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A method for producing a tantalum sputtering component includes a minimum of three stages each of which include a deformation step followed by an inert atmosphere high-temperature anneal. Temperatures of each of the anneal steps can be different from one another. A tantalum sputtering component inc

A method for producing a tantalum sputtering component includes a minimum of three stages each of which include a deformation step followed by an inert atmosphere high-temperature anneal. Temperatures of each of the anneal steps can be different from one another. A tantalum sputtering component includes a mean grain size of less than about 100 microns and a uniform texture throughout the component thickness. The uniform texture can be predominately {111}< uvw>.

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What is claimed is: 1. A method for producing a tantalum sputtering component comprising a minimum of three stages each of which comprise a deformation step followed by an inert atmosphere high-temperature anneal, the anneal occurring at a temperature of from 2200째 F. to 2800째 F. in at least the fi

What is claimed is: 1. A method for producing a tantalum sputtering component comprising a minimum of three stages each of which comprise a deformation step followed by an inert atmosphere high-temperature anneal, the anneal occurring at a temperature of from 2200째 F. to 2800째 F. in at least the first two of the minimum of three stages and the tantalum sputtering component exhibiting a mean grain size of less than about 100 microns and a uniform texture that is predominately {111}<uvw> throughout a thickness of the component. 2. A method for producing a tantalum sputtering component, comprising: providing an initial tantalum-comprising mass; first deforming the initial tantalum-comprising mass to form a first deformed mass, the first deforming comprising reducing a thickness of the mass; annealing the first deformed mass at a first temperature of at least about 1500째 F. to about 2800째 F.; second deforming the tantalum-comprising mass to form a second deformed mass, the second deforming comprising reducing a thickness of the first deformed mass; annealing the second deformed mass at a second temperature of at least about 1500째 F.; third deforming the second deformed tantalum-comprising mass to form a third deformed mass, the third deforming comprising reducing a thickness of the second deformed mass; and annealing the third deformed mass at a third temperature of at least about 1500째 F., the first, second and third temperatures being different from one another and the sputtering component exhibiting a uniform texture that is predominately {111}<uvw> throughout a thickness of the component. 3. The method of claim 2 wherein the first deforming comprises reducing the thickness of the mass by at least about 40%. 4. The method of claim 2 wherein the second deforming comprises reducing the thickness of the first deformed mass by at least about 35%. 5. The method of claim 2 wherein the third deforming comprises reducing a thickness of the second deformed mass by at least about 60%. 6. The method of claim 2 wherein the initial tantalum-comprising mass is in the form of an ingot and wherein the third deformed mass has a thickness corresponding to a plate thickness of the tantalum sputtering target formed from the ingot. 7. A method of claim 2 wherein said deformation of said tantalum ingot is carried out by forging, rolling or extrusion. 8. The method of claim 2 wherein the sputtering component comprises a mean grain size of less than about 100 microns. 9. The method of claim 2 wherein at least one of the annealing the first, second, and third deformed masses comprises vacuum annealing. 10. A method for producing a tantalum sputtering component, comprising: providing a tantalum-comprising mass having a first thickness; reducing the thickness of the tantalum-comprising mass from the first thickness to a second thickness; and after reducing the thickness of the tantalum-comprising mass to the second thickness, first annealing the mass at a first temperature of at least about 2200째 F. to 2400째 F.; reducing the thickness of the tantalum-comprising mass from the second thickness to a third thickness; and after reducing the thickness of the tantalum-comprising mass to the third thickness, second annealing the mass at a second temperature of from 2200째 F. to 2400째 F.; and reducing the thickness of the tantalum-comprising mass from the third thickness to a fourth thickness; and after reducing the thickness of the tantalum-comprising mass to the fourth thickness, third annealing the mass at a third temperature of at least about 1500째 F., the tantalum sputtering component exhibiting a mean grain size of less than about 100 microns and uniform texture that is predominately {111}< uvw> throughout a thickness of the component. 11. The method of claim 10 wherein the mass is exposed to a first ambient during the first annealing, is exposed to a second ambient during the second annealing, and is exposed to a third ambient during the third annealing; the first, second and third ambients consisting of components which are inert relative to reaction with the tantalum-comprising mass. 12. The method of claim 10 wherein at least one of the first, second, and third annealing comprises vacuum annealing. 13. A method for producing a tantalum sputtering target comprising a minimum of three stages that each include a deformation step followed by an inert atmosphere high-temperature anneal, the high-temperature anneal occurring at different temperatures of from about 2200째 F. to about 2800째 F. in at least the first two of the minimum of three stages and the tantalum sputtering component exhibiting a uniform texture that is predominately {111}<uvw> throughout a thickness of the component. 14. The method of claim 13 wherein the high-temperature anneal occurs at a temperature of about 2200째 F. to 2400째 F. in at least the first two of the minimum of three stages. 15. A method of producing a tantalum sputtering target comprising the steps of: (a) providing an initial tantalum-comprising mass; (b) first deforming said initial tantalum-comprising mass to form a first deformed mass, said first deforming comprising reducing a thickness of said mass; (c) annealing said first deformed mass at first temperature of from about 2200째 F. to about 2400째 F.; (d) second deforming the tantalum-comprising mass to form a second deformed mass, said second deforming comprising reducing a thickness of said first deformed mass; (e) annealing said second deformed mass at a second temperature of a least about 2200째 F.; (f) third deforming the second deformed tantalum-comprising mass to form a third deformed mass, said third deforming comprising reducing a thickness of the second deformed mass; and (g) annealing the third deformed mass at a third temperature of at least about 1500째F., the first, second and third temperatures being significantly different from one another. 16. The method of claim 15 wherein the temperature of said first and second stage anneal is from about 2200째 F. to 2400째 F. 17. A process of forming a thin film tantalum-containing capacitor comprising the steps of: (a) producing a tantalum sputtering target using a minimum of three stages that each include a deformation step followed by an inert atmosphere of high-temperature anneal, the high temperature anneal occurring at a temperature of from about 2200째 F. to about 2800째 F. in at least the first two of the minimum of three stages, the tantalum sputtering target exhibiting a mean grain size of less than 100 microns and a uniform texture that is predominately {111}<uvw> throughout a thickness of the component; (a) sputtering said produced tantalum sputtering target to form a thin film; and (b) anodizing said sputtered thin film to form a said thin film tantalum-containing capacitor. 18. A capacitor forming method comprising: producing a tantalum sputtering component using a minimum of three stages that include a deformation step followed by an inert atmosphere high-temperature anneal, the high-temperature anneal occurring at a temperature of from 2200째 F. to 2400째 F. in at least the first two of the minimum of three stages, the tantalum sputtering component exhibiting a mean grain size of less than about 100 microns and a uniform texture that is predominately {111}<uvw> throughout a thickness of the component; forming a first capacitor electrode; sputtering the tantalum sputtering component to form a tantalum layer over the capacitor electrode; anodizing the sputtered tantalum to form a capacitor dielectric; and forming a second capacitor electrode over the capacitor dielectric. 19. The method of claim 18 wherein the high-temperature anneal occurs at a temperature of at least about 1500째 F. in a stage subsequent to the first two of the minimum of three stages. 20. The method of claim 18 wherein the inert atmosphere anneal comprises a vacuum anneal. 21. A capacitor forming comprising: forming a tantalum sputtering component comprising a mean grain size of less than about 50 microns and a uniform texture that is predominately {111}<uvw> throughout a thickness of the component, the forming using a minimum of three stages that each include a deformation step followed by an inert atmosphere high-temperature anneal, the high temperature anneal at a temperature of from 2200째 F. to 2400째 F. in at least the first two of the minimum of three stages; forming a first capacitor electrode; collimated sputtering of the tantalum sputtering component to form a tantalum layer over the capacitor electrode; forming sputtering dielectric form the sputtered tantalum; and forming a second capacitor electrode over the capacitor dielectric.