one aperture formed therethrough.
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이 특허에 인용된 특허 (151)
Buchanan Scott J. (Minneapolis) Morrison Eric D. (West St. Paul) Boston David R. (Woodbury) Hedrick Steven T. (Cottage Grove) Kausch William L. (Cottage Grove) Larson Wayne K. (Maplewood MN), Abrasive article having vanadium oxide incorporated therein.
Harmer Walter L. (Arden Hills MN) Christensen Leif (St. Paul MN) Drtina Gary J. (Woodbury MN) Helmin Harvey J. (Golden Valley MN), Abrasive article with conductive, doped, conjugated, polymer coat and method of making same.
Ryoke Katsumi (Kanagawa JPX) Fujiyama Masaaki (Kanagawa JPX) Yamada Keisuke (Kanagawa JPX), Abrasive tape having an interlayer for magnetic head cleaning and polishing.
Birang Manoocher ; Rosenberg Lawrence M. ; Somekh Sasson ; White John M, Apparatus and methods for chemical mechanical polishing with an advanceable polishing sheet.
Satou Yuuichi,JPX, Apparatus for accurately measuring local thickness of insulating layer on semiconductor wafer during polishing and polishing system using the same.
Cote William J. (Poughquag NY) Ryan James G. (Newtown CT) Okumura Katsuya (Poughkeepsie NY) Yano Hiroyuki (Wappingers Falls NY), Apparatus for processing semiconductor wafers.
Andreshak Joseph C. (Mahopac NY) Datta Madhav (Peekskill NY) Romankiw Lubomyr T. (Briarcliff Manor NY) Vega Luis F. (Simsbury CT), Apparatus, electrochemical process, and electrolyte for microfinishing stainless steel print bands.
Dorsett Terry E. (11205 Hosford Rd. Chardon OH 44024) Rininger David P. (505 Courtland St. Fairport Harbor OH 44077) Strempel Thomas G. (23601 Colbourne Rd. Euclid OH 44123), Application of electroplate to moving metal by belt plating.
Damgaard Morten J.,DKX ; Bjerregaard Leila,DKX, Attachment means and use of such means for attaching a sheet-formed abrasive or polishing means to a magnetized support.
Schnabel Herbert W. (Midlothian VA) Buchanan Scott J. (Minneapolis MN) McAllister Richard G. (Sterling MA), Coated abrasive article containing an electrically conductive backing.
Tolles Robert D. ; Shendon Norm ; Somekh Sasson ; Perlov Ilya ; Gantvarg Eugene ; Lee Harry Q., Continuous processing system for chemical mechanical polishing.
Homayoun Talieh ; Cyprian Uzoh ; Bulent M. Basol, Device providing electrical contact to the surface of a semiconductor workpiece during metal plating.
Edelstein Daniel C. ; Horkans Wilma J. ; Luce Stephen E. ; Lustig Naftali E. ; Pope Keith R. ; Roper Peter D., Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing.
Ho Kwok-Lun (P.O. Box 33427 St. Paul MN 55133-3427) Harmer Walter L. (P.O. Box 33427 St. Paul MN 55133-3427), High performance abrasive articles containing abrasive grains and nonabrasive composite grains.
Kaanta Carter W. (Colchester VT) Leach Michael A. (Bristol VT), In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection.
Miller Gabriel L. (Westfield NJ) Wagner Eric R. (South Plainfield NJ), In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection.
Cheung Robin ; Carl Daniel A. ; Dordi Yezdi ; Hey Peter ; Morad Ratson ; Chen Liang-Yuh ; Smith Paul F. ; Sinha Ashok K., In-situ electroless copper seed layer enhancement in an electroplating system.
Lustig Naftali E. (Croton on Hudson NY) Feenstra Randall M. (Mt. Kisco NY) Guthrie William L. (Hopewell Junction NY), In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage.
Adefris Negus B. ; Erickson Carl P., Metal bond abrasive article comprising porous ceramic abrasive composites and method of using same to abrade a workpiece.
Paul Lindquist ; Bulent Basol ; Cyprian Uzoh ; Homayoun Talieh, Method and apparatus employing pad designs and structures with improved fluid distribution.
Ben Mooring ; Wilbur Krusell ; Glenn Travis ; Erik Engdahl, Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed.
Tsai, Stan D.; Wang, Yuchun; Wijekoon, Kapila; Bajaj, Rajeev; Redeker, Fred C., Method and apparatus for enhanced CMP using metals having reductive properties.
Tsai, Stan D.; Wang, Yuchun; Wijekoon, Kapila; Bajaj, Rajeev; Redeker, Fred C., Method and apparatus for enhanced CMP using metals having reductive properties.
Lustig Naftali Eliahu ; Guthrie William L. ; Sandwick Thomas E., Method and apparatus for in-line oxide thickness determination in chemical-mechanical polishing.
Sabde Gundu M. ; Meikle Scott, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives.
Walker Michael A., Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies.
Mayer Steven T. (Piedmont CA) Contolini Robert J. (Pleasanton CA) Bernhardt Anthony F. (Berkeley CA), Method and apparatus for spatially uniform electropolishing and electrolytic etching.
Emesh, Ismail; Gopalan, Periya; Rayer, II, Phillip M.; Palmer, Bentley J., Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface.
Nagahara Ronald J. ; Lee Dawn M., Method and apparatus for using pressure differentials through a polishing pad to improve performance in chemical mechani.
Jalal Ashjaee ; Boguslaw A. Nagorski ; Bulent M. Basol ; Homayoun Talieh ; Cyprian Uzoh, Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing.
Yu Chris C. (Boise ID) Doan Trung T. (Boise ID), Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing.
Wang, Hui; Gutman, Felix; Nuch, Voha, Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces.
Xu, Cangshan; Zhao, Eugene Y.; Dai, Fen, Methods for making reinforced wafer polishing pads utilizing direct casting and apparatuses implementing the same.
Cook Lee Melbourne ; James David B. ; Jenkins Charles William ; Reinhardt Heinz F. ; Roberts John V. H. ; Pillai Raj Raghav, Methods for using polishing pads.
Markoo Eric L. (Markaryd SW) Strand Tore G. H. (Naasjo SW) Sandell Thorsten W. (Markaryd SW), Multilayered flexible abrasive containing a layer of electroconductive material.
Shyng-Tsong Chen ; Alex Siu Keung Chung ; Oscar Kai Chi Hsu ; Kenneth P. Rodbell ; Jean Vangsness, Multilayered polishing pad, method for fabricating, and use thereof.
Reinhardt Heinz F. (Chadds Ford PA) Roberts John V. H. (Newark DE) McClain Harry G. (Middletown DE) Budinger William D. (Newark DE) Jensen Elmer W. (New Castle DE), Polymeric polishing pad containing hollow polymeric microelements.
Perlov Ilya ; Gantvarg Eugene ; Lee Harry Q. ; Somekh Sasson ; Tolles Robert D., Radially oscillating carousel processing system for chemical mechanical polishing.
Leach Michael A. (Bristol VT) Paulsen James K. (Jericho VT) Machesney Brian J. (Burlington VT) Venditti Daniel J. (Essex Junction VT) Whitaker Christopher R. (Jericho VT), System for mechanical planarization.
Carlson David W., Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates.
Allison, William C.; Scott, Diane; Huang, Ping; Frentzel, Richard; Simpson, Alexander William, Homogeneous polishing pad for eddy current end-point detection.
Allison, William C.; Scott, Diane; Huang, Ping; Frentzel, Richard; Simpson, Alexander William, Homogeneous polishing pad for eddy current end-point detection.
Allison, William C.; Scott, Diane; Huang, Ping; Frentzel, Richard; Simpson, Alexander William, Method of fabricating a polishing pad with an end-point detection region for eddy current end-point detection.
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