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Full sequence metal and barrier layer electrochemical mechanical processing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/311
  • H01L-021/02
출원번호 US-0941060 (2004-09-14)
발명자 / 주소
  • Liu,Feng Q.
  • Chen,Liang Yuh
  • Tsai,Stan D.
  • Hu,Yongqi
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Patterson and Sheridan
인용정보 피인용 횟수 : 2  인용 특허 : 218

초록

A method and apparatus for electrochemically processing metal and barrier materials is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier mate

대표청구항

What is claimed is: 1. A method for electroprocessing a substrate, comprising: establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode; pressing the substrate against a processing pad assembly with a force le

이 특허에 인용된 특허 (218)

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이 특허를 인용한 특허 (2)

  1. Manens,Antoine P.; Chen,Liang Yuh, Process control in electrochemically assisted planarization.
  2. McGeehin, Peter K.; Yi, GE; McInroy, Andrew B.; Lafferty, Brendan, Write element modification control using a galvanic couple.
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