초록 ▼

Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites develop due to the deposition of silicon from silicon-containing molecules in the surrounding reactor atmosphere. Thereafter

Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites develop due to the deposition of silicon from silicon-containing molecules in the surrounding reactor atmosphere. Thereafter, the surface temperature is gradually reduced so that silicon that deposits on the needle-like dendrites causes the dendrites to grow and assume a generally flared shape.

대표청구항 ▼

The invention claimed is: 1. A method for producing a polycrystalline silicon comprising: heating a surface of a substrate; exposing the heated surface to an atmosphere that contains at least one silicon-containing compound under conditions that cause a silicon-containing compound in the atmosphere

The invention claimed is: 1. A method for producing a polycrystalline silicon comprising: heating a surface of a substrate; exposing the heated surface to an atmosphere that contains at least one silicon-containing compound under conditions that cause a silicon-containing compound in the atmosphere to decompose and deposit tapered dendrites of silicon on the surface; and gradually reducing the surface temperature of the tapered dendrites while exposing the tapered dendrites to an atmosphere that contains at least one silicon-containing compound such that silicon deposits on the surfaces of the tapered dendrites and forms multiple larger dendrites. 2. The method of claim 1 wherein the heating the surface of the substrate and the exposing the hcatcd surface to the atmosphere are conducted such tat larger dendrites are distributed over substantially the entire heated surface of the substrate. 3. The method of claim 1 wherein the gradually reducing of the surface temperature is at a rate such that the resulting larger dendrites have surfaces that flare outwardly from the substrate. 4. The method of claim 3 wherein the gradually reducing the surface temperature while exposing the tapered dendrites to the atmosphere is conducted such that at least some of the larger dendrites are generally teardrop-shaped. 5. The method of claim 1 wherein the gradually reducing the surface temperature while exposing the tapered dendrites to the atmosphere is conducted such that at least some of the larger dendrites have a stem portion that is no greater than aboat 8 nina in diameter at its narrowest point. 6. The method of claim 1 wherein The atmosphere comprises a silicon-containing compound selected from the group consisting of silane gases, halosilane gases, and mixtures thereof. 7. The method of claim 6 wherein the atmosphere comprises a silicon-containing compound selected from the group consisting of silane (SiH4), disilane (Si2H6), trisilane (Si 3H8), dichiorosilane (SiH2Cl2), trichiorosilane (SiHCl3), silicon tetrachioride (SiCl4), dibromosilane (SiH2Br2), tribromosilane (SiHBr 3), silicon tetrabromide (SiBr4) dilodosilane (SiHl 2I2), triiodosilane (SiHI3, silicon tetraiodidc (SiI4), and mixtures thereof. 8. The method of claim 7 wherein the atmosphere comprises silane. 9. The method of claim 7 wherein the atmosphere comprises trichlorosilane. 10. The method of claim 7 wherein the atmosphere comprises trisilane. 11. The method of claim 1 wherein: the silicon-containing compound is silane (SiH4); and the exposing of The heated surfhce to an atmosphere that contains at least one silicon-containing compound under conditions that cause a silicon-containing compound in the atmosphere to decompose and deposit tapered dendrites comprises maintaining the surface in a temperature range such that the temperature is at least 875째C. and is below the melting point of silicon during at least a portion of the time when the tapered dendrites are being deposited. 12. The method of claim 11 wherein the decomposing of the silane to form tapered dendrites is at a temperature of at least 9750째C. during at least a portion of the time when the tapered dendrites are being deposited. 13. The method of claim 1 further comprising breaking the larger dendrites oft of the substrate. 14. The method of claim 1 wherein: silane (SiH4) is the silicon-containing compound; the decomposing of the silane to form tapered dendrites is conducted in a surface temperature range such that the temperature is at least 875째C. and is below the melting point of silicon during at least a portion of the time when the tapered dendrites are being formed; and the decomposing of the silane to cause the tapered dendrites to grow into larger dendrites is at a temperature below the melting point of silicon. 15. The method of claim 14 wherein the decomposing of the silane to form tapered dendrites is at a temperature of at least 975째C. during at least a portion of the time when the tapered dendrites are being formed. 16. A method for producing polycrystalline silicon comprising: providing an elongated polycrystalline silicon core rod; exposing the surface of the core rod to an atmosphere that contains at least one silicon-containing compound while maintaining the surface temperature of the core rod below the melting point of silicon and sufficiently high that a silicon-containing compound in the atmosphere pyrolytically decomposes and deposits silicon on the surface to provide a rod encrusted with tapered dendrite formations; and gradually reducing the surface temperature of the rod encrusted with tapered dendrite formations while continuing to expose the tapered dendrite formations to an atmosphere that contains at least one silicon-containing compound such that silicon deposits on the tapered dendrite formations and forms a rod encrusted with multiple larger silicon dendrites. 17. The method of claim 16 wherein the gradually reducing of the surface temperature of the rod encrusted with tapered dendrite formations while continuing to expose the tapered dendrite fonnations to an atmosphere that contains at least one silicon-containing compound is conducted such that larger dendrites are distributed over substantially the entire heated surface of the core rod. 18. The method of claim 16 wherein: the silicon-containing compound is silane (SiH4); and the decomposing of die silane to form tapered dendrites is at a surface temperature of at least 875째C. during at least a portion of the time when the tapered dendrites are being formed. 19. The method of claim 18 wherein the decomposing of the silane to form tapered dendrites is at a surfice temperature of at least 975째C. during at least a portion of the time when the tapered dendrites are being formed. 20. The method of claim 16 wherein the gradually reducing of the surface temperature of the rod encrusted with tapered dendrite formations while continuing to expose the tapered dendrite formations to an atmosphere that contains at least one silicon-containing compound is conducted at conditions such that at least some of the larger dendrites are generally teardrop-shaped. 21. The method of claim 16 further comprising forming the core rod by depositing a growth layer of polycrystalline silicon on a starter filament. 22. The method of claim 16 wherein the core rod consists of a filament and the tapered dendrite formations are formed directly on the filament. 23. The method of claim 16 wherein die atmosphere comprises a silicon-containing compound selected from the group consisting of silan and mixtures thereof. 24. The method of claim 23 wherein the atmosphere comprises a silicon-containing compound selected from the group consisting of silane (SiH4),disilane (Si2H6),trisilane (Si3 H8), dichiorosilane (SiH2Ci2), trichiorosilane (SiHCl3), silicon tetrachioride (SiCl4), dibrornosilane (SiH2Br2), tribromosilane (SiHBr3), silicon tetrabromide (SiBr4) diiodosilane (SiH2I2), trijodosilane (SiHl3), silicon tetrajodide (SiI4), and mixtures thereof. 25. A method for producing polycrystalline silicon comprising: providing an elongated polycrystalline silicon filament; depositing a generally cylindrical layer of polycrystalline silicon on the filament to fonn a core rod; exposing the suitce of the core rod to an atmosphere that comprises silane (SiH4) while maintaining the rod surface a temperature in a range such that the temperature is at least 875째C. and is below the melting point of silicon, during which silane in the gas pyrolytically decomposes and deposits silicon on the surface in tapered dendrite formations and produces a rod encrusted with tapered dendrites; and gradually reducing the surface temperature of the rod encrusted with tapered dendrites while exposing the tapered dendrites to an atmosphere that contains silane, the surface temperature being reduced at a rate such that silicon deposits on the tapered dendrite formations and forms multiple larger silicon dendrites distributed over substantially the entire heated surface of the rod encrusted with dendrites, at least some of which larger dendrites have a surface that flares outwardly from the core rod; and separating the larger dendrites from the core rod. 26. The method of claim 25 wherein the exposing of the surface of the core rod to an atmosphere that comprises silane is at a rod surface temperature of at least 975째C. during at least a portion of the time when the tapered dendrites are being deposited. 27. A method for forming single crystal silicon ingots comprising: growing multiple polycrystalline silicon dendrites on a substrate; separating the dendrites from the substratc; charging the crucible of a crystal-growing furnace with dendrites separated from the substrate; melting the dendrites in the crucible; and pulling a single crystal ingot from molten silicon in the crucible. 28. The method of claim 27 wherein: the substrate is a core rod ofpolycrystailine silicon; and the method further comprises breaking the core rod into chunks and charging the crucible with chunks of the core rod along with the separated dendrites.