A film is formed on a semiconductor substrate where a copper layer is to be formed and in contact with the film, by a method including the steps of: (i) introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space wher
A film is formed on a semiconductor substrate where a copper layer is to be formed and in contact with the film, by a method including the steps of: (i) introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrate is placed; (ii) depositing a silicon carbide film on the substrate by exciting the first reaction gas into a plasma; (iii) introducing a second reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, an oxidizing gas, and an inert gas, into the reaction space; and (iv) depositing a carbon-containing silicon oxide film on top of the silicon carbide film by exciting the second reaction gas into a plasma.
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What is claimed is: 1. A method for forming a film on a semiconductor substrate where a copper layer is to be formed and in contact with the film, comprising the steps of: introducing a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrat
What is claimed is: 1. A method for forming a film on a semiconductor substrate where a copper layer is to be formed and in contact with the film, comprising the steps of: introducing a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrate is placed; depositing a silicon carbide film on the substrate by exciting the deposition gas and the inert gas into a plasma; introducing an oxidizing gas at a flow rate greater than that of the deposition gas into the reaction space while continuously introducing the deposition gas and the inert gas into the reaction space; and depositing a carbon-containing silicon oxide film on top of the silicon carbide film by exciting the deposition gas, the oxidizing gas, and the inert gas into a plasma. 2. The method according to claim 1, wherein the silicon carbide film contains no oxygen. 3. The method according to claim 1, wherein the silicon carbide film is formed where a copper wiring layer is to be formed and in contact with the silicon carbide film. 4. A method for forming a film on a semiconductor substrate where a copper layer is to be formed and in contact with the film, comprising the steps of: introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrate is placed; depositing a silicon carbide film on the substrate by exciting the first reaction gas into a plasma; introducing a second reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, an oxidizing gas, and an inert gas, into the reaction space; and depositing a carbon-containing silicon oxide film on top of the silicon carbide film by exciting the second reaction gas into a plasma, wherein the excitation of the first and second reaction gases are conducted by applying radio-frequency (RF) power to the respective gases. 5. The method according to claim 4, wherein the step for depositing the silicon carbide and the step for depositing the carbon-containing silicon oxide film are continuously performed without interruption of RF power supply. 6. The method according to claim 4, wherein RF power supply is discontinued between the step for depositing the silicon carbide and the step for depositing the carbon-containing silicon oxide film. 7. The method according to claim 6, wherein RF power supply is reinitiated after introducing the second reaction gas and stabilizing the pressure. 8. A method for forming a film on a semiconductor substrate where a copper layer is to be formed and in contact with the film, comprising the steps of: introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrate is placed; depositing a silicon carbide film on the substrate by exciting the first reaction gas into a plasma; introducing a second reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, an oxidizing gas, and an inert gas, into the reaction space; and depositing a carbon-containing silicon oxide film on top of the silicon carbide film by exciting the second reaction gas into a plasma, wherein the deposition gas is tetramethylsiliane or trimethylsilane. 9. The method according to claim 1, wherein the inert gas is argon, helium, neon, xenon, or krypton. 10. The method according to claim 1, wherein the silicon carbide film comprises silicon, carbon, nitrogen and hydrogen. 11. The method according to claim 1, where the carbon-containing silicon oxide film comprises silicon, carbon, oxygen and hydrogen. 12. The method according to claim 1, wherein the carbon-containing silicon oxide film is formed at a temperature of the substrate of 300째 C. to 400째 C. 13. The method according to claim 1, where the silicon carbide film is formed at a temperature of the substrate of 300째 C. to 400째 C. 14. A method for forming a film on a semiconductor substrate where a copper layer is to be formed and in contact with the film, comprising the steps of: introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrate is placed; depositing a silicon carbide film on the substrate by exciting the first reaction gas into a plasma; introducing a second reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, an oxidizing gas, and an inert gas, into the reaction space; and depositing a carbon-containing silicon oxide film on top of the silicon carbide film by exciting the second reaction gas into a plasma, wherein the deposition of the silicon carbide film is discontinued when the thickness of the silicon carbide film reaches 3 nm to 10 nm. 15. A method for forming a film on a semiconductor substrate where a copper layer is to be formed and in contact with the film, comprising the steps of: introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrate is placed; depositing a silicon carbide film on the substrate by exciting the first reaction gas into a plasma; introducing a second reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, an oxidizing gas, and an inert gas, into the reaction space; and depositing a carbon-containing silicon oxide film on top of the silicon carbide film by exciting the second reaction gas into a plasma, wherein the deposition of the carbon-containing silicon oxide film is discontinued when the thickness of the carbon-containing silicon oxide film reaches 30 nm to 70 nm. 16. A method for forming a film on a semiconductor substrate where a copper layer is to be formed and in contact with the film, comprising the steps of: introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrate is placed; depositing a silicon carbide film on the substrate by exciting the first reaction gas into a plasma; introducing a second reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, an oxidizing gas, and an inert gas, into the reaction space; and depositing a carbon-containing silicon oxide film on top of the silicon carbide film by exciting the second reaction gas into a plasma, wherein the step for depositing the silicon carbide film and the step for depositing the carbon-containing silicon oxide film are conducted in a reaction chamber where a low dielectric layer is formed on the substrate. 17. A method for forming a film on a semiconductor substrate where a copper layer is to be formed and in contact with the film, comprising the steps of: introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an inert gas, into a reaction space where a substrate is placed; depositing a silicon carbide film on the substrate by exciting the first reaction gas into a plasma; introducing a second reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, an oxidizing gas, and an inert gas, into the reaction space; and depositing a carbon-containing silicon oxide film on top of the silicon carbide film by exciting the second reaction gas into a plasma, wherein the step for depositing the silicon carbide film and the step for depositing the carbon-containing silicon oxide film are conducted in a reaction chamber in the vicinity of a reaction chamber where a low dielectric layer is formed on the substrate. 18. The method according to claim 1, wherein the film is an etch stop layer. 19. The method according to claim 1, wherein the film is a hard mask. 20. A method for manufacturing on a semiconductor substrate an interlayer structure containing a film in contact with a copper layer, comprising the steps of: (i) forming multiple layers on a semiconductor substrate; (ii) forming a hole for an interlayer connection of the multiple layers by etching; (iii) depositing copper in the hole; (iv) removing an excess of the copper from a top of the multiple layers; (v) depositing a silicon carbide film on the top of the multiple layers by plasma reaction, wherein the copper is covered by the silicon carbide film; and (vi) depositing a carbon-containing silicon oxide film on top of the silicon carbide film by plasma reaction. 21. The method according to claim 20, wherein the multiple layers comprise a lower etch stop layer, a low dielectric layer, and an upper etch stop layer laminated in sequence on the substrate, and in step (ii) the hole is produced by forming a resist on top of the upper etch stop layer and forming a via hole by etching the multiple layers using the resist, and in step (iv) the resist and the upper etch stop layer are removed when removing the excess of the copper. 22. The method according to claim 20, wherein the multiple layers comprise a lower etch stop layer, a lower low dielectric layer, an intermediate etch stop layer, an upper low dielectric layer, and in step (ii) an upper etch stop layer laminated in sequence on the substrate, and the hole is produced by forming a resist on top of the upper etch stop layer and forming a via hole and trench by etching the multiple layers using the resist, and in step (iv) the resist and the upper etch stop layer are removed when removing the excess of the copper. 23. The method according to claim 20, wherein prior to step (i), a low dielectric layer is formed on the substrate, and the multiple layers are formed on top of the low dielectric layer. 24. The method according to claim 20, wherein steps (i) through (iv) are repeated at least once. 25. The method according to claim 1, wherein the oxidizing gas is CO2. 26. The method according to claim 1, wherein the oxidizing gas flows at a flow rate of 1000 sccm to 2500 sccm. 27. The method according to claim 1, wherein the deposition gas flows constantly at a flow rate of 100 sccm to 1000 sccm. 28. The method according to claim 1, wherein NH3 is added to the deposition gas and the inert gas when forming the silicon carbide film.
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