초록 ▼

A transparent conductive material in which the desired resistivity is achieved with a high carrier concentration is provided for use in an OLED. In one embodiment, the transparent conductive material comprises indium-tin-oxide. (ITO) with a high carrier concentration of at least at least 7횞1020 cm-3

A transparent conductive material in which the desired resistivity is achieved with a high carrier concentration is provided for use in an OLED. In one embodiment, the transparent conductive material comprises indium-tin-oxide. (ITO) with a high carrier concentration of at least at least 7횞1020 cm-3. The high carrier concentration improved the performance of the OLED device.

대표청구항 ▼

What is claimed is: 1. An organic LED (OLED) device comprising: a substrate with a device region; and an OLED stack in the device region, wherein the OLED stack comprises: a transparent conductive layer serving as a first electrode, the transparent conductive layer comprising indium-tin-oxide with

What is claimed is: 1. An organic LED (OLED) device comprising: a substrate with a device region; and an OLED stack in the device region, wherein the OLED stack comprises: a transparent conductive layer serving as a first electrode, the transparent conductive layer comprising indium-tin-oxide with a resistivity of less than or equal to about 4횞10-4 Ωcm achieved with a carrier concentration of at least about 7횞1020 cm-3, a conductive layer serving as a second electrode, and at least one organic functional layer separating the first and second electrodes; wherein the transparent conductive layer comprises a work function closely matching an ionization potential of the at least one organic functional layer. 2. The device of claim 1 wherein the transparent conductive layer comprises an optical transmittance in the visible wavelength range >85%. 3. The device of claim 1 wherein a surface of the transparent conductive layer comprises an RMS roughness <2 nm. 4. The device of claim 1 wherein the transparent conductive layer comprises an optical transmittance in the visible wavelength range >85% and an RMS surface roughness <2 nm. 5. The device of claim 1 wherein the carrier concentration is about 7횞1020 cm-3 to about 9횞1020 cm -3. 6. The device of claim 5 wherein the transparent conductive layer comprises an optical transmittance in the visible wavelength range >85%. 7. The device of claim 5 wherein a surface of the transparent conductive layer comprises an RMS roughness <2 nm. 8. The device of claim 5 wherein the transparent conductive layer comprises an optical transmittance in the visible wavelength range <85% and an RMS surface roughness <2 nm. 9. The device of claim 1, wherein the transparent conductive layer is deposited on the substrate in an argon-hydrogen atmosphere. 10. A method for fabricating an organic LED (OLED) device comprising: providing a substrate; depositing a transparent conductive layer on the substrate, wherein the transparent conductive layer serves as a first electrode and comprises indium-tin-oxide with a resistivity of less than or equal to about 4횞10-4 Ωcm achieved with a carrier concentration of at least about 7횞1020 cm-3; and processing the substrate to form an OLED stack, comprising depositing a functional organic layer over the first electrode; wherein the transparent conductive layer comprises a work function closely matching an ionization potential of the organic functional layer; and depositing a conductive layer over the functional organic layer to serve as a second electrode. 11. The method of claim 10 wherein depositing the transparent conductive layer comprises sputtering the transparent conductive layer on the substrate. 12. The method of claim 10 wherein the transparent conductive layer comprises an optical transmittance in the visible wavelength range >85%. 13. The method of claim 10 wherein a surface of the transparent conductive layer comprises as RMS roughness <2 nm. 14. The method of claim 10 wherein the transparent conductive layer comprises an optical transmittance in the visible wavelength range >85% and an RMS surface roughness <2 nm. 15. The method of claim 10 wherein the carrier concentration is about 7횞1020 cm-3 to about 9횞1020 cm-3. 16. The method of claim 10, wherein depositing a transparent conductive layer includes depositing the transparent conductive layer in an argon-hydrogen atmosphere. 17. An organic light emitting device (OLED), comprising: a substrate with a device region; and an OLED stack in the device region, the OLED stack comprising: a transparent conductive layer as a first electrode serving as an anode, the transparent conductive layer having a resistivity of less than or equal to about 4횞10-4 Ωcm achieved with a hole concentration of at least about 7횞1020 cm-3; a conductive layer serves as a second electrode; and at least one organic functional layer separating the first and second electrodes. wherein the transparent conductive layer comprises a work function closely matching an ionization potential of the at least one organic functional layer. 18. The device of claim 17, wherein the transparent conductive layer comprises an optical transmittance in the visible wavelength range >85%. 19. The device of claim 17 wherein a surface of the transparent conductive layer comprises a RMS roughness <2 nm. 20. The device of claim 17 wherein the transparent conductive layer comprises an optical transmittance in the visible wavelength range >85% and an RMS surface roughness <2 nm. 21. The device of claim 17 wherein the carrier concentration is 7횞1020 cm-3 to about 9횞1020 cm-3. 22. The device of claim 17 wherein the transparent conductive layer comprises a material selected from the group consisting of indium-zinc-oxide, zinc-oxide and tin-oxide. 23. The device of claim 17 wherein the transparent conductive layer comprises indium-tin-oxide. 24. The device of claim 17, wherein the transparent conductive layer is deposited on the substrate in an argon-hydrogen atmosphere. 25. The method of claim 10, wherein processing the substrate to form an OLED stack further comprises: patterning the transparent conductive layer to form the first electrode; patterning the conductive layer over the functional organic layer to form the second electrode, wherein the functional organic layer between the patterned first and second electrodes forms the OLED stack; and mounting a cap on the substrate to encapsulate the OLED stack.