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Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01N-021/64
  • G01N-021/88
출원번호 US-0861738 (2004-06-04)
발명자 / 주소
  • Eyolfson,Mark
  • Hochhalter,Elton J.
  • Phillips,Joe Lee
  • Johnson,David R.
  • Frank,Peter S.
출원인 / 주소
  • Micron Technology, Inc.
대리인 / 주소
    TraskBritt, PC
인용정보 피인용 횟수 : 1  인용 특허 : 31

초록

A method and apparatus for detection of a particular material, such as photo-resist material, on a sample surface are disclosed. A narrow beam of light is projected onto the sample surface and the fluoresced and/or reflected light intensity at a particular wavelength band is measured by a light dete

대표청구항

What is claimed is: 1. An apparatus for detecting a material on a semiconductor substrate, comprising: a chamber configured for receiving a semiconductor substrate; a movable stage for positioning the semiconductor substrate within the chamber; a first port for allowing a beam of high energy ligh

이 특허에 인용된 특허 (31)

  1. Nishimura Yasunori (Nara JPX), Apparatus and method for detecting residual organic compounds.
  2. Ueda Tetsuya (Moriguchi JPX) Yano Kohsaku (Osaka JPX), Apparatus for dry etching.
  3. Harju Raimo,FIX ; Vaisala Mikko,FIX, Apparatus for imaging biochemical samples on substrates.
  4. Davis Cecil J. (Greenville TX) Spencer John E. (Plano TX) Johnson Randall E. (Carrollton TX) Jucha Rhett B. (Celeste TX) Brown Frederick W. (Tarrant TX) Kohan Stanford P. (Garland TX), Automated single slice cassette load lock plasma reactor.
  5. Haneda Satoshi (Tokyo JPX) Fukuchi Masakazu (Tokyo JPX), Control apparatus and method for image-forming system.
  6. Kadomura Shingo (Kanagawa JPX), Dry etching method.
  7. Takatsu Norihiko (Tokyo JPX) Suwa Kyoichi (Yokohama JPX) Nakamura Shinichi (Kawaguchi JPX) Hosokawa Hiroaki (Sagamihara JPX) Hirukawa Shigeru (Kashiwa JPX), Exposure condition measurement method.
  8. Romano David J., Fluorescence dot area meter.
  9. Tanimoto Akikazu (Yokohama JPX), Inspecting method for mask for producing semiconductor device.
  10. Divens William G. (Mountain View CA) Cole William B. (Mountain View CA) Leitner Michael W. (Sunnyvale CA) Blau David A. (Los Altos CA), Laser-based wafer measuring system.
  11. Hamilton Jeffrey L. (Livermore CA), Method and apparatus for detecting defective semiconductor wafers during fabrication thereof.
  12. Hara Yasuhiko (Yokohama JPX) Karasaki Koichi (Hadano JPX) Ujiie Noriaki (Hadano JPX), Method and apparatus for detecting wiring patterns.
  13. Ghanayem Steve G. (Sunnyvale CA), Method and apparatus for etchback endpoint detection.
  14. Fujimura Shuzo (Tokyo JPX), Method and apparatus for microwave plasma anisotropic dry etching.
  15. Steinhardt Heinz (Wien DEX) Mathuni Josef (Munich DEX), Method for generating excited neutral particles for etching and deposition processes in semiconductor technology with a.
  16. Katzir Abraham (Afeka NJ ILX) Kolodner Paul R. (Maplewood NJ), Method for monitoring etching of resists by monitoring the flouresence of the unetched material.
  17. Thakur Randhir P. S. (Boise ID) Sandhu Gurtej S. (Boise ID) Martin Annette L. (Boise ID), Method for repeatable temperature measurement using surface reflectivity.
  18. Degenkolb Eugene O. (Basking Ridge NJ) Griffiths James E. (New Providence NJ) Mogab Cyril J. (New Providence NJ), Method for the optical monitoring of plasma discharge processing operations.
  19. Suguro Kyoichi (Yokohama JPX) Okano Haruo (Tokyo JPX), Method of manufacturing semiconductor device.
  20. Nishimatsu Shigeru (Kokubunji JPX) Suzuki Keizo (Hachioji JPX) Ninomiya Ken (Tokyo JPX) Kanomata Ichiro (Fuchu JPX) Okudaira Sadayuki (Kokubunji JPX) Saida Hiroji (Kokubunji JPX), Microwave plasma etching.
  21. Yano Hiroyuki (Wappingers Falls NY) Okumura Katsuya (Poughkeepsie NY), Pad condition and polishing rate monitor using fluorescence.
  22. Keller John H. (Poughkeepsie NY) Selwyn Gary S. (Hopewell Junction NY) Singh Jyothi (Hopewell Junction NY), Plasma amplified photoelectron process endpoint detection apparatus.
  23. Schoenborn Philippe (San Jose CA), Plasma etching process control.
  24. Kadomura Shingo (Kanagawa JPX), Plasma processing apparatus and method for carrying out plasma processing by using such plasma processing apparatus.
  25. Donnelly Vincent M. (Berkeley Heights NJ) Flamm Daniel L. (Chatham Township ; Morris County NJ), Plasma-assisted etch process with endpoint detection.
  26. Takahashi Tsutomu (Yokohama JPX) Tohyama Keiichi (Kawasaki JPX) Takahashi Tamami (Yamato JPX), Polishing apparatus having endpoint detection device.
  27. Arleo Paul (Menlo Park CA) Henri Jon (San Jose CA) Hills Graham (Los Gatos CA) Wong Jerry (Fremont CA) Wu Robert (Pleasanton CA), Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting spu.
  28. Mihara Satoru (Yokohama JPX) Nozaki Kouji (Kawasaki JPX) Mihara Yukari (Yokohama JPX), Process for forming resist mask pattern.
  29. Sachdev Harbans S. (Hopewell Junction NY) Forster John C. (Poughkeepsie NY) Linehan Leo L. (Walden NY) MacDonald Scott A. (San Jose CA) Muller K. Paul L. (Wappingers Falls NY) Mlynko Walter E. (Colch, Residue free vertical pattern transfer with top surface imaging resists.
  30. DellaGuardia Ronald A. (Poughkeepsie NY) Mauer ; IV John L. (South Kent CT) Seeger David E. (Congers NY), Resist development endpoint detection for X-ray lithography.
  31. Kohno Michio (Tokyo JPX), Surface condition inspection method and apparatus using image transfer.

이 특허를 인용한 특허 (1)

  1. Manian, Bala S., Method of fluorescent measurement of samples, and devices therefrom.
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