Integration of titanium and titanium nitride layers
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IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/4763
H01L-021/02
H01L-021/44
출원번호
US-0151699
(2005-06-13)
발명자
/ 주소
Yang,Michael X.
Itoh,Toshio
Xi,Ming
출원인 / 주소
Applied Materials, Inc.
대리인 / 주소
Patterson &
인용정보
피인용 횟수 :
27인용 특허 :
211
초록▼
Embodiments of the invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds such as a titanium precursor and a reductant, providing one or more cycles of a second set
Embodiments of the invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds such as a titanium precursor and a reductant, providing one or more cycles of a second set of compounds such as the titanium precursor and a silicon precursor and providing one or more cycles of a third set of compounds such as the titanium precursor and a nitrogen precursor. Another embodiment includes depositing a titanium layer on a substrate, depositing a passivation layer containing titanium silicide, titanium silicon nitride or combinations thereof over the titanium layer and subsequently depositing a titanium nitride layer over the passivation layer. Still another embodiment comprises depositing a titanium layer on a substrate, soaking the titanium layer with a silicon precursor and subsequently depositing a titanium nitride layer thereon.
대표청구항▼
The invention claimed is: 1. A method for forming a metal-containing material on a substrate, comprising: forming a metallic layer on a substrate by a first plasma-enhanced cyclical vapor deposition process; exposing the metallic layer to a soak process; and forming a metal nitride layer on the met
The invention claimed is: 1. A method for forming a metal-containing material on a substrate, comprising: forming a metallic layer on a substrate by a first plasma-enhanced cyclical vapor deposition process; exposing the metallic layer to a soak process; and forming a metal nitride layer on the metallic layer by a second plasma-enhanced cyclical vapor deposition process. 2. The method of claim 1, wherein the first plasma-enhanced vapor deposition process comprises exposinq the substrate to a compound selected from the group consisting of hydrogen, silane, borane, diborane, derivatives thereof, and combinations thereof. 3. The method of claim 2, wherein the metallic layer comprises titanium. 4. The method of claim 2, wherein the second plasma-enhanced cyclic vapor deposition process comprises exposing the substrate to a compound selected from the group consisting of nitrogen, hydrogen, a nitrogen/hydrogen mixture, ammonia, hydrazine, hydrazine compounds, derivatives thereof, and combinations thereof. 5. The method of claim 4, wherein the metal nitride layer comprises titanium. 6. The method of claim 1, wherein a conductive material is deposited on the nitride layer and the conductive material comprises a metal selected from the group consisting of tungsten, copper, aluminum, alloys thereof, and combinations thereof. 7. The method of claim 1, wherein the soak process comprises exposing the metallic layer to hydrogen and a silicon-containing compound selected from the group consisting of silane, disilane, chlorosilane, dichlorosilane, trichlorosilane, tetrachlorosilane, hexachlorodisilane, derivatives thereof, and combinations thereof. 8. A method for forming a metal-containing material on a substrate, comprising: forming a metallic layer on a substrate by a plasma-enhanced cyclical vapor deposition process; exposing the metallic layer to a soak process; and forming a metal nitride layer on the metallic layer by a second vapor deposition process. 9. The method of claim 8, wherein the plasma-enhanced cyclical vapor deposition process comprises exposing the substrate to a compound selected from the group consisting of hydrogen, silane, borane, diborane, derivatives thereof, and combinations thereof. 10. The method of claim 9, wherein the metallic layer comprises titanium. 11. The method of claim 8, wherein the second vapor deposition process is selected from the group consisting of chemical vapor deposition, cyclical deposition, physical vapor deposition, and combinations thereof. 12. The method of claim 11, wherein the second vapor deposition process comprises exposing the substrate to a plasma. 13. The method of claim 12, wherein the. plasma comprises a compound selected from the group consisting of nitrogen, hydrogen, a nitrogen/hydrogen mixture, ammonia, hydrazine, hydrazine compounds, derivatives thereof, and combinations thereof. 14. The method of claim 13, wherein the metal nitride layer comprises titanium. 15. The method of cLaim 8, wherein a conductive material deposited on the nitride layer and the conductive material is comprises a metal selected from the group consisting of tungsten, copper, aluminum, alloys thereof, and combinations thereof. 16. The method of claim 8, wherein the soak process comprises exposing the metallic layer to hydrogen and a silicon-containing compound selected from the group consisting of silane, disilane, chlorosilane, dichlorosilane, trichlorosilane, tetrachlorosilane, hexachlorodisilane, derivatives thereof, and combinations thereof. 17. The method of claim 8, wherein the soak process comprises exposing the metallic layer to hydrogen and a silicon-containing compound for a time period within a range from about 5 seconds to about 60 seconds. 18. A method for forming a metal-containing material on a substrate, comprising: forming a metallic layer on a substrate by a cyclical vapor deposition process; exposing the metallic layer to a soak process; and forming a metal nitride layer on the metallic layer by a plasma-enhanced vapor deposition process. 19. The method of claim 18, wherein the plasma-enhanced vapor deposition process is selected from the group consisting of chemical vapor deposition, cyclical deposition, and combinations thereof. 20. The method of claim 19, wherein the plasma-enhanced vapor deposition process comprises exposing the substrate to a compound selected from the group consisting of nitrogen, hydrogen, a nitrogen/hydrogen mixture, ammonia, hydrazine, hydrazine compounds, derivatives thereof, and combinations thereof. 21. The method of claim 20, wherein the metal nitride layer comprises titanium. 22. The method of claim 18 wherein the cyclical vapor deposition process comprises exposing the substrate to a plasma. 23. The method of claim 22, wherein the plasma comprises a compound selected from the group consisting of hydrogen, silane, borane, diborane, derivatives thereof, and combinations thereof. 24. The method of claim 23, wherein the metallic layer comprises titanium. 25. The method of claim 18, wherein a conductive material is deposited on the nitride layer and the conductive material comprises a metal selected from the group consisting of tungsten, copper, aluminum, alloys thereof, and combinations thereof. 26. The method of claim 18, wherein the soak process comprises exposing the metallic layer to hydrogen and a silicon-containing compound selected from the group consisting of silane, disilane, chlorosilane, dichlorosilane, trichlorosilane, tetrachlorosilane, hexachlorodisilane, derivatives thereof, and combinations thereof. 27. A method for forming a metal-containing material on a substrate, comprising: forming a titanium-containing layer on a substrate by a plasma-enhanced cyclical vapor deposition process; exposing the substrate to a silicon-containing compound during a soak process, wherein the silicon-containing compound is selected from the group consisting of silane, disilane, chlorosilane, dichlorosilane, trichlorosilane, tetrachlorosilane, hexachlorodisilane, derivatives thereof, and combinations thereof; and depositing a conductive material on the substrate by a second vapor deposition process. 28. The method of claim 27, wherein the conductive material is selected from the group consisting of tungsten, copper, aluminum, alloys thereof, and combinations thereof. 29. The method of claim 28, wherein the silicon-containing compound is silane and the conductive material contains tungsten. 30. The method of claim 27, wherein the second vapor deposition process is a plasma-assisted cyclical deposition process. 31. A method for forming a titanium-containing material on a substrate, comprising: forming a titanium-containing layer on a substrate by a first vapor deposition process; exposing the titanium-containing layer to hydrogen during a soak process to form a pretreated layer thereon; and forming a nitride layer on the pretreated layer by a second vapor deposition process. 32. The method of claim 31, wherein the first vapor deposition process and the second vapor deposition process are independently selected from the group consisting of chemical vapor deposition, cyclical deposition, physical vapor deposition, and combinations thereof. 33. The method of claim 32, wherein the first vapor deposition process comprises exposing the substrate to a plasma. 34. The method of claim 33, wherein the plasma comprises a compound selected from the group consisting of hydrogen, silane, borane, diborane, derivatives thereof, and combinations thereof. 35. The method of claim 32, wherein the second vapor deposition process comprises exposing the substrate to a plasma. 36. The method of claim 35, wherein the plasma comprises a compound selected from the group consisting of nitrogen, hydrogen, a nitrogen/hydrogen mixture, ammonia, hydrazine, hydrazine compounds, derivatives thereof, and combinations thereof. 37. The method of claim 31, wherein the soak process further comprises exposing the titanium-containing layer to a silicon-containing compound selected from the group consisting of silane, disilane, chlorosilane, dichlorosilane, trichlorosilane, tetrachlorosilane, hexachlorodisilane, derivatives thereof, and combinations thereof. 38. The method of claim 37, wherein a silicide layer is formed during the soak process, wherein the silicide layer comprises a material selected from the group consisting of a titanium silicide material, a titanium suicide nitride material, derivatives thereof, and combinations thereof. 39. The method of claim 38, wherein the titanium-containing layer comprises a metallic titanium material and the nitride layer comprises a titanium nitride material. 40. The method of claim 31, wherein a conductive material is deposited on the nitride layer and the conductive material comprises a metal selected from the group consisting of tungsten, copper, aluminum, alloys thereof, and combinations thereof.
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이 특허에 인용된 특허 (211)
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