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Methods and apparatuses for planarizing microelectronic substrate assemblies

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23F-001/00
출원번호 US-0916164 (2001-07-25)
발명자 / 주소
  • Sabde,Gundu M.
  • Lee,Whonchee
출원인 / 주소
  • Micron Technology, Inc.
대리인 / 주소
    Dorsey &
인용정보 피인용 횟수 : 0  인용 특허 : 30

초록

Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing p

대표청구항

The invention claimed is: 1. A planarizing machine for planarizing microelectronic-device substrate assemblies, comprising: a support table; a polishing pad on the support table, the polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attach

이 특허에 인용된 특허 (30)

  1. Fujii Kazuhito,JPX ; Yamaguchi Masahisa,JPX ; Miyachi Takaki,JPX ; Okawa Kojiro,JPX ; Suzuura Yasuki,JPX, Abrasive tape, process for producing it, and coating agent for abrasive tape.
  2. Reidmeyer Mary R., Agglomerated die casting lubricant.
  3. Obeng Yaw S. ; Schultz Laurence D., Apparatus and method for continuous delivery and conditioning of a polishing slurry.
  4. Southwick Scott A., Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semicon.
  5. Brunelli Thad ; Garrison Gina ; Van Buren Wade, Apparatus for loading and unloading substrates to a chemical-mechanical planarization machine.
  6. Hassett Gerald M. (Lexington MA) Palmaccio Linda A. (Concord MA), Chemical polishing process and apparatus.
  7. Burke Peter A. ; Beckage Peter J., Chemical-mechanical polishing slurry that reduces wafer defects and polishing system.
  8. Dana David E. (Pittsburgh PA) Morris Steven J. (Freeport PA), Chemically treated glass fibers for reinforcing polymers.
  9. Jahnke Richard W. (Mentor OH) Kocurek Lawrence J. (Willowick OH) Bush James H. (Mentor OH), Compositions containing combinations of surfactants and derivatives of succininc acylating agent or hydroxyaromatic comp.
  10. Pant Anil K. ; Breivogel Joseph R. ; Young Douglas W. ; Rivera Robert M., Control of chemical-mechanical polishing rate across a substrate surface for a linear polisher.
  11. Chopra Dinesh, Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with.
  12. Sethuraman Anantha R. ; Koutny ; Jr. William W. C., Employing an acidic liquid and an abrasive surface to polish a semiconductor topography.
  13. Molnar, Charles J, Finishing element using finishing aids.
  14. Molnar Charles J, Fixed abrasive finishing element having aids finishing method.
  15. Yianakopoulos Georges (Rue Gros Gland ; 30 ; 4000 Liege BEX), Liquid cleaning compositions.
  16. Blalock Guy, Method and apparatus for controlling planarizing characteristics in mechanical and chemical-mechanical planarization of microelectronic substrates.
  17. Chopra Dinesh, Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies.
  18. Lamphere Craig F. ; Kim Chong Yong ; Kaisaki David A. ; Kranz Heather K. ; Williams Julia P., Method and article for the production of optical quality surfaces on glass.
  19. Hudson Guy F., Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad.
  20. Bruxvoort Wesley J. ; Culler Scott R. ; Ho Kwok-Lun ; Kaisaki David A. ; Kessel Carl R. ; Klun Thomas P. ; Kranz Heather K. ; Messner Robert P. ; Webb Richard J. ; Williams Julia P., Method of modifying an exposed surface of a semiconductor wafer.
  21. Sabde Gundu M., Methods and apparatuses for planarizing microelectronic substrate assemblies.
  22. Wijekoon, Kapila; Tsai, Stan D.; Wang, Yuchun; Bennett, Doyle E.; Redeker, Fred C.; Chandrachood, Madhavi; Brown, Brian J., Multi-fluid polishing process.
  23. Roy, Sudipto R., Self-siphoning CMP tool design for applications such as copper CMP and low-k dielectric CMP.
  24. Alban Noelle C. (Naugatuck CT) Deckner George E. (Trumbull CT), Silicone containing skin care compositions having improved oil control.
  25. Robinson Karl M. ; Andreas Michael, Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries.
  26. Faris Theodore P., Sprayable cleaning gel, dispenser, and method of using same.
  27. Sethuraman Anantha R. ; Koutny ; Jr. William W. C., System for cleaning a surface of a dielectric material.
  28. Meyer Anthony S. ; Mallon Thomas G. ; Withers Bradley ; Young Douglas W., Technique for improving within-wafer non-uniformity of material removal for performing CMP.
  29. Chopra Dinesh ; Meikle Scott G., Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing .
  30. Wright David Q. ; Skrovan John K., Variable abrasive polishing pad for mechanical and chemical-mechanical planarization.
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