IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0917842
(2001-07-27)
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발명자
/ 주소 |
- Chin,Barry L.
- Mak,Alfred W.
- Lei,Lawrence Chung Lai
- Xi,Ming
- Chung,Hua
- Lai,Ken Kaung
- Byun,Jeong Soo
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
26 인용 특허 :
212 |
초록
▼
A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two o
A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
대표청구항
▼
What is claimed is: 1. An apparatus comprising: (a) a deposition chamber, wherein the deposition chamber is divided into two or more deposition regions that are integrally connected to one another; and (b) a wafer support disposed in the deposition chamber, wherein the wafer support is moveable bet
What is claimed is: 1. An apparatus comprising: (a) a deposition chamber, wherein the deposition chamber is divided into two or more deposition regions that are integrally connected to one another; and (b) a wafer support disposed in the deposition chamber, wherein the wafer support is moveable between the two or more interconnected deposition regions. 2. The apparatus of claim 1 wherein a piston coupled to the wafer support moves the wafer support between the two or more interconnected deposition regions. 3. The apparatus of claim 1, further comprising a heater wherein the heater is adapted to controls the temperature of the wafer support. 4. The apparatus of claim 1 wherein the wafer support is an electrostatic chuck. 5. The apparatus of claim 1 wherein each of the two or more deposition regions are integrally connected to another of the two or more deposition regions with an aperture. 6. The apparatus of claim 5 wherein the aperture is sealed to minimize the intermixing of deposition gases between the two or more deposition regions. 7. The apparatus of claim 1, further comprising a gas supply panel coupled to the deposition chamber. 8. The apparatus of claim 7 wherein the gas supply panel includes one or more gas supply lines which couple the gas supply panel to the deposition chamber. 9. The apparatus of claim 1, further comprising a gas exhaust pump coupled to the deposition chamber. 10. The apparatus of claim 1, wherein the first and second deposition regions are vertically stacked. 11. The apparatus of claim 1, wherein the chamber further comprises: a first orifice adapted to provide process gas to the first deposition region; and a second orifice adapted to provide process gas to the second deposition region. 12. The apparatus of claim 11, wherein the first orifice is disposed vertically above the second orifice. 13. A method of depositing a material layer on a substrate comprising: (a) positioning a substrate on a wafer support in a deposition chamber comprising a first and second deposition region, wherein the first and second deposition regions are integrally connected to one another, and wherein the wafer support is movable between the first and second deposition regions; (b) introducing a first deposition gas into the first deposition region and a second deposition gas into the second deposition region; (c) moving the wafer support with the substrate thereon into the first deposition region wherein a first monolayer of the first deposition gas is chemisorbed onto the surface of the substrate; (d) changing the elevation of the wafer support to transport the substrate thereon into the second deposition region wherein a first monolayer of the second deposition gas is chemisorbed on the first monolayer of the first deposition gas; and (e) repeating steps (c) and (d) until a material layer having a desired thickness is achieved. 14. A computer storage medium containing a software routine that when executed causes a general purpose computer to control a process chamber using a layer deposition method, comprising: (a) positioning a substrate on a wafer support in a deposition chamber comprising a first and second deposition region, wherein the first and second deposition regions are integrally connected to one another, and wherein the wafer support is movable between the first and second deposition regions; (b) introducing a first deposition gas into the first deposition region and a second deposition gas into the second deposition region; (c) moving the wafer support with the substrate thereon into the first deposition region wherein a first monolayer of the first deposition gas is chemisorbed onto the surface of the substrate; (d) changing the elevation of the wafer support to transport the substrate thereon into the second deposition region wherein a first monolayer of the second deposition gas is chemisorbed on the first monolayer of the first deposition gas; and (e) repeating steps (c) and (d) until a material layer having a desired thickness is achieved. 15. A method of depositing a material layer on a substrate comprising: positioning a substrate on a substrate support in a deposition chamber comprising a first deposition region and a second deposition region, wherein the first and second deposition regions are integrally connected to one another, and wherein the substrate support is moveable between the first and second regions; depositing a first monolayer on the substrate disposed on the substrate support in the first deposition region; elevating the wafer positioned on the substrate support on the second deposition region; and depositing a layer on the substrate in the second deposition region. 16. The method of claim 15 further comprising: depositing a second monolayer on the substrate in the second deposition region. 17. The method of claim 15 further comprising: introducing a first deposition gas to form the first monolayer in the first deposition region; and introducing a second deposition gas to deposit the layer in the second deposition region. 18. The method of claim 17 further comprising: flowing a purge gas into at least one of the integrally connected deposition regions between the introduction of the first and second deposition gases. 19. The method of claim 17, wherein the step of moving the wafer positioned on the substrate support to the second deposition region further comprises: moving the substrate support vertically. 20. The method of claim 15, wherein the deposition chamber is a vacuum deposition chamber. 21. An apparatus for processing a substrate comprising: a deposition chamber wherein the deposition chamber is divided into two or more deposition regions that are integrally connected to one another, at least one of said regions being adapted to support deposition of a monolayer upon a surface of a substrate; and a wafer support disposed in the deposition chamber and having a horizontal wafer supporting surface, wherein the wafer support is moveable between two or more interconnected deposition regions, wherein one of said deposition regions is vertically stacked above another of said deposition regions. 22. The apparatus of claim 21 in which said at least one deposition region is adapted to support deposition of a second monolayer. 23. The apparatus of claim 21 in which said at least one deposition region is adapted to support deposition via chemisorption. 24. The apparatus of claim 21, wherein the deposition chamber is a vacuum deposition chamber. 25. An apparatus for processing a substrate, comprising: a deposition chamber wherein the deposition chamber is divided into two or more deposition regions that are integrally interconnected to one another, at least one of said deposition regions being adapted to support deposition of a first monolayer upon a surface of a substrate and at least one of said deposition regions being optionally sealable from the other deposition regions, and wherein one of said deposition regions is vertically stacked above another of said deposition regions; and a wafer support disposed in the deposition chamber and configured to support the substrate horizontally, wherein the wafer support is moveable between two or more interconnected deposition regions. 26. The apparatus of claim 25 in which said at least one regions are adapted to support deposition of a second monolayer. 27. The apparatus of claim 25 in which at least one of said regions is sealed so as to minimize intermixing of deposition gases within two or more deposition regions. 28. The apparatus of claim 25 in which said chamber further comprises an orifice for each of said deposition regions, each orifice adapted to provide process gas to a respective deposition region. 29. The apparatus of claim 28, in which each orifice is adapted to provide differing process gases. 30. The apparatus of claim 28 in which at least one of said orifices is adapted to provide process gas and purge gas. 31. The apparatus of claim 25 in which said at least one deposition region is adapted to support deposition via chemisorption. 32. The apparatus of claim 25, wherein the deposition chamber is a vacuum deposition chamber. 33. An apparatus for processing a substrate, comprising: a deposition chamber body having a sealable port configured for horizontal entry and egress of a substrate; at least two or more deposition regions defined in the chamber body, at least a first deposition region of said deposition regions is adapted to support vertical deposition of a first monolayer upon a surface of a substrate, wherein one of said deposition regions is vertically stacked above another of said deposition regions; and a wafer support disposed in the deposition chamber, wherein the wafer support is moveable between two or more interconnected deposition regions. 34. The apparatus of claim 33, wherein at least one of said deposition regions is sealable from the other deposition regions. 35. The apparatus of claim 33, wherein said at least a second deposition region is adapted to support deposition of a second monolayer. 36. The apparatus of claim 33 in which at least one of said regions is sealed so as to minimize intermixing of deposition gases within two or more deposition regions. 37. The apparatus of claim 33 in which said chamber further comprises an orifice for each of said deposition regions, each orifice adapted to provide process gas to a respective deposition region. 38. The apparatus of claim 37, in which each orifice is adapted to provide differing process gases. 39. The apparatus of claim 33, wherein the deposition chamber is a vacuum deposition chamber.
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